D1411A
Abstract: 2SB1018A 2SD1411A
Text: D1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)
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2SD1411A
2SB1018A
D1411A
2SB1018A
2SD1411A
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D1411A
Abstract: 552a 2SB1018A 2SD1411A
Text: D1411A 東芝トランジスタ シリコンNPN三重拡散形 D1411A 通 信 工 業 用 ○ 大電流スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = 7 A • コレクタ飽和電圧が低い。
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2SD1411A
2SB1018A
2-10R1A
D1411A
552a
2SB1018A
2SD1411A
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D1411A
Abstract: 2SD1411A 2SB1018A D1411
Text: D1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Maximum Ratings (Tc = 25°C)
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Original
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2SD1411A
2SB1018A
2-10R1A
D1411A
2SD1411A
2SB1018A
D1411
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D1411A
Abstract: No abstract text available
Text: D1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)
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Original
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2SD1411A
2SB1018A
2-10R1A
D1411A
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PDF
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D1411A
Abstract: 2SB1018A 2SD1411A
Text: D1411A 東芝トランジスタ シリコンNPN三重拡散形 D1411A 通 信 工 業 用 ○ 大電流スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = 7 A • コレクタ飽和電圧が低い。
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Original
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2SD1411A
2SB1018A
2-10R1A
20070701-JA
D1411A
2SB1018A
2SD1411A
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PDF
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D1411A
Abstract: 2SB1018A 2SD1411A
Text: D1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type D1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Ta = 25°C)
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Original
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2SD1411A
2SB1018A
D1411A
2SB1018A
2SD1411A
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PDF
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