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    D0272 Search Results

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    D0272 Price and Stock

    Kyocera AVX Components BQ014D0272J

    CAP FILM 2700PF 5% 63VDC RADIAL
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    Kyocera AVX Components BF014D0272J

    CAP FILM 2700PF 5% 63VDC RADIAL
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    Werbel Microwave WMRD02-7.2-S

    POWER DIV 2 WAY 0HZ-7.2GHZ SMA
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    Kyocera AVX Components CB017D0272JBA

    CAP FILM
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    DigiKey CB017D0272JBA Reel 7,000
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    Newark CB017D0272JBA Reel 3,500
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    Richardson RFPD CB017D0272JBA 3,500
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    Avnet Abacus CB017D0272JBA 17 Weeks 3,500
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    TE Connectivity 55CD0272-28-6

    55CD0272-28-6
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    DigiKey 55CD0272-28-6 Bulk 9,843
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    Avnet Americas 55CD0272-28-6 Reel 18 Weeks, 3 Days 9,843
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    TTI 55CD0272-28-6 Spool 9,843
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    Interstate Connecting Components 55CD0272-28-6
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    D0272 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AD8512

    Abstract: ad8512arz AD8510ARM AD8513 AD8510
    Text: Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers AD8510/AD8512/AD8513 –IN 2 AD8510 8 NC NULL 1 7 V+ –IN 2 TOP VIEW 6 OUT Not to Scale V– 4 5 NULL NC V+ TOP VIEW 6 OUT (Not to Scale) V– 4 5 NULL +IN 3 7


    Original
    AD8510/AD8512/AD8513 AD8510 AD8512 14-Lead AD8512 ad8512arz AD8510ARM AD8513 AD8510 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 MHz to 2.7 GHz RF Gain Block AD8353 Data Sheet FUNCTIONAL BLOCK DIAGRAM Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 9 dBm Input/output internally matched to 50 Ω Temperature and power supply stable Noise figure: 5.3 dB


    Original
    AD8353 AD8353 11-2013-B AD8353ACPZ-REEL7 AD8353-EVALZ D02721-0-12/13 PDF

    V956ME03

    Abstract: No abstract text available
    Text: PLL Frequency Synthesizer ADF4106 Data Sheet FEATURES GENERAL DESCRIPTION 6.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply VP allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65


    Original
    ADF4106 ADF4106 16-Lead 20-Lead RU-16 V956ME03 PDF

    CNY17 Harris

    Abstract: CNY17 III
    Text: 3875081 G E S O L ID STATE 01E 19822 Optoelectronic Specifications _ T HARRIS SEMICOND SECTOR 37E D I - m - S 4305271 D0272Û4 4 * H A S Photon Coupled Isolator CN Y17 Ga As Infrared Emitting Diode & npn Silicon Photo - Transistor T h e G E Solid S tate CN Y17 consists o f a gallium arsenide infrared


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    D0272 92CS-429S1 CNY17 Harris CNY17 III PDF

    AmPAL16R8

    Abstract: 16H8 AmPAL16R4 16R4Q 16R8 8103613RX 16L8 16R4 16R6 electrical bra
    Text: ADV MICRO PLA/PLE/ARRAY sT Î dË | . 0257SSL, D0272M2 T-46-13-47 ' AmPAL16R8 Fam ily 20-Pin IMOX"* Programmable Array Logic PAL Elements Distinctive Characteristics ! i r • AMD's superior IMOX technology - Guarantees tp o “ 1S ns Max. " B " Versions


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    02S7SEb 00S75M2T T-46-13-47 20-Pin Ice13 0ES752L. ks000010 025752t, AmPAL16R8 16H8 AmPAL16R4 16R4Q 16R8 8103613RX 16L8 16R4 16R6 electrical bra PDF

    Untitled

    Abstract: No abstract text available
    Text: 38 75 081 G E S O L I D ST A T E 0 1E 1 9 8 14 Optoelectronic Specifications_ HARRIS SEfllCOND SECTOR Light Detector 37E D • 430E271 D02727b S^IBHAS Planar Silicon Photo-Darlington Amplifier BPW38 T h e G E S o lid S ta te B PW 38 is a supersensitive N P N P la n a r S ilicon


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    430E271 D02727b BPW38 S-429S PDF

    Untitled

    Abstract: No abstract text available
    Text: H A RR IS S E M I C O N D S E CT OR 37E D * 4 30 2 27 1 D0272D4 I HAS 2 Optoelectronic Specifications_ Photon Coupled Isolator H11K1, H11K2 G a As Infrared E m itting D iode & T w o N P N S ilicon P h o to -D a rlin g to n Amplifiers The OE Solid State H 11K series consists of a gallium arsenide, infrared emitting


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    D0272D4 H11K1, H11K2 92CS-42662 92CS-429S1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID 0 1 E 19746 STATE D Optoelectronic S pecifications_ HARRIS SEtllCOND SECTOR 37E D I 4 30 2 2 7 1 D0272GÔ T • HAS Photon Coupled Isolator H11L1,H11L2, H11L3 Ga As Infrared E m ittin g D iode & M icroprocessor C om patible S c h m itt Trigger


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    D0272GÃ H11L1 H11L2, H11L3 S-429S PDF

    Untitled

    Abstract: No abstract text available
    Text: sì GEC PLESSEY OCTOBER 1996 S E M I C O N D U C T O R S D S 4287 - 2.3 ACE9020 RECEIVER AND TRANSMITTER INTERFACE Supersedes DS4287 - 1.0 in Communications 1C Handbook. HB4235 - 1.0, February 1996 ACE9020 is a VHFoscillator, up-converter and prescaler.


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    ACE9020 DS4287 HB4235 ACE9020 ACE9010 ACE9030. PDF

    HM514170CLJ8

    Abstract: HM514170CLJ-8 HM514170CJ7
    Text: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM 51 S 4170C are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 p.m CMOS process


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    HM514170C HM51S4170C 144-word 16-bit 4170C 16-bit. 4170C HM514170CLJ8 HM514170CLJ-8 HM514170CJ7 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers


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    HM5118160BI 1048576-word 16-bit ADE-203-580A 5118160B 576-w 16-bit. ns/70 ns/80 PDF

    LF 3.3vOLT

    Abstract: No abstract text available
    Text: PRELIMINARY IDT72V255 IDT72V265 3.3 VOLT CMOS SUPERSYN C FIFO 8,192x18,16,384x18 Integrated Device Technology, Inc. • Output enable puts data outputs into high impedance • High-performance submicron CMOS technology • Industrial temperature range -40°C to +85°C is avail­


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    192x18 384x18 IDT72V255 IDT72V265 18-bit IDT72V255) IDT72V265) 492-M PSC-4036 LF 3.3vOLT PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 125175/B International S Rectifier ST223S SERIES Stud Version INVERTER GRADE THYRISTORS Features • All diffused design ■ Center amplifying gate ■ Guaranteed high dv/dt ■ Guaranteed high di/dt ■ High surge current capability ■ Low thermal impedance


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    125175/B ST223S T223S D-488 4A55452 00272b3 D-489 PDF

    RBS 2202

    Abstract: BBS 2202 intel 80188 Lucent SLC 96 CI 4048 counter ami c21 SESCO MOTOROLA LSC SR12 SR14
    Text: Preliminary Data Sheet June 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7230A Primary Access Framer/Controller Features • Framing formats — DS1 extended superframe ESF — DS1 superframe (SF): D4; SLC^-96; T1DM DDS; T 1DM DDS with FDL access


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    T7230A RBS 2202 BBS 2202 intel 80188 Lucent SLC 96 CI 4048 counter ami c21 SESCO MOTOROLA LSC SR12 SR14 PDF

    Z1132

    Abstract: No abstract text available
    Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended


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    HM5118165B 1048576-word 16-bit ADE-203-000 576-word 16-bit. ns/70 ns/80 Z1132 PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N « E IS0103 1 Low-Cost, Internally Powered ISOLATION AMPLIFIER FEATURES APPLICATIONS • SIGNAL AND POWER IN ONE DOUBLE-WIDE 0.6" SIDE-BRAZED PACKAGE • 5600Vpk TEST VOLTAGE • MULTICHANNEL ISOLATED DATA ACQUISITION • ISOLATED 4-20mA LOOP RECEIVER AND


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    IS0103 5600Vpk 4-20mA 1500Vrms 20kHz 17313bS ZZ231 PDF

    Untitled

    Abstract: No abstract text available
    Text: G F T PI FS^FY 5Ü X J SEPTEMBER 1996 t PRELIMINARY INFORMATION S E M I C O N D U C T O R S D.S. 44101.5 SL6679 DIRECT CONVERSION FSK DATA RECEIVER The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450MHz. The device integrates


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    SL6679 SL6679 450MHz. 37bfl55E 575m3 PDF

    Lucent dw025acl-m

    Abstract: DW025ABK-M DW025
    Text: Data Sheet June 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations DW025 Triple Output-Series Power Modules: 36 Vdc to 75 Vdc Input; 25 W Options • Short pins: 2.79 mm ± 0.25 mm 0.110 in.±0.010 in. ■ Negative logic remote on/off


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    DW025 MHSTxxx45 MHSLxxx45 005002b Lucent dw025acl-m DW025ABK-M PDF

    Untitled

    Abstract: No abstract text available
    Text: i i N AMER PHILIPS/DISCRETE b'lE D • bbS3^31 Q05723D 851 H A P X BT138F SERIES J V FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking


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    Q05723D BT138F OT-186 BT138Fâ D2733 PDF

    AmPAL23S8-30

    Abstract: No abstract text available
    Text: A DV MICRO PLA/PLE/ARRAYS , Tt. D e | 02S7S2t, 0 0 2 7 2 2 7 1 T -V 4 -/3 -V 7 AmPAL23S8 20-Pin IMOX PAL Device-Based Sequencer Distinctive C haracteristics • • • • • 14 Registers - 4 Output Logic Macrocells OLMs - 4 Output Registers - 6 Buried State Registers (BSRs)


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    02S7S2t, 20-Pin 20-pin 33-MHz extemal/40-MHz AmPAL23S8-30 PDF

    TXXXXXXXXXX

    Abstract: No abstract text available
    Text: CMOS SUPERSYNC FIFO 16,384 x 9, 32,768 x 9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • The IDT72261/72271 are monolithic, CMOS, high capac­ ity, high speed, low power first-in, first-out FIFO memories


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    IDT72261 IDT72271 IDT72261) IDT72271) 492-M IDT77105 25Mb/s 64-PIN 2S771 TXXXXXXXXXX PDF

    triac bt139

    Abstract: 800H BT139 T0220AB RJ28
    Text: N AMER PHILIPS/DISCRETE b^E D • bbSSTSl 0D272fc>5 070 ■ APX Preliminaryspec Triac BT139 series H GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 16 A triacs intended for use in applications


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    bb53131 0D27Bb5 BT139 T0220AB BT139- T0220AB; T0220 triac bt139 800H RJ28 PDF

    memory cats

    Abstract: HM5118160B HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ-8 HM5118160BLJ-6 HM5118160BLJ-7 HM5118160BLJ-8
    Text: HM5118160B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-476 Z Preliminary Rev. 0.0 Dec. 6, 1995 Description The Hitachi HM5118160B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160B offers Fast Page


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    HM5118160B 1048576-word 16-bit ADE-203-476 576-word 16-bit. ns/70 ns/80 memory cats HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ-8 HM5118160BLJ-6 HM5118160BLJ-7 HM5118160BLJ-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI M EM OR Y CARD F LA S H M E M O R Y CAR DS M F 8 4 M 1 -G 4 E A T X X 8/76-bit Data Bus Flash M e m o ry C ard Connector Type Two-piece 68-pin 7 D E S C R IP TIO N The M F 84M 1 - G4E A T X X is a flash m em o ry card • T T L interface level ■ P ro g ra m /e ra se operation by softw are com m and


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    8/76-bit 68-pin PDF