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D03S60C Abstract: PG-TO220-2-2 IDT03S60C JESD22 Text: IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior Product Summary V DC 600 V Qc 5 nC IF 3 A • High surge current capability	Original	PDF	IDT03S60C PG-TO220-2-2 D03S60C D03S60C PG-TO220-2-2 IDT03S60C JESD22
IDV03S60C Abstract: Infineon power diffusion process Schottky diode TO220 JESD22 Text: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Data Sheet Rev. 2.1, 2010-02-16 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV03S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the	Original	PDF	IDV03S60C IDVxxS60C O220FullPAK IDV03S60C Infineon power diffusion process Schottky diode TO220 JESD22
Untitled Abstract: No abstract text available Text: IDT03S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 5 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 3 A • Temperature independent switching behavior I F @ T C < 100°C	Original	PDF	IDT03S60C PG-TO220-2-2 20mA2)
Untitled Abstract: No abstract text available Text: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Data Sheet Rev. 2.1, 2010-02-16 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV03S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the	Original	PDF	IDV03S60C IDVxxS60C O220FullPAK