AC Photonics
Abstract: A348 GR 733 S6933 SE-171 telephone
Text: SSD Si strip detector S6933 AC-coupled single-sided Si strip detector for particle tracking S6933 is SSD Si Strip Detector developed for WA89 project of CERN. (See Reference) Features Applications l Large area l Low noise l Low dark current, excellent bias voltage tolerance
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S6933
S6933
SE-171
KSPD1046E01
AC Photonics
A348
GR 733
telephone
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UNITED DETECTOR
Abstract: A342 S6935 SE-171
Text: SSD Si strip detector S6935 AC-coupled double-sided Si strip detector for particle tracking S6935 is SSD Si Strip Detector developed for SDC experiment of SSC project. (See Reference) Features Applications l Large area l Low noise l Low dark current, excellent bias voltage tolerance
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S6935
S6935
SE-171
KSPD1048E01
UNITED DETECTOR
A342
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A368
Abstract: S6936 S6936-01 SE-171
Text: SSD Si strip detector S6936 series AC-coupled double-sided Si strip detector for particle tracking S6936 series is SSD Si Strip Detector developed for DELPHI project of CERN. (See Reference) Features Applications l Large area l Low noise l Low dark current, excellent bias voltage tolerance
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S6936
SE-171
KSPD1049E01
A368
S6936-01
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S6934
Abstract: SE-171
Text: SSD Si strip detector S6934 AC-coupled double-sided Si strip detector for particle tracking Features Applications l Large area l Low noise l Low dark current, excellent bias voltage tolerance l High radiation tolerance l 2-D position detection with high resolution
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S6934
SE-171
KSPD1047E01
S6934
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Hamamatsu
Abstract: telephone transistor 1BW S2461 S2461-01 SE-171
Text: SSD Si strip detector S2461 series DC-coupled single-sided Si strip detector for particle tracking Features Applications l Large area l Low noise l Low dark current, excellent about bias voltage tolerance l S2461-01: PWB mount type • Specifications Parameter
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S2461
S2461-01:
S2461
SE-171
KSPD1045E01
Hamamatsu
telephone
transistor 1BW
S2461-01
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InGaAs photodiode
Abstract: ir photodiode wavelength ingaas mitsubishi photodiode mitsubishi photodiode fu-15pd-m1 ir photodiode wavelength photodiode InGaAs FU-15PD-M1 l1310
Text: MITSUBISHI OPTICAL DEVICES FU-15PD-M1 PD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FU-15PD-M1 is detector module containing highly reliable InGaAs Photodiode for long wavelength band (1~1.6mm). InGaAs photodiode has very low dark current. Th ese modules are used as detector for high-speed
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FU-15PD-M1
FU-15PD-M1
InGaAs photodiode
ir photodiode wavelength ingaas
mitsubishi photodiode
mitsubishi photodiode fu-15pd-m1
ir photodiode wavelength
photodiode InGaAs
l1310
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1055 PC - IR IR Enhanced Photo Detector Spectral Response Features • High Break Down Voltage • Low Dark Current Responsivity A/W 0.70 Applications • Military / Aerospace
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MXP1055
MSC1331
900nm
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3-pin IR sensor
Abstract: PC10-6 TO5 JESD46-C Pacific Silicon Sensor 0E-10 PC106
Text: First Sensor PIN PD Data Sheet Part Description PC10-6 TO Order # 501193 Version 10-05-11 Features Description Application RoHS • 10mm² PIN detector • Low dark current • High shunt resistance • High sensitivity Circular active area PIN photodiode
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PC10-6
2002/95/EC
0E-09
0E-11
0E-10
JESD46C.
3-pin IR sensor
PC10-6 TO5
JESD46-C
Pacific Silicon Sensor
PC106
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Untitled
Abstract: No abstract text available
Text: Laser Analog Detector Part No: PD-05 Specification RESPONSIVITY Wavelength Range 400 - 1000 nm Sensitivity 0 - 1 mW Photodiode Size 2.3 % 2.3mm Bandwidth 4kHz Voltage Output V+ - 0.65V Voltage Output vs. Temperature 200ppm/ºC Dark Error ± 2mV ELECTRICAL
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PD-05
200ppm/Â
650nm
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Untitled
Abstract: No abstract text available
Text: SMD - DETECTOR ARRAY QUADRANT PHOTODIODE FP 20 QP MADE IN GERMANY ALL MEASUREMENTS IN mm Tol.: ±0,10 2/99 Features High Accuracy Excellent Resolution High - Speed Response Ultra Low Dark Current Excellent Response Match High Stability over Time and Temperature
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780nm/50W/10V)
970nm)
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pin photodetector 1300nm
Abstract: photodetector PIN 1300nm 1310nm single mode optic fiber
Text: H Fiber Optic LAN Components 1310nm InGaAs PIN Detector HFD8003-002/XBA FEATURES • High reliabilty passivated planar structure. • High Responsivity • Low Dark Current • Hermetically sealed package installed in industry standard ST housing • -40°C to +85°C operating
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1310nm
HFD8003-002/XBA
pin photodetector 1300nm
photodetector PIN 1300nm
1310nm single mode optic fiber
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Untitled
Abstract: No abstract text available
Text: SMD - DETECTOR ARRAY TWO ELEMENT FOTODIODE FP 20 DP MADE IN GERMANY ALL MEASUREMENTS IN mm Tol.: ±0,10 2/99 Features High Accuracy Excellent Resolution High - Speed Response Ultra Low Dark Current Excellent Response Match High Stability over Time and Temperature
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780nm/50W/10V)
970nm)
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TR-NWT-000870
Abstract: 4022 datasheet GR-468-CORE DRP2EB-43T2 DRP2EC-43T2 optical return
Text: Data sheet PIN Photodetector for C - Band Amplifiers Features • Proven high reliability • InGaAs Planar PIN Detector • Dielectric passivated chip for low dark current This PIN photodetector has been specifically designed for use in the C-Band telecommunications window. It is ideally
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TR-NWT-000870
Abstract: pin photodetector 4022 datasheet DRP2ED-43T2 DRP2EE-43T2 GR-468-CORE bookham pin
Text: Data sheet PIN Photodetector for L-Band Amplifiers Features • Proven high reliability • InGaAs Planar PIN Detector • Dielectric passivated chip for low dark current This PIN photodetector has been specifically designed for use in the C-Band telecommunications window. It is ideally
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Untitled
Abstract: No abstract text available
Text: PGA-600HSX 100 MHz Single Photon Receiver • High Speed Operation to 100 MHz Ultra High Sensitivity InGaAs/InP Detector High Detection Efficiency Low Dark Count Rate Adjustable Blanking Function 1. PRODUCT DESCRIPTION The Princeton Lightwave 100 MHz Single Photon Bench-top Receiver is a complete solution for single
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PGA-600HSX
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiodes G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current
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G8605
SE-171
KIRD1049E03
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transistor C4159
Abstract: G8605-11 C4159 C4159-03 G8605-15 A3179 A3179-01 C1103-04 G8605 G8605-12
Text: InGaAs PIN photodiodes G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current
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G8605
SE-171
KIRD1049E04
transistor C4159
G8605-11
C4159
C4159-03
G8605-15
A3179
A3179-01
C1103-04
G8605-12
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InGaAs photodiode
Abstract: No abstract text available
Text: MITSUBISHI OPTICAL DEVICES FU-15PD-M1 PD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FU-15PD-M1 is detector module containing highly reliable InGaAs Photodiode for long wavelength band (1 ~1.6M>m). InGaAs photodiode has very low dark current. These modules are used as detector for high-speed
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FU-15PD-M1
FU-15PD-M1
InGaAs photodiode
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI OPTICAL DEVICES FU-15PD-M1 PD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FU-15PD-M1 is detector module containing highly reliable InGaAs Photodiode for long wavelength band {1~1.6j.im}. InGaAs photodiode has very low dark current. These modules are used as detector for high-speed
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FU-15PD-M1
FU-15PD-M1
50jim
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hamamatsu 935
Abstract: Hamamatsu S6454 scintillator
Text: Si Photodiode S6454 X-ray detector with scintillator FEATURES • Scintillator: Csl Tl • Low dark current: 1 pA Typ. (Vr=10 mV) • High sensitivity : 0.33 A/W Typ. ( A =565 nm) APPLICATIONS • X-ray analysis The S6454 consists of Si photodiode and a scintillator. When
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S6454
S6454
S-164
KSPD1011E01
hamamatsu 935
Hamamatsu
scintillator
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Untitled
Abstract: No abstract text available
Text: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT FEATURES • Silicon Photodiode in Planar Technology • N-Si Material Anode, Front Contact Cathode, Back Contact • High Reliability • Low Noise • Detector for Low Luminance • No Testable Degradation
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3X10-15
x1013
KOM2045
fl23t
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Untitled
Abstract: No abstract text available
Text: • □010347 3 fl4 ■ MITSUBISHI OPTICAL DEVICES FU-012PD PD MODULE FOR SHORT WAVELENGTH BAND DESCRIPTION FEATURES FU-012PD is detector modules containing highly • High-speed response reliable Si photodiode for short wavelength band (0.5 # L o w dark current (0.01 nA)
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FU-012PD
FU-012PD
780nm
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Untitled
Abstract: No abstract text available
Text: SIEMENS KOM 2059 64-ELEMENT SILICON CIRCULAR ARRAY VERY LOW DARK CURRENT FEATURES Package Dimensions in mm • Silicon Photodiode in Planar Technology • N-Si Material Anode, Front Contact Cathode, Back Contact U- Chip • High Reliability • Low Noise • Detector for Low Luminance
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64-ELEMENT
x1012
KOM2Q59
023b32b
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Untitled
Abstract: No abstract text available
Text: , „ MITSUBISHI OPTICAL DEVICES ans m FU-112PD PD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION F U -1 1 2 P D is FEATURES detector module containing highly • High-speed response (fc = 1.5GHz) reliable InGaAs (PIN photodiode) fo r long wavelength • Low dark current (1n A m ax)
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FU-112PD
1300nm
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