IC-Socket
Abstract: 32k x 8 sram CMOS 28 DIP dallas 32 pin IC SOCKET 32-PIN DS1213B DS1213D
Text: DS1213D DS1213D SmartSocket 256K/1M FEATURES • Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data • Data retention time is greater than 10 years with the
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DS1213D
256K/1M
32-PIN
DS1213D
32-PIN
IC-Socket
32k x 8 sram CMOS 28 DIP
dallas 32 pin
IC SOCKET
DS1213B
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1213D SmartSocket 256k/1M www.dalsemi.com PIN ASSIGNMENT FEATURES Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection
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DS1213D
256k/1M
32-Pin
32-pin,
DS1213B
DS1213D
32-PIN
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PDF
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4013 internal circuit
Abstract: DS1213D 32-PIN DS1213B
Text: DS1213D SmartSocket 256k/1M www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection
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DS1213D
256k/1M
32-Pin
DS1213B
DS1213D
32-PIN
4013 internal circuit
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PDF
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DS1613D
Abstract: transistor a13 transistor A16 32-PIN DS1613C 128K X 8 BIT CMOS SRAM
Text: DS1613D DS1613D Partitionable 1024K SmartSocket FEATURES PIN ASSIGNMENT • Accepts standard 128K x 8, CMOS static RAM • Embedded lithium energy cell retains RAM data • Unconditionally 1 32 VCC A16 2 31 A15 A14 3 30 write protects all of memory when VCC is out of tolerance
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DS1613D
1024K
32-PIN
DS1613D
32-PIN
transistor a13
transistor A16
DS1613C
128K X 8 BIT CMOS SRAM
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32-PIN
Abstract: DS1245 DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS1245Y-85
Text: DS1245Y/AB DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 NC A12 4 29 WE A7 5 28 A13 A6 6 27 A8 • Low-power CMOS A5 7 26 A9 • Read and write access times as fast as 70 ns
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DS1245Y/AB
1024K
DS1245YL/ABL
34-PIN
DS34PIN
32-PIN
DS1245
DS1245AB
DS1245AB-70
DS1245Y
DS1245Y-70
DS1245Y-85
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34-pin
Abstract: 32-PIN DS1250 DS1250AB DS1250Y
Text: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • Read and write access times as fast as 70 ns
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DS1250Y/AB
4096K
DS1250AB)
DS1250Y/AB
34-PIN
DS34PIN
32-PIN
DS1250
DS1250AB
DS1250Y
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PDF
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ds1249ab70
Abstract: No abstract text available
Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation
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DS1249Y/AB
2048k
DS1249Y)
DS1249AB)
32-pin
AB-70#
DS1249AB-85#
DS1249AB-85IND#
DS1249AB-70IND#
DS1249AB-100
ds1249ab70
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DS1650Y
Abstract: 32-PIN DS1650 DS1650AB DS1650Y-100
Text: DS1650Y/AB DS1650Y/AB Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 • Low-power CMOS A3 9 24 OE • Read and write access times as fast as 70 ns
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DS1650Y/AB
4096K
DS1650Y/AB
DS34PIN
DS1650Y
32-PIN
DS1650
DS1650AB
DS1650Y-100
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PDF
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bq4015
Abstract: bq4015Y
Text: bq4015/bq4015Y 512Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4015 is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integ ral co ntr ol c ir cuitry and li thium energy source provide
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bq4015/bq4015Y
512Kx8
bq4015
304-bit
32-pin
10-year
bq4015Y
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PDF
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32-PIN
Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation
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DS1249Y/AB
2048k
DS1249Y)
DS1249AB)
32-pin
32-pin,
600-mil
DS1249Y/AB
740-MIL
DS1249AB
DS1249AB-100
DS1249AB-70
DS1249Y
DS1249Y-100
DS1249Y-70
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PDF
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32-PIN
Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns
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DS1249Y/AB
2048k
DS1249Y)
DS1249AB)
32-pin
32-pin,
600-mil
DS1249Y/AB
740-MIL
DS1249AB
DS1249AB-100
DS1249AB-70
DS1249Y
DS1249Y-100
DS1249Y-70
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PDF
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32-PIN
Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
Text: DS1249Y/AB 2048k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns
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DS1249Y/AB
2048k
DS1249Y)
DS1249AB)
32-pin
A11TTP
32-pin,
600-mil
DS1249Y/AB
DS1249AB
DS1249AB-100
DS1249AB-70
DS1249Y
DS1249Y-100
DS1249Y-70
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1213D DALLAS SEMICONDUCTOR DS1213D SmartSocket 256K/1M PIN ASSIGNMENT FEATURES * Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs 1 32 K 2 * Embedded lithium energy cell retains RAM data * Self-contained circuitry safeguards data 3 30 4 29 5 28 * Data retention time is greater than 10 years with the
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OCR Scan
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DS1213D
256K/1M
128Kx8
32-PIN
0Q13B12
DS1213D
32-PIN
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PDF
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d ram memory ic
Abstract: dallas 32 pin IC socket 32pin
Text: DALLAS DS1213D SmartSocket 256K/1M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs 32 Vcc 31 • Embedded lithium energy cell retains RAM data 30 V cc 29 • Self-contained circuitry safeguards data
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OCR Scan
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256K/1M
S1213D
32-Pin
28-pin
DS1213B
16/64K
DS1213D
d ram memory ic
dallas 32 pin
IC socket 32pin
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PDF
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ic 4013 cmos
Abstract: 16 pin DIP socket 32-PIN DS1213B DS1213D of 4013 ic IC CMOS 4013
Text: DS1213D SmartSocket 256k/1M !• DALLAS nr mmimmmmm www.dalsemi.com PIN ASSIGNMENT FEATURES Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years
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OCR Scan
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DS1213D
256k/1M
32-Pin
32-pin,
DS1213B
DS1213D
32-PIN
ic 4013 cmos
16 pin DIP socket
of 4013 ic
IC CMOS 4013
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PDF
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1245Y
Abstract: No abstract text available
Text: DS 1245Y/A B DALLAS SEMICONDUCTOR FEATURES DS1245Y/AB 1024K Nonvolatile SRAM PIN ASSIGNMENT I 1 A14 • Data is automatically protected during power loss I 1 1 32 1 2 3 31 • Unlimited write cycles • Low-power CMOS • Full ±10% Vqc operating range DS1245Y
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OCR Scan
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1245Y/A
Replaces128K
DS1245Y/AB
1024K
appli025
34-PIN
1245Y
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1613D DALLAS DS1613D SEMICONDUCTOR Partitioned SmartSocket 1M FEATURES PIN ASSIGNMENT • Accepts standard 128K x 8, CMOS static RAM Vcc A16 • Embedded lithium energy cell retains RAM data A15 A14 • Self-contained circuitry safeguards data WE A13 • Unconditionally write protects all of memory when
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OCR Scan
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DS1613D
32-PIN
DS1613D
32-PIN
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PDF
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S1613D
Abstract: 1101 Static RAM
Text: D S1613D DALLAS SEMICONDUCTOR DS1613D Partitioned SmartSocket 1M FEATURES PIN ASSIGNMENT • Accepts standard 128K x 8, CMOS static RAM Vcc A15 A16 • Embedded lithium energy cell retains RAM data A14 • Self-contained circuitry safeguards data WE A13 • Unconditionally write protects all of memory when
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OCR Scan
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S1613D
DS1613D
32-PIN
DS1613D
S1613D
1101 Static RAM
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1613D DALLAS SEMICONDUCTOR D S1613D Partitionable 1024K SmartSocket FEATURES PIN ASSIGNMENT • Accepts standard 128Kx 8, CMOS static RAM Vcc A15 A16 • Embedded lithium energy cell retains RAM data A14 • Unconditionally write protects all of memory when
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OCR Scan
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DS1613D
S1613D
1024K
128Kx
32-PIN
A13-A16
EblM13D
Q1371R
DS1613D
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PDF
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Untitled
Abstract: No abstract text available
Text: D S1216D DALLAS SEMICONDUCTOR SmartWatch/RAM 256K/1M FEATURES PIN ASSIGNMENT DS1216D • Converts standard 8K x 8, 32K x 8, 128K x 8, and 512K x 8 CMOS static RAMs into nonvolatile memory 1 •■■ 32 V CC • Embedded lithium energy cell maintains watch infor
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OCR Scan
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S1216D
DS1216D
256K/1M
28-pin
32-pin
DS1216D
256K/1M
32-pin,
SeetheDS1216B
16/64K
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1613D DALLAS DS1613D Partitioned SmartSocket 1M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Accepts standard 128K x 8, CMOS static RAM | Vcc A16 31 1 A15 A14 301 NC | WE 28 1 A13 32 • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data
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OCR Scan
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DS1613D
DS1613D
32-PIN
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PDF
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interfacing 8051 with ds17887
Abstract: ds12b887 8051 DS12887 DS1215 equivalent DALLAS DS12B887 DS1307 IC with 8051 DS1213 equivalent ds1386-32-120 ds1386-8-150 DS1644-150
Text: TIMEKEEPING FAMILY OVERVIEW Aft DALLAS h W SEMICONDUCTOR DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 Tel: 214-450-0448 FAX: 214-450-3715 Literature & Technical Support: 214-450-0448 Sales & Customer Service: 214-450-0969 Automatic Data Sheet Faxback: 214-450-0441
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OCR Scan
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DS1213,
DS1216,
DS1613
DS1602/DS1603
17x85/87
DS1307
DS1670
interfacing 8051 with ds17887
ds12b887
8051 DS12887
DS1215 equivalent
DALLAS DS12B887
DS1307 IC with 8051
DS1213 equivalent
ds1386-32-120
ds1386-8-150
DS1644-150
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PDF
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dallas 32 pin
Abstract: MEMORY IC 32-PIN
Text: DALLAS s e m ic o n d u c to r DS1216F SmartWatch/ROM 64K/256K/1M FEATURES PIN ASSIGNMENT • Adds timekeeping to any 32-pin JEDEC bytewide memory location RST 1 II 2 I 32 Vcc 31 I • Embedded lithium energy cell maintains calendar time for more than 10 years in the absence of power
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OCR Scan
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DS1216F
64K/256K/1M
32-pin
DS1216E
SmartWatch/ROM/64/256K
dallas 32 pin
MEMORY IC 32-PIN
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PDF
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32-PIN
Abstract: 34-PIN DS1250 DS1250AB DS1250Y al229
Text: D S 1250Y /A B DALLAS DS1250Y/AB 4096K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc • Data is automatically protected during power loss A15 A17 • Directly replaces 512K x 8 volatile static RAM
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OCR Scan
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DS1250Y/AB
4096K
DS1250Y)
DS1250AB)
32-pin
DS1250Y/AB
34-PIN
68-pin
DS1250
DS1250AB
DS1250Y
al229
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PDF
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