ds1214
Abstract: dallas ds1280 DS1666 PRODUCT CHANGE NOTICE DS2013 DS1666-50 DS1667-100 DS1666 DS2011 DS1003 DS1007
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 11/4/97 Subject: PRODUCT CHANGE NOTICE - J70201 Description: New Passivation Deposition Equipment
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J70201
DS1003
DS1214
DS1292
DS1667-100
DS2013
DS21A81
DS1007
DS1218
DS12S85
ds1214
dallas ds1280
DS1666 PRODUCT CHANGE NOTICE
DS2013
DS1666-50
DS1667-100
DS1666
DS2011
DS1003
DS1007
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DS2013D
Abstract: DS2009R DS2010 DS2011D DS2015 DS1609 DS2013 "Dual-Port RAM" DS2010R DS2011
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: September 20, 1996 To: MET Laboratories, Baltimore, MD Subject: PRODUCT CHANGE NOTICE – H62901 Description: Product Obsolescence – DS20XX FIFO Family and
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H62901
DS20XX
DS1609
DS20XX
DS2015
DS1609
DS2009
DS1609B
DS2009D
DS2013D
DS2009R
DS2010
DS2011D
DS2013
"Dual-Port RAM"
DS2010R
DS2011
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DS12S85
Abstract: Dallas DS1212 DS2011 J406 DS80C520 ds2107 DS1667 DS1669 DS1128 DS232
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: October 20, 1994 To: Subject: PRODUCT CHANGE NOTICE – J40601 Description: Process Moving to new Site or Building in ANAM This letter serves as notification of particular product / process moves within the assembly operations
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J40601
DS2107C
DS2430
DS1185
DS11285
DS1212
DS1284
DS1285
DS12885
DS12S85
DS12S85
Dallas DS1212
DS2011
J406
DS80C520
ds2107
DS1667
DS1669
DS1128
DS232
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DS1223
Abstract: ds1232l datasheet dallas ds1213 DS1267A dallas ds2501 Datasheet DS2501 dallas ds2501 ds2501 Datasheet DS1272 ds1213
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: March 28, 1997 Subject: PRODUCT CHANGE NOTICE – B71801–A ERRATA Description: Traceability Marking Location Change – SOICs Errata Description: There is an error in PCN B71801 – A number of devices were inadvertently overlooked while others
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B71801
B71801
interpretS1625
DS1632
DS1236S
DS1238S
DS1238AS
DS1239S
DS1236AS
DS1223
ds1232l datasheet
dallas ds1213
DS1267A
dallas ds2501 Datasheet
DS2501
dallas ds2501
ds2501 Datasheet
DS1272
ds1213
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Ablebond
Abstract: ABLEBONd 84-1 Ablebond 8361J DS83520 8361J 84-1 LMIs DS1684 DS80320 Dallas DS1212 DS2130
Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: March 11, 1997 Subject: PRODUCT CHANGE NOTICE – B70302 Description: Die Attach Adhesive Change for PLCC Devices Description of Change: The die attach adhesive will be changed from Ablebond 84–1 LMIS to Ablebond 8361J for all PLCC
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B70302
8361J
DS1212
DS2012
DS1284
DS2130
DS1285
DS2141
DS2009
DS2143
Ablebond
ABLEBONd 84-1
Ablebond 8361J
DS83520
84-1 LMIs
DS1684
DS80320
Dallas DS1212
DS2130
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89004
Abstract: application notes signetics siemens diode DS1640 Siemens Digital Book CPU Zilog KDS 11,0592 oscillator Microcontroller-Based Clock Using DS1307 T-CON Schematic SONY sram book
Text: I Copyright 1995 by Dallas Semiconductor Corporation. All Rights Reserved. Dallas Semiconductor retains all ownership rights in the technology described herein. Trademarks and registered trademarks of Dallas Semiconductor include each of the following:
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16-bit,
89004
application notes signetics
siemens diode
DS1640
Siemens Digital Book
CPU Zilog
KDS 11,0592 oscillator
Microcontroller-Based Clock Using DS1307
T-CON Schematic SONY
sram book
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DS1494L-F5
Abstract: DS1231N-35 diode s1045s ds1494 DS1994 DS1820 ASM example ds1225ad ic date codes dallas date code FOR DS1230Y S1045S DS19S DS1236s replacement
Text: Ffll 9 3 ^*0 i AC 1 08 1 62 Touch Memory EconoMemories Software Authorization DALLAS SEMICONDUCTOR Copyright 1994 Dallas Semiconductor Corporation, Dallas, Texas All Rights Reserved. Circuit diagrams are included to illustrate typical semiconductor applications. Complete information sufficient for
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28-PIN
DS9003
DS1494L-F5
DS1231N-35
diode s1045s
ds1494 DS1994
DS1820 ASM example
ds1225ad ic date codes
dallas date code FOR DS1230Y
S1045S
DS19S
DS1236s replacement
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DS1868
Abstract: LM 4440 AUDIO AMPLIFIER CIRCUIT DS1230y-200 battery date codes circuit diagram laptop motherboard Scans-049 texas instrument catalog 74ls DS1666-50 st c031 s1040 diode
Text: S ystem E x t e n s i o n Data Book CPU Supervisors Digital Potentiometers Silicon Timed Circuits Thermal Products DALLAS SEMICONDUCTOR Copyright 1994 Dallas Semiconductor Corporation, Dallas, Texas All Rights Reserved. Circuit diagrams are included to illustrate typical semiconductor applications. Complete information sufficient for
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28-PIN
DS9003
DS1868
LM 4440 AUDIO AMPLIFIER CIRCUIT
DS1230y-200 battery date codes
circuit diagram laptop motherboard
Scans-049
texas instrument
catalog 74ls
DS1666-50
st c031
s1040 diode
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dallas DS2009
Abstract: cbc 327 t4635 DS200B DS2000-35 512X9 DS200D ds2000 DS2011 DS200
Text: DS2009 DALLAS S EM IC ON DU CTO R CORP SGE D 2bl413G DDDHbOl 2 DALLAS SEMICONDUCTOR DAL - 3 5 ~ DS2009 5 1 2 x 9 F IFO Chip FEATURES 3 PIN ASSIGNMENT • First-in, first-out memory-based architecture W C 1# 2$ □ VCC sseS gsi DSC 2 27 304 f"A T 'T T3S3fâ6'
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DS200Â
2bl4130
DS2009
512x9
120ns
T-46-35
DS2010,
DS2011,
dallas DS2009
cbc 327
t4635
DS200B
DS2000-35
DS200D
ds2000
DS2011
DS200
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2BL4
Abstract: DS2009 DS2012
Text: DS2012 DALLAS SEMICONDUCTOR CORP SDE D 2bl413ü DALLAS SEMICONDUCTOR O O O l4 b l 7 b I DAL DS2012 4 096x9 FIFO Chip FEATURES 3 PIN ASSIGNMENT • First-in, first-out memory-based architecture w c 1* • Flexible 4096 x 9 organization DeC 2 D3C 3 • Low-power HCMOS technology
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DS2012
T-W-35-
2bl413Ã
4096x9
DS2012
DS2009
DS2009
2BL4
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FUH -29A001B
Abstract: DS2013 FUH -29A001F DS2009
Text: DS2013 DALLAS S E M I C O N D U C T O R CORP SOE D • DALLAS ds2013 s e m ic o n d u c to r FEATURES E b l 4 1 3 0 GGGMhlfi fi ■ DAL 8 1 9 2 x 9 F IF O C h ip PIN ASSIGNMENT • First-in, first-out memory-based architecture W [ 1« 28 □ vex: • Flexible 8192 x 9 organization
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DS2013
8192x9
3557HP
DS2013
DS2009
FUH -29A001B
FUH -29A001F
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Untitled
Abstract: No abstract text available
Text: DS2009 DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 FIFO Chip FEATURES PIN DESCRIPTION do •First-in, first-out memory-based architecture •Flexible 512 x 9 organization •Low-power HCMOS technology • Asynchronous and simultaneous read/write • Bidirectional applications
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DS2009
DS2010,
DS2011,
DS2012,
DS2013
120ns
DS2009-N
100mA
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IMS1630
Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Text: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68
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AM2147
AM2148/9
AM2167
AM2168
AM9126
AM99C68
AM99C88
AM99C89
AM67C4501
AM67C4502
IMS1630
HY62256
SGS-Thomson
HITACHI HM6116
DALLAS SEMICONDUCTOR Ds1235
MK4503
hm6116 cross
UPD4361
SSM7188
MK4501
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 FIFO Chip PIN ASSIGNM ENT FEATURES • First-in, first-out memory-based architecture • Flexible 512 x 9 organization • Low-power HCMOS technology • Asynchronous and simultaneous read/write • Bidirectional applications
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DS2009
DS2010,
DS2011,
DS2012,
DS2013
120ns
DS2010
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DS2013
Abstract: DS1666 DS2011D OS16 DS1668 DS1669 DS1669-010 DS1669S DS1000M DS1669-050
Text: DS1668, DS1669, DS1669S DALLAS SEMICONDUCTOR DS1668, DS1669, DS1669S D allastat Electronic Digital Rheostat FEATURES PIN ASSIGNMENT DS1669 • Replaces mechanical variable resistors • Available as the DS1668 with manual interface or the DS1669 integrated circuit
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DS1668,
DS1669,
DS1669S
DS1668
DS1669
DS1668
DS1669
DS2013
DS1666
DS2011D
OS16
DS1669-010
DS1669S
DS1000M
DS1669-050
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ds1669 8 pin
Abstract: DS1669-100 DS1640
Text: DS1668, DS1669, DS1669S DALLAS SEMICONDUCTOR DS1668, DS1669, DS1669S D allastat Electronic Digital Rheostat FEATURES PIN ASSIGNMENT DS1669 • Replaces mechanical variable resistors • Available as the DS1668 with manual interface or the DS1669 integrated circuit
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DS1668,
DS1669,
DS1669S
DS1668
DS1669
DS1668
DS1669
ds1669 8 pin
DS1669-100
DS1640
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ps2009
Abstract: A1536 DS160B DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-80
Text: DS2009 DALLAS SEMICONDUCTOR FEATURES DS2009 512 x 9 FIFO Chip * PIN ASSIGNMENT • First-in, first-out memory-based architecture W E 1# DSC 2 D3C 3 • Flexible 512 x 9 organization D2C 4 D iC 5 • Low-power HCMOS technology • Asynchronous and simultaneous read/write
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DS2009
512x9
Current-35ns,
120ns
ps2009
A1536
DS160B
DS2009-120
DS2009-35
DS2009-50
DS2009-80
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Untitled
Abstract: No abstract text available
Text: DS2009 DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 FIFO Chip FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture W [ 1» D8C 2 D3C 3 D2C 4 D1C 5 25 24 DOC 6 XI c 7 FF C 8 23 • Low-power HCMOS technology • Asynchronous and simultaneous read/write
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DS2009
120ns
DS2010,
DS2011,
DS2012,
DS2013
DS2010
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DS1640
Abstract: No abstract text available
Text: D S 1809 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1809 Dallastat PIN ASSIGNMENT • 64-position linear taper • Two nonvolatile wiper storage options Rh [ 1 8 ] v cc UC £ 2 7 ] DC • Operates from +2.7 to +5.5 volt supplies STR • Standard Resistance values:
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64-position
DS1809
001441fl
DS1640
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rc4565
Abstract: A1536 DS2009 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2013 141S1
Text: V y * DALLAS SEMICONDUCTOR 512 DS2009 9 FIFO Chip PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture W £ 1# D8ÍZ 2 D3C 3 D2C 4 D1C 5 DOH 6 XI c 7 FF C 8 • Flexible 512 x 9 organization • Low-power HCMOS technology • Asynchronous and simultaneous read/write
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DS2009
512x9
DS2010,
DS2011,
DS2012,
DS2013
120ns
DS2010
rc4565
A1536
DS2009-35
DS2009-50
DS2009-65
DS2009-80
141S1
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DS2011
Abstract: DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2010 S2009
Text: DS2009 DS2009 5 1 2 x 9 FIFO Chip DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture • Flexible 512 x 9 organization • Low-power HCMOS technology W C 1« D8d 2 28 □ VCC 27 D D4 D 3C 3 D2Ü 4 26 □ 25 □ 24 □
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DS2009
512x9
DS2010,
DS2011,
DS2012,
DS2013
120ns
DS2010
DS2011
DS2009
DS2009-120
DS2009-35
DS2009-50
DS2009-65
DS2009-80
S2009
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940 eeprom
Abstract: DS1666 DS2011D 100KS DS1000 DS1809 DS1809-010 DS1809-050 DS1809-100 DS1640
Text: D S 1809 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1809 Dallastat PIN ASSIGNMENT • 64-position linear taper • Two nonvolatile wiper storage options Rh [ 1 8 ] v cc UC £ 2 7 ] DC • Operates from +2.7 to +5.5 volt supplies STR • Standard Resistance values:
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DS1809
64-position
DS1809
0B1695
2bl4130
940 eeprom
DS1666
DS2011D
100KS
DS1000
DS1809-010
DS1809-050
DS1809-100
DS1640
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DS2011D
Abstract: 2BL4 DS1000M DS1215S DS1666 DS1000 DS1211 DS1215 DS1234 DS1234S
Text: DALLAS SEMICONDUCTOR DS1234 Conditional Nonvolatile C ontroller Chip FEATURES PIN ASSIGNMENT • Converts CMOS static mem ories RAMs into nonvolatile • Software-controlled write inhibit • Software-controlled battery life battery disconnect extends • U nconditionally write protects when V qc ¡s 0LJt of
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DS1234
16-pin
2bl413G
0G1442Q
DS2011D
2BL4
DS1000M
DS1215S
DS1666
DS1000
DS1211
DS1215
DS1234
DS1234S
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DS1640
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1234 Conditional Nonvolatile C ontroller Chip FEATURES PIN ASSIGNMENT • Converts CMOS static mem ories RAMs into nonvolatile • Software-controlled write inhibit • Software-controlled battery life battery disconnect extends • U nconditionally write protects when V qc ¡s 0LJt of
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DS1234
14-Pin
1234S
16-Pin
001442Q
DS1360S
DS1380S
DS1609S
DS1610S
DS1640
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