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    D1760 NPN TRANSISTOR Search Results

    D1760 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    D1760 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR d1760

    Abstract: 2SD1760F5
    Text: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760*Q , where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A


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    2SD1760F5 SC-63) D1760 2SB1184 TRANSISTOR d1760 2SD1760F5 PDF

    d1760

    Abstract: 821 transistor
    Text: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760^Q, where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A


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    2SD1760F5 SC-63) D1760 2SB1184 2SD1760F5 821 transistor PDF

    d1760

    Abstract: TRANSISTOR d1760 d1760 NPN Transistor C848J3 BTB1184J3 BTD1760J3 BTD1760
    Text: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC RCESAT Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6 50V 3A 125mΩ typ. Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A


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    BTD1760J3 C848J3 BTB1184J3 O-252 UL94V-0 d1760 TRANSISTOR d1760 d1760 NPN Transistor C848J3 BTB1184J3 BTD1760J3 BTD1760 PDF

    d1760

    Abstract: TRANSISTOR d1760 BTB1184J3 BTD1760J3 d1760 NPN Transistor BTD1760
    Text: CYStech Electronics Corp. Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2005.10.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics


    Original
    C848J3 BTD1760J3 BTB1184J3 O-252 UL94V-0 d1760 TRANSISTOR d1760 BTB1184J3 BTD1760J3 d1760 NPN Transistor BTD1760 PDF

    TRANSISTOR d1760

    Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type


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    2SD1760/2SD1864/2SD1762 2SB1184/2SB1243 /2SB1185. 2SD1760 2SD1864 65Max. SC-63 2SD1762 2sd1760 2sd1864 TRANSISTOR d1760 TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1762 transistor 1002 d1762 f g PDF