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    DALLAS 32PIN CMOS Search Results

    DALLAS 32PIN CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MG80C186XL-20/R Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    MD87C51-16/B Rochester Electronics LLC Microcontroller, CMOS Visit Rochester Electronics LLC Buy
    A80C286-12 Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy

    DALLAS 32PIN CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IC-Socket

    Abstract: 32k x 8 sram CMOS 28 DIP dallas 32 pin IC SOCKET 32-PIN DS1213B DS1213D
    Text: DS1213D DS1213D SmartSocket 256K/1M FEATURES • Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data • Data retention time is greater than 10 years with the


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    DS1213D 256K/1M 32-PIN DS1213D 32-PIN IC-Socket 32k x 8 sram CMOS 28 DIP dallas 32 pin IC SOCKET DS1213B PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1213D SmartSocket 256k/1M www.dalsemi.com PIN ASSIGNMENT FEATURES Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection


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    DS1213D 256k/1M 32-Pin 32-pin, DS1213B DS1213D 32-PIN PDF

    4013 internal circuit

    Abstract: DS1213D 32-PIN DS1213B
    Text: DS1213D SmartSocket 256k/1M www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection


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    DS1213D 256k/1M 32-Pin DS1213B DS1213D 32-PIN 4013 internal circuit PDF

    DS1613D

    Abstract: transistor a13 transistor A16 32-PIN DS1613C 128K X 8 BIT CMOS SRAM
    Text: DS1613D DS1613D Partitionable 1024K SmartSocket FEATURES PIN ASSIGNMENT • Accepts standard 128K x 8, CMOS static RAM • Embedded lithium energy cell retains RAM data • Unconditionally 1 32 VCC A16 2 31 A15 A14 3 30 write protects all of memory when VCC is out of tolerance


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    DS1613D 1024K 32-PIN DS1613D 32-PIN transistor a13 transistor A16 DS1613C 128K X 8 BIT CMOS SRAM PDF

    32-PIN

    Abstract: DS1245 DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS1245Y-85
    Text: DS1245Y/AB DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 NC A12 4 29 WE A7 5 28 A13 A6 6 27 A8 • Low-power CMOS A5 7 26 A9 • Read and write access times as fast as 70 ns


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    DS1245Y/AB 1024K DS1245YL/ABL 34-PIN DS34PIN 32-PIN DS1245 DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS1245Y-85 PDF

    34-pin

    Abstract: 32-PIN DS1250 DS1250AB DS1250Y
    Text: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • Read and write access times as fast as 70 ns


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    DS1250Y/AB 4096K DS1250AB) DS1250Y/AB 34-PIN DS34PIN 32-PIN DS1250 DS1250AB DS1250Y PDF

    ds1249ab70

    Abstract: No abstract text available
    Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


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    DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin AB-70# DS1249AB-85# DS1249AB-85IND# DS1249AB-70IND# DS1249AB-100 ds1249ab70 PDF

    DS1650Y

    Abstract: 32-PIN DS1650 DS1650AB DS1650Y-100
    Text: DS1650Y/AB DS1650Y/AB Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 • Low-power CMOS A3 9 24 OE • Read and write access times as fast as 70 ns


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    DS1650Y/AB 4096K DS1650Y/AB DS34PIN DS1650Y 32-PIN DS1650 DS1650AB DS1650Y-100 PDF

    bq4015

    Abstract: bq4015Y
    Text: bq4015/bq4015Y 512Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4015 is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integ ral co ntr ol c ir cuitry and li thium energy source provide


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    bq4015/bq4015Y 512Kx8 bq4015 304-bit 32-pin 10-year bq4015Y PDF

    32-PIN

    Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
    Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


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    DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin 32-pin, 600-mil DS1249Y/AB 740-MIL DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70 PDF

    32-PIN

    Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
    Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


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    DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin 32-pin, 600-mil DS1249Y/AB 740-MIL DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70 PDF

    32-PIN

    Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
    Text: DS1249Y/AB 2048k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


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    DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin A11TTP 32-pin, 600-mil DS1249Y/AB DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1213D DALLAS SEMICONDUCTOR DS1213D SmartSocket 256K/1M PIN ASSIGNMENT FEATURES * Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs 1 32 K 2 * Embedded lithium energy cell retains RAM data * Self-contained circuitry safeguards data 3 30 4 29 5 28 * Data retention time is greater than 10 years with the


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    DS1213D 256K/1M 128Kx8 32-PIN 0Q13B12 DS1213D 32-PIN PDF

    d ram memory ic

    Abstract: dallas 32 pin IC socket 32pin
    Text: DALLAS DS1213D SmartSocket 256K/1M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs 32 Vcc 31 • Embedded lithium energy cell retains RAM data 30 V cc 29 • Self-contained circuitry safeguards data


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    256K/1M S1213D 32-Pin 28-pin DS1213B 16/64K DS1213D d ram memory ic dallas 32 pin IC socket 32pin PDF

    ic 4013 cmos

    Abstract: 16 pin DIP socket 32-PIN DS1213B DS1213D of 4013 ic IC CMOS 4013
    Text: DS1213D SmartSocket 256k/1M !• DALLAS nr mmimmmmm www.dalsemi.com PIN ASSIGNMENT FEATURES Accepts standard 32K x 8 or 128K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years


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    DS1213D 256k/1M 32-Pin 32-pin, DS1213B DS1213D 32-PIN ic 4013 cmos 16 pin DIP socket of 4013 ic IC CMOS 4013 PDF

    1245Y

    Abstract: No abstract text available
    Text: DS 1245Y/A B DALLAS SEMICONDUCTOR FEATURES DS1245Y/AB 1024K Nonvolatile SRAM PIN ASSIGNMENT I 1 A14 • Data is automatically protected during power loss I 1 1 32 1 2 3 31 • Unlimited write cycles • Low-power CMOS • Full ±10% Vqc operating range DS1245Y


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    1245Y/A Replaces128K DS1245Y/AB 1024K appli025 34-PIN 1245Y PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1613D DALLAS DS1613D SEMICONDUCTOR Partitioned SmartSocket 1M FEATURES PIN ASSIGNMENT • Accepts standard 128K x 8, CMOS static RAM Vcc A16 • Embedded lithium energy cell retains RAM data A15 A14 • Self-contained circuitry safeguards data WE A13 • Unconditionally write protects all of memory when


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    DS1613D 32-PIN DS1613D 32-PIN PDF

    S1613D

    Abstract: 1101 Static RAM
    Text: D S1613D DALLAS SEMICONDUCTOR DS1613D Partitioned SmartSocket 1M FEATURES PIN ASSIGNMENT • Accepts standard 128K x 8, CMOS static RAM Vcc A15 A16 • Embedded lithium energy cell retains RAM data A14 • Self-contained circuitry safeguards data WE A13 • Unconditionally write protects all of memory when


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    S1613D DS1613D 32-PIN DS1613D S1613D 1101 Static RAM PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1613D DALLAS SEMICONDUCTOR D S1613D Partitionable 1024K SmartSocket FEATURES PIN ASSIGNMENT • Accepts standard 128Kx 8, CMOS static RAM Vcc A15 A16 • Embedded lithium energy cell retains RAM data A14 • Unconditionally write protects all of memory when


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    DS1613D S1613D 1024K 128Kx 32-PIN A13-A16 EblM13D Q1371R DS1613D PDF

    Untitled

    Abstract: No abstract text available
    Text: D S1216D DALLAS SEMICONDUCTOR SmartWatch/RAM 256K/1M FEATURES PIN ASSIGNMENT DS1216D • Converts standard 8K x 8, 32K x 8, 128K x 8, and 512K x 8 CMOS static RAMs into nonvolatile memory 1 •■■ 32 V CC • Embedded lithium energy cell maintains watch infor­


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    S1216D DS1216D 256K/1M 28-pin 32-pin DS1216D 256K/1M 32-pin, SeetheDS1216B 16/64K PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1613D DALLAS DS1613D Partitioned SmartSocket 1M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Accepts standard 128K x 8, CMOS static RAM | Vcc A16 31 1 A15 A14 301 NC | WE 28 1 A13 32 • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data


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    DS1613D DS1613D 32-PIN PDF

    interfacing 8051 with ds17887

    Abstract: ds12b887 8051 DS12887 DS1215 equivalent DALLAS DS12B887 DS1307 IC with 8051 DS1213 equivalent ds1386-32-120 ds1386-8-150 DS1644-150
    Text: TIMEKEEPING FAMILY OVERVIEW Aft DALLAS h W SEMICONDUCTOR DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 Tel: 214-450-0448 FAX: 214-450-3715 Literature & Technical Support: 214-450-0448 Sales & Customer Service: 214-450-0969 Automatic Data Sheet Faxback: 214-450-0441


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    DS1213, DS1216, DS1613 DS1602/DS1603 17x85/87 DS1307 DS1670 interfacing 8051 with ds17887 ds12b887 8051 DS12887 DS1215 equivalent DALLAS DS12B887 DS1307 IC with 8051 DS1213 equivalent ds1386-32-120 ds1386-8-150 DS1644-150 PDF

    dallas 32 pin

    Abstract: MEMORY IC 32-PIN
    Text: DALLAS s e m ic o n d u c to r DS1216F SmartWatch/ROM 64K/256K/1M FEATURES PIN ASSIGNMENT • Adds timekeeping to any 32-pin JEDEC bytewide memory location RST 1 II 2 I 32 Vcc 31 I • Embedded lithium energy cell maintains calendar time for more than 10 years in the absence of power


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    DS1216F 64K/256K/1M 32-pin DS1216E SmartWatch/ROM/64/256K dallas 32 pin MEMORY IC 32-PIN PDF

    32-PIN

    Abstract: 34-PIN DS1250 DS1250AB DS1250Y al229
    Text: D S 1250Y /A B DALLAS DS1250Y/AB 4096K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc • Data is automatically protected during power loss A15 A17 • Directly replaces 512K x 8 volatile static RAM


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    DS1250Y/AB 4096K DS1250Y) DS1250AB) 32-pin DS1250Y/AB 34-PIN 68-pin DS1250 DS1250AB DS1250Y al229 PDF