LA 2910
Abstract: D2 Pack dsa001
Text: SVR1086-2.85M, Z, D2, & D3 thru SVR1086-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR
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SVR1086-2
SVR1086-12M,
12Volts
LM117
SVR1085
150oC
SVR1086
O-254
LA 2910
D2 Pack
dsa001
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PDF
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DSA-001
Abstract: dsa001 D2 Pack lm117 3.3V LM117 SVR1085-12M voltage regulator, 0 to 48V, 0 to 15 amps DS-A001
Text: SVR1085-3.3M, Z, D2, & D3 thru SVR1085-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR
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Original
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SVR1085-3
SVR1085-12M,
12Volts
SVR1085
O-254
O-254Z
DSA-001
dsa001
D2 Pack
lm117 3.3V
LM117
SVR1085-12M
voltage regulator, 0 to 48V, 0 to 15 amps
DS-A001
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PDF
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Untitled
Abstract: No abstract text available
Text: High Voltage Latch-Up Proof, Quad SPST Switches ADG5412/ADG5413 FEATURES FUNCTIONAL BLOCK DIAGRAMS S1 D1 S2 S2 IN2 IN2 D2 D2 ADG5412 ADG5413 S3 S3 IN3 IN3 D3 D3 Relay replacement Automatic test equipment Data acquisition Instrumentation Avionics Audio and video switching
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ADG5412/ADG5413
ADG5412
ADG5413
ADG5412/ADG5413
ADG5412
ADG5413
ADG5412;
16-Lead
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PDF
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power transistor 1802
Abstract: transistor 010C ARF1510
Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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ARF1510
40MHz
ARF1510
power transistor 1802
transistor 010C
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ARF1511
Abstract: 225MH
Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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ARF1511
40MHz
ARF1511
125lb
225MH
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power transistor 1802
Abstract: ARF1511 750w planar transistor C 4927 rf power generator ARF 250v 1500w
Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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Original
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ARF1511
40MHz
ARF1511
power transistor 1802
750w planar transistor
C 4927
rf power generator
ARF 250v 1500w
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PDF
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Untitled
Abstract: No abstract text available
Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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Original
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ARF1510
40MHz
ARF1510
125lb
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PDF
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Untitled
Abstract: No abstract text available
Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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Original
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ARF1510
40MHz
ARF1510
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PDF
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Untitled
Abstract: No abstract text available
Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40
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Original
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ARF1511
40MHz
ARF1511
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AMPLIFIER 1500w
Abstract: Simple test MOSFET Procedures Transistor S1D ARF1510 750w planar transistor AN 1510
Text: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1510
40MHz
ARF1510
125lb
AMPLIFIER 1500w
Simple test MOSFET Procedures
Transistor S1D
750w planar transistor
AN 1510
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PDF
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AMPLIFIER 1500w
Abstract: ARF1510 15VCrss
Text: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
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Original
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ARF1510
40MHz
ARF1510
125lb
AMPLIFIER 1500w
15VCrss
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PDF
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rf power generator
Abstract: ARF1511 750w planar transistor ARF 250v 1500w
Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
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Original
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ARF1511
40MHz
ARF1511
125lb
rf power generator
750w planar transistor
ARF 250v 1500w
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PDF
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C 4927
Abstract: AMPLIFIER 1500w Simple test MOSFET Procedures ARF1511
Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
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Original
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ARF1511
40MHz
ARF1511
125lb
C 4927
AMPLIFIER 1500w
Simple test MOSFET Procedures
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PDF
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BCW32
Abstract: BCW31 BCW33
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS
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OT-23
BCW31
BCW32
BCW33
BCW31
BCW32
BCW33
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PDF
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IRFMJ044
Abstract: No abstract text available
Text: PD-97258 POWER MOSFET SURFACE MOUNT D3 PAK IRFMJ044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMJ044 RDS(on) ID 0.04 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-97258
IRFMJ044
IRFMJ044
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-97258 POWER MOSFET SURFACE MOUNT D3 PAK IRFMJ044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMJ044 RDS(on) ID 0.04 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-97258
IRFMJ044
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PDF
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Untitled
Abstract: No abstract text available
Text: mß/EREX KD221275A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DlISl D3 flinQtOfl Transistor Module 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use
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OCR Scan
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KD221275A7
Amperes/1200
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PDF
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HN1V01H
Abstract: No abstract text available
Text: HN1V01H TO SH IBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. “ “0.3 4.5 - 0.2 MAXIMUM RATINGS (Ta = 25°C (D1# D2, D3, D4) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
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OCR Scan
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HN1V01H
HN1V01H
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PDF
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Q62702-S510
Abstract: No abstract text available
Text: SIPMOS Kleinsignaltransistoren SIPMOS®Small-Signal Transistors Bedrahtete Bauformen Leaded Types Typ Type ^DS max. V ^ 3S (thj V (max) mA Iff [» Ä D3 {on) max N-Kanal-Anreicherungstypen . Aot mW Bestellnummer Ordering Code Gehäuse Package 1! Bild Figure
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OCR Scan
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BSS98
Q62702-S464
Q62702-S603
Q67000-S061
Q67000-S062
Q62702-S489
Q67000-S065
Q62702-S458
Q62702-S623
Q62702-S510
Q62702-S510
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PDF
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BCW32R
Abstract: BCW33R BCW31 BCW31R BCW32 BCW33 DS44
Text: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - D5 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE SYMBOL PARAMETER UNIT Collector-Base Voltage V CBO 32 V Collector-Emltter Voltage lc = 2.0mA
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OCR Scan
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-BCW31
BCW32
BCW33
BCW31R
BCW32R
BCW33R
BCW31
10fiA,
10/JA,
DS44
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PDF
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BFP96
Abstract: BFP96 P6 BFQ32C OA74 Philips MBB UBB824 1462, TRANSISTOR MB8627 transistor 1548
Text: Philips Semiconductors bbSB'ÎBl D D3 14Û 5 1ÔS M A P X Product specification NFN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE ]> PINNING NPN transistor in hermetically sealed sub-miniature SOT173 and SOT173X micro-stripline envelopes.
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OCR Scan
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BFP96
OT173
OT173X
BFQ32C.
BFP96
BFP96 P6
BFQ32C
OA74
Philips MBB
UBB824
1462, TRANSISTOR
MB8627
transistor 1548
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PDF
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301 marking code PNP transistor
Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
Text: UMD3N IMD3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP
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OCR Scan
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SC-74)
DTA114EKA)
DTC114EKA)
SC-70)
SC-59)
301 marking code PNP transistor
Marking Y1 ROHM
D3A transistor
marking D3N
marking code D3 SC-74
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PDF
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Untitled
Abstract: No abstract text available
Text: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1.02
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OCR Scan
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BCW31
BCW32
BCW33
BCW31
Q0QQ752
BCW32
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PDF
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Untitled
Abstract: No abstract text available
Text: BCW31 BCW32 BCW33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS PARTMARKING DETAILS:BCW31 - D1 BCW32 - D2 BCW33 - D3 BCW31R - D4 BCW32R - 05 BCW33R - D6 ABSOLUTE MAXIMUM RATINGS VALUE UNIT v CB0 32 V V ECO 32 V PARAMETER SYM BO L C ollector-B ase V oltage
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OCR Scan
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BCW31
BCW32
BCW33
BCW31R
BCW32R
BCW33R
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PDF
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