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    DALLAS SEMICONDUCTOR D52401 Search Results

    DALLAS SEMICONDUCTOR D52401 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    DALLAS SEMICONDUCTOR D52401

    Abstract: D52401 DALLAS SEMICONDUCTOR Ds12887 ds1232 DS1285 DS12885 DS12887 DS12887A DALLAS SOIC PRODUCT CHANGE Dallas Semiconductor Ds12887A
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: May 23, 1995 Subject: PRODUCT CHANGE NOTICE – D52401 Description: Final Electrical Test Being Qualified in Anam, Philippines Description of Change: Anam, Philippines is being qualified as an alternate site for final electrical testing. All of the test hardware and software will be identical to that used in the Dallas Semiconductor test operations and will


    Original     		D52401 DS1232 DS12885 DS1285 DS12887 DS12887A) DALLAS SEMICONDUCTOR D52401 D52401 DALLAS SEMICONDUCTOR Ds12887 ds1232 DS1285 DS12885 DS12887A DALLAS SOIC PRODUCT CHANGE Dallas Semiconductor Ds12887A PDF