Untitled
Abstract: No abstract text available
Text: 1Meg x 4 Monolithic DRAM m o l a t e MDM41000-80/10/12 Issue 3.3 : October 1993 S e m ic o n d u c to r 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns 5 Volt Supply ± 10% 1024 Refresh Cycles 16 ms CAS before RAS Refresh
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MDM41000-80/10/12
b3S3371
00053m
MDM41000WMB-10
MIL-STD-883,
MIL-STD-883
b3S337T
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Untitled
Abstract: No abstract text available
Text: 1992 1M x 1 Monolithic CMOS DRAM molate M D M 1 1 0 0 1 - T /V /V X /G /J Issue 2.0 : September 1992 Mosaic Semiconductor PRELIMINARY Inc. 1,048,576 x 1 CMOS High Speed Dynamic RAM Pin Definition Package Type: T .V '.'G ' Features Row Access Times of 80/100/120 ns
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Untitled
Abstract: No abstract text available
Text: 4Meg x 1 M onolithic DRAM molaic MDM14001-80/10/12 Issue 1.1 : April 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP, 20 & 24 Pin VIL
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MDM14001-80/10/12
MIL-STD-883D
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Untitled
Abstract: No abstract text available
Text: MOSAIC SEMICONDUCTOR INC S3E D • b35337T D001B3fl 525 « M O C 256K x 8 CMOS SRAM molaic M S M 8 2 5 6 -4 5 /5 5 /7 0 Issue 2.1 :August 1992 M osaic PRELIMINARY Sem iconductor Inc. r 262,144 x 8 CMOS High Speed Static RAM A Pin Definition Package Type ‘S \V
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b35337T
D001B3fl
700mW
20jiW
MIL-STD-883
MSM8256-4
MSM8256SLMB-45
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Untitled
Abstract: No abstract text available
Text: noi aie 256K x 4 Monolithic VideoRAM M V M 4 2 5 6 K /T /V -1 0/12/15 Issue 3.1 : Novem ber 1991 osaic smiconduclor r 262,144 x 4 CMOS High Speed Video Dynamic RAM Features SC SI/OO SI/01 DT/OE 1/00 1/01 WE NC RAS A8 A6 A5 A4 Vcc RAM Access Time of 100,120,150 ns
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MIL-STD-883B
SI/01
SI/03
MVM4256VM
MIL-883
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Untitled
Abstract: No abstract text available
Text: 1M x molate 1 DRAM MDM11000-80/10/12/15 Issue 3.1 : October 1991 M osaic S em iconductor Inc. Pin Definitions Package Type: T,V 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Sit WE RAS Row Access Times of 80,100/120/150 ns 5 Voft Supply ± 10% 512 Refresh Cycles 8 ms
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MDM11000-80/10/12/15
MIL-STD-883C
MIL-883
cA92i
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imo3
Abstract: No abstract text available
Text: RPR 1 9 19« 128K X 8 SRAM m oìaic MSM8129-025/35 issue 1.5 : April 1993 ADVANCE PRODUCT INFORMATION ^— Pin Definition S e m ic o n d u c to r 1 2 3 4 5 NC A16 A14 A12 A7 A6 AS A4 A3 A2 A1 AO 00 01 02 GND 131,072 X 8 CMOS High Speed Static RAM Features
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MSM8129-025/35
MIL-STD-883
32pin0
imo3
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104 m5e
Abstract: No abstract text available
Text: MOSAIC SEMICONDUCTOR INC *4SE D m b B S B B ? 11 GOQOfl^ 1 M O C 32K X 8 EEPROM MEM832V/J-20/25 Issue 3.0: S ep tem b er 1991 Inc. Pin Definitions 32,768 x 8 CMOS EEPROM A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Features Fast Access Times of 200/250 ns.
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MEM832V/J-20/25
MIL-STD-883C
MEM832VMB-20
104 m5e
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a810c
Abstract: sc 1091 "Video Dynamic RAM" military VM42
Text: 256K x 4 Monolithic VideoRAM n o i a i e MVM4256K/T/V-10/12/15 Issue 3.1 : November 1991 itniconduclor 262,144 x 4 CMOS High Speed Video Dynamic RAM Pin Definition Package Types: 'K '.T.'V Features 22 NC RAS A8 A6 A5 A4 21 20 19 18 17 16 Vcc 15 A7 DT/OE 1/00
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MVM4256K/T/V-10/12/15
MIL-STD-883B
SI/01
SI/03
SI/02
MIL-883
a810c
sc 1091
"Video Dynamic RAM" military
VM42
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FT152
Abstract: ft152 circuit TVPA
Text: ÜUU 1 ' *4 ê moîaïc 512 K X 8 FLASH EEPROM MFM8512G/J/S/V/W-12/15/20 Issue 1.0 : September 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r r Features Access Times of 120/150/200 ns Operating Power 150 mW typ Read Low Power Standby TTL levels 55MW (max. @ 70°C)
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512KX
110MW
MIL-STD-883
A10JU2
MFM8512G/J/S/V/W-12/15/20
600mil
100milVIL
FT152
ft152 circuit
TVPA
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sxvx
Abstract: No abstract text available
Text: 256K x 8 CMOS SRAM molate MSM4512X-25/35/45/55 Issue 1.0 : February 1993 ADVANCE PRODUCT INFORMATION Sem iconductor inc. f 262,144 x 8 CMOS High Speed Static RAM Features A Pin Definition Package Type - ’SX'.VX’ Very Fast Access Times of 25/35/45/55 ns
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MSM4512X-25/35/45/55
1705mW
MIL-STD-883
sxvx
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Untitled
Abstract: No abstract text available
Text: 128K X 8 SRAM molate MSM8128X-85/10/12 Issue 3.0 : October 1992 S e m ic o n d u c to r f Pin Definition NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO 01 D2 GND 131,072 x 8 CMOS High Speed Static RAM Features Fast Access Times of 85/100/120 ns JEDEC Standard 32 pin OIL footprint
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MSM8128X-85/10/12
MIL-STD-883
32pin0
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Untitled
Abstract: No abstract text available
Text: 4Meg x 1 Monolithic DRAM molaic MDM14000-80/10/12 Issue 3.2 : September 1993 S e m ic o n d u c to r Inc. 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP,20 & 24 Pin VIL 5 Volt S u p p ly! 10% 1024 Refresh Cycles 16 ms
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MDM14000-80/10/12
MIL-STD-883
A0-A10
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Untitled
Abstract: No abstract text available
Text: 1Meg x 4 M onolithic DRAM molate M D M 410 0 0 -8 0 /1 0 /1 2 Issue 3.1 : Decem ber 1992 M o sa ic S e m ic o n d u c to r Inc. r 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns 5 Volt Supply ±10% 1024 Refresh Cycles 16 ms
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MIL-STD-883
MDM41000-8Q/10/12
MDM41000WMB-10
MIL-STD-883,
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30H22
Abstract: No abstract text available
Text: 512KX 8 FLASH EEPROM molate MFM8512G/J/S/V/W-12/15/20 Issue 1.0 : September 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r S’ Pin Definition 524,288 x 8 CMOS FLASH EEPROM Memory Features Access Times of 120/150/200 ns Operating Power 150 mW typ Read
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512KX
MFM8512G/J/S/V/W-12/15/20
110MW
MIL-STD-883
50rcial
600mil
100mil
30H22
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Untitled
Abstract: No abstract text available
Text: Tm '• - • * 1Meg x 4 Monolithic DRAM molaic M D M 4 1 0 0 0 -8 0 /1 0 /1 2 Issue 3.2 : June 1993 Semiconductor Pin Definition Package Type: 'K .'V .'G '.'W .'J' - 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns 5 Volt Supply ±10%
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Untitled
Abstract: No abstract text available
Text: OEC 7 1992 32K X 8 EEPROM molate M EM 832V/J-90/12/15 Issue 2.0 : November 1992 Semiconductor Pirt Definitions 32,768 x 8 High Speed CMOS EEPROM A14 A12 A7 A6 AS A4 A3 A2 A1 A0 DO D1 D2 GND Features Very Fast Access Times of 90/120/150 ns. VIL and JLCC packages available.
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32V/J-90/12/15
MIL-STD-883C
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MSM8256
Abstract: No abstract text available
Text: molate 256K x 8 CMOS SRAM M S M 8 2 5 6 -2 5 /3 5 /4 5 /5 5 Issue 2.2 : February 1993 S e m ic o n d u c to r P R E L IM IN A R Y inc. r 262,144 x 8 CMOS High Speed Static RAM Pin Definition Package Type - •S’.'V Features Very Fast Access Times of 25/35/45/55 ns
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1705mW
MIL-STD-883
ego0cA92i
MSM8256
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zj23
Abstract: No abstract text available
Text: 512Kx 8 CMOS SHAM molate MSM8512-70/85/10 Issue 1.1 : November 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 524,288 X 8 CMOS High Speed Static RAM Pin Definition Features Very Fast Access Tunes of 70/85/100 ns. JEDEC Standard 32 pin Footprint.
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512Kx
MSM8512-70/85/10
275mW
zj23
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Untitled
Abstract: No abstract text available
Text: MOSAIC SEMICONDUCTOR INC B 3E D • bBSBBTI G001222 Ibfl ■ HOC T~- H 6 mol aie Í2 8 K X 8 Y SRAM MSM8128X-85/10/12 Issue 3.0 : October 1992 Mosaic Sem iconductor f Pin Definition NC A16 A14 A12 A7 A6 AS A4 A3 A2 A1 AO DO D1 D2 GNO 131,072 X 8 CMOS High Speed Static RAM
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G001222
MSM8128X-85/10/12
MIL-STD-883
32pin0
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Untitled
Abstract: No abstract text available
Text: >£ 64 K X 4 Monolithic CMOS SRAM molale M o sa ic S e m ic o n d u c to r inc. MSM464T/V/W-45/55 Issue 2.1 : MAY 1992 PRELIMINARY 65,536 x 4 CMOS High Speed Static RAM Pin D efinitions Package T y p e ^ .V Features Very Fast Access Times of 45/55 ns Standard 24 pin Duai-ln-Une Package
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MSM464T/V/W-45/55
MIL-STD-883,
oS5la0cA92i2i
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Untitled
Abstract: No abstract text available
Text: f t e 1 o ws molate 6 4 K X 4 Monolithic CMOS SRAM MSM464T/V/W-45/55 Issue 2.0 : January 1992 M o sa ic S e m ic o n d u c to r PRELIMINARY 65,536 x 4 CMOS High Speed Static RAM ' P i n Definitions Package Type:T,'V’ Features Very Fast Access Times of 45/55 ns
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MSM464T/V/W-45/55
MIL-STD-883C
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Untitled
Abstract: No abstract text available
Text: fl« »• “ mol aie 4Meg x 1 Monolithic DRAM MDM14001-80/10/12 Issue 1.0 : January 1992 M o sa ic S e m ic o n d u c to r ADVANCE PRODUCT INFORMATION inc Pin Definition Package Type: 'K','V','G', 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns
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MDM14001-80/10/12
M1L-STD-883C
12mmercial
MIL-883C
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Untitled
Abstract: No abstract text available
Text: molate 1Meg X 4 Monolithic DRAM MDM41000-80/10/12/X0179 S e m ic o n d u c to r Issue 1.0: September 1992 inc. ADVANCE PRODUCT INFORMATION Pin Definition Package Type: •K'.'V/G'/W’.’J' 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns
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MDM41000-80/10/12/X0179
MIL-STD-883
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