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    D5 TRANSISTOR NPN Search Results

    D5 TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    D5 TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : • • High Speed Switching Time Complementary to 2SA1905 SÍI + D5 = ^-4V (Max.) (at Ic = 3A)


    OCR Scan     		2SC5076 2SA1905 961001EAA2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code


    OCR Scan     		Q62702-F1316 OT-23 fl235L 900MHz PDF

    74f832

    Abstract: f1804 74F240 74F845 AN215 74F30245 74F653 6kd-5 F1808 IEEE488 TRAnSCEIVER
    Text: INTEGRATED CIRCUITS AN215 74FXXXX “Light Load” input products 1988 Apr Philips Semiconductors Philips Semiconductors Application note 74FXXXX “Light Load” input products Major “Light Load” Input Features Introduction • Patented “Light Load” NPN input structure


    Original     		AN215 74FXXXX 74f832 f1804 74F240 74F845 AN215 74F30245 74F653 6kd-5 F1808 IEEE488 TRAnSCEIVER PDF

    f1804

    Abstract: 74F653 74F240 74F845 AN215 intel 8286 "IEEE-488 GPIB" 74F863
    Text: INTEGRATED CIRCUITS AN215 74FXXXX “Light Load” input products IC15 Data Handbook Philips Semiconductors April 1988 Philips Semiconductors Application note 74FXXXX “Light Load” input products Major “Light Load” Input Features Introduction • Patented “Light Load” NPN input structure


    Original     		AN215 74FXXXX f1804 74F653 74F240 74F845 AN215 intel 8286 "IEEE-488 GPIB" 74F863 PDF

    Transistor J550

    Abstract: VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550
    Text: Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —


    Original     		MRF426/D MRF426 Transistor J550 VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550 PDF

    1N5761

    Abstract: No abstract text available
    Text: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS


    Original     		BUL45 CurreUR150 MUR105 1N400 F/385 nF/1000 F/400 1N5761 PDF

    transistor smd LC 77

    Abstract: smd transistor ISS smd transistor 2x5 BLT81 smd transistor ISS 7 MAM043 C4901
    Text: Philips Semiconductors Product specif ication UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a


    OCR Scan     		BLT81 OT223 OT223 MAM043- 7110fl2b MRC089 711Dfl2b S0T223. 711002b transistor smd LC 77 smd transistor ISS smd transistor 2x5 BLT81 smd transistor ISS 7 MAM043 C4901 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial * - * microwave power transistor R02731B20W FEA TUR ES Q U IC K R E F E R E N C E DATA • Suitable for short and medium Microwave performance up to T mb = 25 °C in a common base class C


    OCR Scan     		R02731B20W 711005b PDF

    MARKING W2 SOT23 TRANSISTOR

    Abstract: sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR
    Text: 2SC2714 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS * High Current Gain Bandwidth Product fT=550MHz Package:SOT-23


    Original     		2SC2714 550MHz OT-23 CHARACTERIST12 600TYP 6614TYP 99221TYP 1102TYP MARKING W2 SOT23 TRANSISTOR sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR PDF

    MARKING W2 SOT23 TRANSISTOR

    Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
    Text: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)


    Original     		2SC2712LT1 150mA OT-23 2SA1162 600TYP 6614TYP 99221TYP 1102TYP MARKING W2 SOT23 TRANSISTOR ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG PDF

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KRX206U TE CHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including tw o devices in US6. U ltra Super m ini type w ith 6 leads. • W ith B uilt-in bias resistors.


    OCR Scan     		KRX206U PDF

    pc817a

    Abstract: D2257 transistor t114 330UF 400V LR2257 maxim 1909 ac PWM 220v 1N4148 1N5817 EN55022A
    Text: LESHAN RADIO COMPANY, LTD. LR2257 AC/DC Current Mode PWM power management controller The LR2257 AC—DC is a high efficiency current-mode PWM power supply controller that drives an internal NPN transistor for high voltage switching. Apply with BiCMOS technology, the


    Original     		LR2257 D2257 pc817a D2257 transistor t114 330UF 400V maxim 1909 ac PWM 220v 1N4148 1N5817 EN55022A PDF

    toroid FT10

    Abstract: MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629
    Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power


    Original     		BUL45/D BUL45 BUL45F* BUL45F BUL45/D* toroid FT10 MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629 PDF

    R22A

    Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
    Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener


    Original     		110VAC ZPS60-3 R22A transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E PDF

    1N5761

    Abstract: RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10
    Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA Designer's BUL45 * BUL45F*  Data Sheet NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power


    Original     		BUL45/D BUL45 BUL45F* BUL45F BUL45/D* 1N5761 RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10 PDF

    2SD2440

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2440 TO SHIBA TRANSISTOR SWITCHING APPLICATION • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) Low Saturation Voltage VCE(sat) = 1-2 V (MAX.) (IC = 5A, IB = 1A) High Speed : tf = 1 f a (TYP.) (Ic = 5 A, IB = ±0.5 A)


    OCR Scan     		2SD2440 961001EAA2' 2SD2440 PDF

    Transistor J550

    Abstract: MRF426 "30 mhz" driver Amplifier 100 watt hf transistor 12 volt 1N4997 2204B MOTOROLA LINEAR HF MOTOROLA MRF426
    Text: MOTOROLA Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —


    Original     		MRF426/D MRF426 MRF426/D* Transistor J550 MRF426 "30 mhz" driver Amplifier 100 watt hf transistor 12 volt 1N4997 2204B MOTOROLA LINEAR HF MOTOROLA MRF426 PDF

    1N5761

    Abstract: npn BUL45G bul45a
    Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)


    Original     		BUL45G BUL45/D 1N5761 npn BUL45G bul45a PDF

    toroid FT10

    Abstract: 1N5761 diode 1n400 MTP12N10 MTP8P10 MUR105 MUR150 1N4007 BUL45 MJE210
    Text: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS


    Original     		BUL45 r14525 BUL45/D toroid FT10 1N5761 diode 1n400 MTP12N10 MTP8P10 MUR105 MUR150 1N4007 BUL45 MJE210 PDF

    TRANSISTOR c 5578 B

    Abstract: 2N6427 2N6426 AN-41 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor
    Text: 2N6426 2N6427 NPN SILICON ANNULAR+ DAR LINGTON TRANSISTORS . . . designed for use as high-gain amplifiers control . circuits; drivers Collector-Emitter BVCEO for displays, Breakdown = 40 Vdc Min ● DC Current ● Low Noise Figure — Gain specified ●


    Original     		2N6426 2N6427 AN-41 AN-569. TRANSISTOR c 5578 B 2N6427 2N6426 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor PDF

    bul45g

    Abstract: No abstract text available
    Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)


    Original     		BUL45G O-220AB 21A-09 BUL45/D bul45g PDF

    IN5822 diode

    Abstract: Driver with MJE13003
    Text: BL8080 HIGH INTEGRATED PWM CONTROLLER GENERAL DISCRIPTION FEATURES The BL8080 is a PWM controller designed to drive high voltage NPN transistors. It integrates an oscillator, cycle-by-cycle current limit, thermal protection and over voltage protection, great reducing the number of external


    Original     		BL8080 BL8080 IN5822 IN4007 IN4148 470uF 330pF IN5822 diode Driver with MJE13003 PDF

    transistor BJT 2N2222

    Abstract: CTX01-15275 31353R-02 BCM3351 SI3230 BCM33XX bjt 2n2222 BCM11xx npn bjt 2N2222 FZT953
    Text: Si3233 P R O SLIC P R O G R A M M A B L E CMOS SLIC W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Software Programmable SLIC with codec interface Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft


    Original     		Si3233 transistor BJT 2N2222 CTX01-15275 31353R-02 BCM3351 SI3230 BCM33XX bjt 2n2222 BCM11xx npn bjt 2N2222 FZT953 PDF

    MRF426

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP


    OCR Scan     		MRF426 MRF426 PDF