Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    D2695 TRANSISTOR Search Results

    D2695 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    D2695 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD2695

    Abstract: D2695
    Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original
    2SD2695 2SD2695 D2695 PDF

    2SD2695

    Abstract: D2695 D2695 TRANSISTOR
    Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original
    2SD2695 2SD2695 D2695 D2695 TRANSISTOR PDF

    D2695 TRANSISTOR

    Abstract: D2695 2SD2695
    Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original
    2SD2695 D2695 TRANSISTOR D2695 2SD2695 PDF

    D2695 TRANSISTOR

    Abstract: D2695 2SD2695
    Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original
    2SD2695 D2695 TRANSISTOR D2695 2SD2695 PDF

    D2695

    Abstract: D2695 TRANSISTOR 2SD2695
    Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original
    2SD2695 D2695 D2695 TRANSISTOR 2SD2695 PDF