D6 type diode
Abstract: a2s130 diode d6 diode 1600 rectifier D6 DIODE DATASHEET Usha Rectifier diode
Text: Rectifier Diode D6 Technical Data Typical applications : All purpose high power rectifier diodes, Non-controllable and half controlled rectifiers . Free-wheeling diodes. Type No. D6/02 D6/04 D6/08 D6/12 D6/16 VRRM Volts 200 400 800 1200 1600 Symbol I F(AV)
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D6/02
D6/04
D6/08
D6/12
D6/16
Ap6/16
D6 type diode
a2s130
diode d6
diode 1600 rectifier
D6 DIODE DATASHEET
Usha Rectifier diode
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MDD 500-22N1
Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●
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D6-11
D6-14
D6-17
D6-20
D6-23
D6-26
D6-29
D6-32
D6-35
D6-38
MDD 500-22N1
ixys MDD 26 - 14
ixys MDD 172 12
B2U 250
S2MD
2235nm
ixys MCC 700
IXYS MCC 550
mcc 550 ixys
MDD 500-12N1
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SMD TRANSISTOR L6
Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155
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STEVAL-ISS001V2
BAS16
100PPM
330UH
12X9MM
UBB-4R-D10T-1
SMD TRANSISTOR L6
transistor SMD Y1
y1 smd transistor
SMD TRANSISTOR Y1
1P smd transistor
y2 smd transistor
resistor smd 103
transistor smd R55
transistor smd j6
L6 smd transistor
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brake rectifier motor
Abstract: dc chopper circuit ANS5 diode x18
Text: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V A4 D D1 1200 1600 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D3 D5 N7 T D2 D4 D6 X18 L9
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brake rectifier motor
Abstract: DIODE N7
Text: Advanced Technical Information VRRM = 1200/1600 V IdAVM = 56 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System in ECO-PAC 2 VRRM V16 Type V VUB 50 A4 D D1 VUB 50-12 PO1 VUB 50-16 PO1 K1 D1 G1 D5 N7 T D2 D4 D6 X18 L9 R9 Features
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diode ZENER C2 smd
Abstract: capacitor 100nF capacitor 100nf 50v Diode zener smd d4 SMD ZENER DIODE d7 smd L2 diode 805 smd resistor SMD ZENER DIODE d4 Zener diode 18V SOD80 smd 1a 400v diode
Text: STMicroelectronics: STEVAL-ISA005V1 QTY Reference 1 CON1 1 2 1 1 1 2 2 1 2 1 1 1 1 1 1 2 1 1 CON2 C1, C2 C3 C4 C6 C7, C8 D1, D2 D3 D4, D5 D6 D7 L1 L2 R1 R3 R5, R6 U1 U2 May-07 Part Description Mfg P/n Clamp, 2 pole, horizontal, type 94, 380V 15A connector
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STEVAL-ISA005V1
May-07
940-T-DS/02
940-T-DS/03
TC04RKMG400VB4R7M
TC04RLXY35VB56M
TC04RKME50VB10M
100nF
ZMM13
RGL34J
diode ZENER C2 smd
capacitor 100nF
capacitor 100nf 50v
Diode zener smd d4
SMD ZENER DIODE d7
smd L2 diode
805 smd resistor
SMD ZENER DIODE d4
Zener diode 18V SOD80
smd 1a 400v diode
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ups D6-11
Abstract: MKI 50-06 A7 A7t diode 20 mki 5
Text: MKI 50-06 A7 MKI 50-06 A7T IC25 = 72 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type 13 NTC - Option MKI 50-06 A7 MKI 50-06 A7T T1 T5 D1 D5 9 1 without NTC with NTC T 10 2 16 T2 14 T6 D2 D6 11 T 3 12
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MWI5006A7
20110119a
ups D6-11
MKI 50-06 A7
A7t diode
20 mki 5
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Untitled
Abstract: No abstract text available
Text: MKI 50-06 A7 MKI 50-06 A7T IC25 = 72 A VCES = 600 V VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type 13 NTC - Option MKI 50-06 A7 MKI 50-06 A7T T1 T5 D1 D5 9 1 without NTC with NTC T 10 2 16 14 T6 T2 D2 D6 11 T 3 12
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MWI5006A7
20110119a
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KDP620UL
Abstract: No abstract text available
Text: SEMICONDUCTOR KDP620UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B ・Array type 6 Diode in one package ・Low Capacitance ・Low Series resistance 12 DIM A B C D E F G MAXIMUM RATING (Ta=25℃)
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KDP620UL
ULP-12
100MHz
KDP620UL
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diode D5 marking
Abstract: KDP622UL marking d6 MARKING D6 diode IR 106 D1 D6 type diode
Text: SEMICONDUCTOR KDP622UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B Array type 6 Diode in one package Low Capacitance Low Series resistance 12 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage
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KDP622UL
ULP-12
100MHz
diode D5 marking
KDP622UL
marking d6
MARKING D6 diode
IR 106 D1
D6 type diode
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KDP620UL
Abstract: No abstract text available
Text: SEMICONDUCTOR KDP620UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B Array type 6 Diode in one package Low Capacitance Low Series resistance 12 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage
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KDP620UL
ULP-12
100MHz
KDP620UL
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d3 marking
Abstract: No abstract text available
Text: SEMICONDUCTOR KDP622UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 1 6 B E ・Array type 6 Diode in one package ・Low Capacitance ・Low Series resistance 12 DIM A B C D E F G MAXIMUM RATING (Ta=25℃)
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KDP622UL
ULP-12
100MHz
d3 marking
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDP620UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 6 E 1 B Array type 6 Diode in one package Low Capacitance Low Series resistance 12 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage
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KDP620UL
ULP-12
100MHz
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marking d4
Abstract: No abstract text available
Text: SEMICONDUCTOR KDP630UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. TENTATIVE FEATURES ・Array type 6 Diode in one package ・Low Capacitance A ・Low Series resistance D 6 B E 1 12 TOP VIEW C 7 BOTTOM VIEW
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KDP630UL
ULP-12
100MHz
marking d4
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CC25-12GWA
Abstract: 140D7
Text: 6.2mm 0.25INCH FOUR DIGIT NUMERIC DISPLAY Part Number: CC25-12GWA GREEN Features Description z0.25 INCH DIGIT HEIGHT The Green source color devices are made with Gallium zLOW CURRENT OPERATION. Phosphide Green Light Emitting Diode. zEXCELLENT CHARACTER APPEARANCE.
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25INCH)
CC25-12GWA
DSAA5311
MAY/22/2007
CC25-12GWA
140D7
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Untitled
Abstract: No abstract text available
Text: 6.2mm 0.25INCH FOUR DIGIT NUMERIC DISPLAY Part Number: CA25-12CGKWA Green Description Features 0.25 inch digit height The Green source color devices are made with AlGaInP on Low current operation. GaAs substrate Light Emitting Diode. Excellent character appearance.
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25INCH)
CA25-12CGKWA
DSAK2814
SEP/28/2010
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Untitled
Abstract: No abstract text available
Text: 6.2mm 0.25INCH FOUR DIGIT NUMERIC DISPLAY Part Number: CC25-12CGKWA Green Description Features 0.25 inch digit height The Green source color devices are made with AlGaInP on Low current operation. GaAs substrate Light Emitting Diode. Excellent character appearance.
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25INCH)
CC25-12CGKWA
DSAK2815
SEP/28/2010
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D6 type diode
Abstract: D626 D635 ixys mdd D617 d632 72 diode D620 diode mdd 310 MDO 26
Text: Rectifier Diode Modules Contents Package style V rrm/V oRm V Type Page MDO 26 D6-2 MDD 44 D6-5 S Diode Modules 1999 IXYS All rights reserved MDD 56 D6-8 MDD 72 D6-11 MDD 95 D6-14 MDD 142 D6-17 MDD 172 D6-20 MDD 220 D6-23 MDD 250 D6-26 MDD 255 D6-29 MDD 310
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D6-11
D6-14
D6-17
D6-20
D6-23
D6-26
D6-29
D6-32
D6-35
D6-38
D6 type diode
D626
D635
ixys mdd
D617
d632
72 diode
D620
diode mdd 310
MDO 26
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 2 .8 -0 3 + 0.2 . HN2D01F is composed of 3 independent diodes, . T.ow Forward Voltage 1.6 - 0.1 : Vp=0.98V Typ. D6 . Fast Reverse Recovery Time : trr= 1.6ns (Typ.) . Small. Total Capacitance
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HN2D01F
HN2D01F
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Leistungsdiode
Abstract: Diodes de redressement
Text: Kleine Leistungsdioden Low power diodes Diodes de faible puissance Gleichrichterdioden Typ Rectifier diodes Type Vrrm I fa v m Ifs m V Outline Dimension A 160 O J ÎI *1200 D6 / ‘v Typ 1400 ' a ï i i f e . i r . If s m tA = 4 5 °C V A •• < 1600
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74AC
Abstract: TC74VHCT573A TC74VHCT573AF TC74VHCT573AFT TC74VHCT573AFW
Text: TOSHIBA TC74VHCT573AF/AFW/AFT TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74VHCT573AF, TC74VHCT573AFW, TC74VHCT573AFT OCTAL D-TYPE LATCH WITH 3 - STATE OUTPUT TRUTH TABLE [ [ C [ [ [ [ [ [ [ < OE 1 DO 2 D1 3 D2 4 D3 5 D4 6 D5 7 D6 8
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TC74VHCT573AF/AFW/AFT
TC74VHCT573AF,
TC74VHCT573AFW,
TC74VHCT573AFT
TC74VHCT573A
20PIN
200mil
OP20-P-300-1
685TYP
74AC
TC74VHCT573AF
TC74VHCT573AFT
TC74VHCT573AFW
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ZR500
Abstract: zr2000 ZR12
Text: Power S em icon du ctor Devices Soft Recovery Diodes—Disc Type Ip AV Model V rrm @Tc=1051C A IpSM V fm @50HZ V ta Qrr Rtlyc Ty) it • PC V/W V 0.080 150 D6 0.040 150 D7 0.030 150 D9 0.021 150 D ll Outline @IpM kA V A ZR200/18 200 1800 2.5 2.0 600 1.0
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ZR200/18
ZR300/25
ZR500/20
ZR600/16
ZR500/45
ZR800/36
ZR1000/25
ZR1000/45
ZR1200/36
ZR1500/25
ZR500
zr2000
ZR12
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Power Diodes
Abstract: No abstract text available
Text: Low power diodes Rectifier diodes Type O utline I favm trr tv, max A A US °C 400 800 160 3 - 150 112 400 • 800 1200 1400 1600 100 6 150 114 I favm tv j max O utline A °c If s m V rrm î = 10 ms tv] = tv j max V D 3 / ■ Controlled avalanche diodes D6/
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D3S 50
Abstract: OA61 AEG Diode
Text: A E G CORP 17E D 005145b 000*1335 3 Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm V D 1,5/ A IS A /°C 400 800 50 100 400 200 800 55 200 600 400 160 800 150 800 1000 110 1200 ¡50 D3/ D6/ trr 200 600 1000 D2S D3S •favm Ifsm t=>10m* tal
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005145b
I-10m
lF-lR-10mA
-dlF/dt-15A/ns
D3S 50
OA61
AEG Diode
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