D03SS Search Results

D03SS Price and Stock

Filter by Manufacturer


Molex DND03SS-M020 Mic 5P M/Mp 2M 90D Ss Drop \|Molex DND03SS-M020
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	DND03SS-M020	Bulk			4	1 $57.14 10 $53.85 100 $44.66 1000 $43.68 10000 $43.68	Buy Now
Molex DND03SS-M010 Mic 5P M/Mp 1M 90D Ss Drop \|Molex DND03SS-M010
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	DND03SS-M010	Bulk			4	1 $54.06 10 $48.18 100 $41.42 1000 $39.96 10000 $39.96	Buy Now
Molex DND03SS-M050 Mic 5P M/Mp 5M 90D Ss Drop \|Molex DND03SS-M050
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	DND03SS-M050	Bulk			4	1 $82.13 10 $77.41 100 $64.2 1000 $62.78 10000 $62.78	Buy Now

D03SS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BSR56 Abstract: No abstract text available Text: • bbS3T31 D03SS33 311 H A P X N AMER PHILIPS/DISCRETE BSR56 BSR57 BSR58 b7E D y v N-CHANNEL FETS Symmetrical silicon n-channel depletion type ju nctio n field-effect transistors in a plastic m icrom iniature envelope intended fo r application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.	OCR Scan	bbS3T31 D03SS33 BSR56 BSR57 BSR58 Drain-R56 BSR56; BSR57; BSR56	PDF
NB111 Abstract: NB121 NB211E LB 122 NPN U6501 NB212E Text: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i\|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- • CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding	OCR Scan	bS0113G NB121 100mA 400mV to-92 fcj501130 NB021EV NB211YY NR001E NB111 NB211E LB 122 NPN U6501 NB212E	PDF
qml-38535 Abstract: GDFP1-F48 Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A 18 19 REV SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD M ICROCIRCUIT DRAW ING THIS DRAWING IS AVAILABLE	OCR Scan	16-bit 10047GÃ qml-38535 GDFP1-F48	PDF
SOT-90B Abstract: No abstract text available Text: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio	OCR Scan	SL5500 SL5501 SL5511 bbS3T31 00355b? SOT-90B	PDF
Untitled Abstract: No abstract text available Text: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC	OCR Scan	H11B1 H11B2 H11B3 0110b bbS3T31 D03SSD4	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-BIT MICROCOMPUTER DESCRIPTION • D-A c o n v e rte -bit X 1 channels The 3819 group is a 8 -bit m icrocom puter based on the 740 fam ily • Z e r o cross detection in p u t. 1 channel	OCR Scan	16-channel QQ35540	PDF
40khz ultrasonic transmitter Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k Text: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~\| package and lead coding features • 20 Volt/800 mA Amp rating	OCR Scan	SD113G Volt/800 NB111EH/J NA01EG/J NR001E 380mW NR001E 40khz ultrasonic transmitter 40KHZ ULTRASONIC NA01 nb111eh NB021EY toko k	PDF
40khz ultrasonic transmitter Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY Text: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~\| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §	OCR Scan	SD113G 800mA Volt/800 NB111EH/J NA01EG/J NR001E NA01EG/J 380mW 40khz ultrasonic transmitter 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NB021EY	PDF
NA72 Abstract: NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220 Text: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h - NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C D ISCRETE 35561 National Semiconductor T ' 2 ? - r < z a. z < Z NA 71 (NPN) NA 7 2 (PNP) ^ AmP com plem entary power tra n sisto rs IT ! packages and lead coding	OCR Scan	tSD113D O-126 O-220 100mA 200mA NB323Y NA72W NA71W 100pF. NB022EY NA72 NB313Y NB022EY NB111EY NB121EY NB123EY NB323Y NR001E transistor A05 2TO220	PDF
NB111 Abstract: npn general purpose amplifier E28C nb121 Text: ~ 2ä NATL SEHICOND {DISCRETE} 650 1130 a. Z a CO CM NATL S E M IC O N D , D E \|b s a ii3 Q a a B ssT a 28C 35593 D IS C R E T E National Semiconductor T- r> CM CM NB121,122,123(PNP) 100mA general purpose transistors CM features rCÛ z V» z CL z (TI package and lead coding	OCR Scan	NB121 100mA 400mV tS0113Q NB021EY NB211YY NR001E NA41U NA42U NB111 npn general purpose amplifier E28C	PDF
m7 smd diodes Abstract: TCA605G SIEMENS thyristor transistor smd cr smd transistor m7 2.tn SMD siemens EM 235 Text: 47E D SIEMENS • B235b05 QDB55b3 £ S IS IE6 SIEMENS AKTIEN6 ESE LLSCHAF 7 = ' i 5 ‘' 0 1C for Inductive Two-Wire Proximity Switches with Short-Circuit Protection TCA 605 Bipolar IC Preliminary Data • • • • • • 5 Operates from 1 V supply voltage upwards	OCR Scan	B235b05 QDB55b3 Q67000-A8292 P-DSO-16 fl23SbD5 0Q3SS77 T-65-05 fl235b05 m7 smd diodes TCA605G SIEMENS thyristor transistor smd cr smd transistor m7 2.tn SMD siemens EM 235	PDF
capacitor discharge ignition Abstract: NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32 Text: NATL SENICOND -CDISCRETE> NATL "äfl SEM ICOND, DF\|bSD1130 DISC R ETE 28C 3 5 5 7 7 V/WX National MM Semiconductor J 3 - / / NA61 (NPN) 4 .5 A m p c o m p le m e n ta ry p o w e r tr a n s is to r s NA62(PNP) feature s CO < z IT ! packages and lead coding	OCR Scan	003SS77 O-126 O-220 IO11F NB022EY NB123EY NR001E NB113EY NB111EY NB121EY capacitor discharge ignition NB313Y "capacitor discharge ignition" NA61W NA62 Ignition Transformer NB022EY NB123EY NB111 NB32	PDF
zilog 1866 Abstract: XTAL NTK Z86E04 in 18 pins NTK oscillator 10 MHz 4 pins Z86CCP00ZEM Z86E04 Z86E08 ntk 8mhz 4 pin oscillator ntk 2MHz Text: PRELIMINARY C ustom er P rcxjjrem en iSpecification < $ 2 iL C E Z 8 6 E 0 4 /E 0 8 S L 1 866 CMOS Z8 O T P M icro co n tro i a e r FEATURES Part Number ROM Kbytes RAM* (Bytes) Speed (MHz) Z86E08 Z86E04 2 1 125 125 12 8 * General-Purpose • ■ Program Options:	OCR Scan	Z86E08 Z86E04 18-Pin Z86E04/E08 SL1866 zilog 1866 XTAL NTK Z86E04 in 18 pins NTK oscillator 10 MHz 4 pins Z86CCP00ZEM ntk 8mhz 4 pin oscillator ntk 2MHz	PDF
KM48V2104B Abstract: No abstract text available Text: KM48V2004BS CMOS DRAM ELECTR O NICS 2 M x 8 Bit C M O S Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power	OCR Scan	KM48V2004BS 16Mx4, 512Kx8) KM48V2104B	PDF

audio power amplifier 500 watt Abstract: 3a npn to126 transistor Text: ~E0 NATL SEMICOND {DISCRETE} 6501130 a z a c i h- NATL SEMICOND, DE~J t.5 □ 113 0 0G3SSfll fl 28C 35561 D ISCRETE T'2?'// National Semiconductor - r < z a. z < Z NA71 (NPN) NA7 2 (PNP) ^ AmP com plem entary pow er tra n sisto rs IT! packages and lead coding	OCR Scan	O-126 O-220 100mA 200mA O-126 O-220 D03SS NB022EY NB123EY NR001E audio power amplifier 500 watt 3a npn to126 transistor	PDF
Untitled Abstract: No abstract text available Text: KM48C2000BS CMOS D R A M ELECTRONICS 2M x 8 Bit C M O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily o1 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	KM48C2000BS 16Mx4, 512Kx8) GG3S251	PDF
SOT-90B Abstract: No abstract text available Text: Product specification Philips Sem iconductors OF4114 Optocoupler FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with TTL integrated circuits • Fast switching • High degree of AC and DC insulation 3120 V (RMS and	OCR Scan	OF4114 E90700 OF4114 OT90B 0110b 0Q3S535 bb53R31 3553b SOT-90B	PDF
2N2222 transistor Abstract: k thermocouple amplification circuit diagram ZB50 220V to 12V transformer trim pot 200k Amplifier type K thermocouple k type themocouple 1000VA 2B50 2B50A Text: ANALOG DEVICES INC SIE ]> MÊ OfllbflOO 0 0 3 S S Ü 3 S âl • ANA A N A LO G Isolated, Thelinocoupïe D E V IC E S _ Signal Conditioner □ FEATU RES Accepts J , K , T , E , R , S or B Thermocouple Types Internally Provided Cold Junction Compensation	OCR Scan	160dB 2B50B) 2N2222 transistor k thermocouple amplification circuit diagram ZB50 220V to 12V transformer trim pot 200k Amplifier type K thermocouple k type themocouple 1000VA 2B50 2B50A	PDF
bc2378 Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633 Text: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi	OCR Scan	tS0113D J15511 SD1130 bc2378 box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633	PDF

Privacy Settings

D03SS Search Results

D03SS Price and Stock

Molex DND03SS-M020

Molex DND03SS-M010

Molex DND03SS-M050

D03SS Datasheets Context Search

BSR56

NB111

qml-38535

SOT-90B

Untitled

Untitled

40khz ultrasonic transmitter

40khz ultrasonic transmitter

NA72

NB111

m7 smd diodes

capacitor discharge ignition

zilog 1866

KM48V2104B

audio power amplifier 500 watt

Untitled

SOT-90B

2N2222 transistor

bc2378