Untitled
Abstract: No abstract text available
Text: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS 2 DESCRIPTION The BDX87C is a silicon Epitaxial-Base NPN
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BDX87C
BDX87C
P003F
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BDX87C
Abstract: No abstract text available
Text: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR • ■ MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ 1 2 DESCRIPTION The BDX87C is a silicon epitaxial-base NPN
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BDX87C
BDX87C
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TRANSISTOR T4
Abstract: NSG2557
Text: NSG2557 ^ M W ^NEW ENGLAND SEMICONDUCTOR 2 0 AMPERE NPN SILICON DARLINGTON POWER TRANSISTOR • • • • • NPN DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors
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NSG2557
NSG2557
8-860-0CREENING
TRANSISTOR T4
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BUT35
Abstract: transistors but35 CM4050
Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS
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b3L75S4
T-35-1?
BUT35
BUT35
transistors but35
CM4050
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PDF
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New England Semiconductor
Abstract: NES6284
Text: NES6284 ^ M W ^NEW ENGLAND SEMICONDUCTOR 2 0 AMPERE NPN SILICON DARLINGTON POWER TRANSISTOR • • • • • NPN DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors
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NES6284
NES6284
New England Semiconductor
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PDF
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BDX67C
Abstract: bdx67b BDX66C
Text: BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching
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BDX67
BDX67A
BDX67B
BDX67C
BDX66,
BDX66A,
BDX66B,
BDX66C.
300ms,
BDX67C
bdx67b
BDX66C
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BDX67C
Abstract: BDX66C Transistor BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66 BDX67 transistor bdx66 TRANSISTOR BDX BDX66C transistor BDX 80 diagram DARLINGTON BDX67B
Text: BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching
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BDX67
BDX67A
BDX67B
BDX67C
BDX66,
BDX66A,
BDX66B,
BDX66C.
300ms,
BDX67C
BDX66C Transistor
BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66
BDX67
transistor bdx66
TRANSISTOR BDX
BDX66C
transistor BDX 80
diagram DARLINGTON
BDX67B
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Motorola AN222A
Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Text: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR
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MJ10023/D
MJ10023
Motorola AN222A
application MJ10023
U430B
motorola 222A
motorola SPS bipolar
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200W TRANSISTOR AUDIO AMPLIFIER
Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.
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BDX69A
BDX69B
BDX69C
BDX68,
BDX68A,
BDX68B,
BDX68C.
300ms,
BDX69"
200W TRANSISTOR AUDIO AMPLIFIER
TRANSISTOR BDX
NPN Transistor VCEO 80V 100V DARLINGTON
200w AUDIO AMPLIFIER
200w audio amplifier ic
200w audio power amplifier
transistor BDX 65
200W POWER TRANSISTORS
BDX 20a
200w power amplifier
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"Darlington Transistors"
Abstract: BDX 20a 200w AUDIO AMPLIFIER TRANSISTOR BDX Darlington 30A Darlington 40A darlington transistor for audio power application npn DARLINGTON 10A NPN Transistor VCEO 80V 100V transistor BDX 65
Text: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.
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BDX69A
BDX69B
BDX69C
BDX68,
BDX68A,
BDX68B,
BDX68C.
300ms,
"Darlington Transistors"
BDX 20a
200w AUDIO AMPLIFIER
TRANSISTOR BDX
Darlington 30A
Darlington 40A
darlington transistor for audio power application
npn DARLINGTON 10A
NPN Transistor VCEO 80V 100V
transistor BDX 65
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32N45
Abstract: BDV65F Darlington NPN Silicon Diode 7277B BDV64F BDV65AF BDV65BF BDV65CF NPN POWER DARLINGTON TRANSISTORS SOT-199
Text: PHILIPS INTERNATIONAL Philips Com ponents T> m 711QÔEL 00433bû Product specification NPN Silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3 NPN epitaxial base transistors in a monolithic Darlington circuit for
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00433bÃ
BDV65F/65AF/65BF/65CF
BDV64F/
64AF/64BF/64CF.
BDV65F
BDV65AF
BDV65BF
BDV65CF
32N45
Darlington NPN Silicon Diode
7277B
BDV64F
NPN POWER DARLINGTON TRANSISTORS
SOT-199
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BDV65AF
Abstract: BDV65CF BDV64F BDV65BF BDV65F current amplifier note darlington BDV66F BC 560 philips NPN POWER DARLINGTON TRANSISTORS
Text: BDV65F/65AF/65BF/65CF D atasheet status Product specif ication date of issue December 1990 NPN silicon Darlington power transistors PINNING - SOT199 DESCRIPTION PIN 1 2 3 NPN epitaxial base transistors in a monolithic Darlington circuit for audio output stages and general
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BDV65F/65AF/65BF/65CF
BDV64F/
64AF/64BF/64CF.
OT199
BDV65F
BDV65AF
BDV65BF
BDV65CF
BDV64F
current amplifier note darlington
BDV66F
BC 560 philips
NPN POWER DARLINGTON TRANSISTORS
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Untitled
Abstract: No abstract text available
Text: BDX69A BDX69A BDX69B BDX69C S EM E LA B NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.
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BDX69A
BDX69B
BDX69C
BDX68,
BDX68A,
BDX68B,
BDX68C.
300ms,
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2N6096
Abstract: 2N6055 2N6055 MOTOROLA N6056 2N6056
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6055 2 N6056* Darlington Com plem entary Silicon Power Transistors "Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON 8 AMPERE
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2N6055
2N6056
N6056*
2N6055
2N6056
2N6096
2N6055 MOTOROLA
N6056
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2N6578
Abstract: 2N6576
Text: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2 N 6 5 76 2 N 6577 2 N 65 78 NPN Silicon Power Darlington Transistors G eneral-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • •
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2N6576/D
2N3055
2N6578
2N6576
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PDF
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Untitled
Abstract: No abstract text available
Text: Optointerrupter Specifications H21B1, H21B2, H21B3 Optointerrupter GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier Module with 1mm Aperture T h e H 2 1B Interrupter Module is a gallium arsenide infrared em itting diode coupled to a silicon Darlington-connected
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H21B1,
H21B2,
H21B3
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PDF
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2929 transistor
Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW
Text: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic
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00073SM
MPSA26
T-29-29
625mW
MPSA25
MPSA62
100/iA,
100mA,
2929 transistor
mpsa82
MPSA45
MPSA55
MPSA63
I0204
625MW
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC8P01 Silicon NPN epitaxial planar type darlington For low frequency output amplification Darlington connection DSC2P01 in MT-2 through hole type package • Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DSC8P01
DSC2P01
DSC8P01
St202
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC8Q01 Silicon NPN epitaxial planar type darlington For low frequency output amplification Darlington connection DSC7Q01 in MT-2 through hole type package • Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DSC8Q01
DSC7Q01
tem202
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PDF
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e5cb
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC8P01 Silicon NPN epitaxial planar type darlington For low frequency output amplification Darlington connection DSC2P01 in MT-2 through hole type package • Features Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DSC8P01
DSC2P01
DSC8P01
e5cb
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PDF
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Untitled
Abstract: No abstract text available
Text: 4DE ]> ROHM CO LTD h7 > v 7 8 2 0 = ]= ^ a O O S T IH Q [ RH 1 2SD1637 $ / I ran sisto rs -7=33-29 2 S D 1 6 3 7 NPN y ' j h > Y-7SV7^$ Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
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2SD1637
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PDF
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D40K2
Abstract: d40k1 D40K D40K3 D41K
Text: VERY HIGH GAIN D40K Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS 2 AMP, 10 WATTS COMPLEMENTARY TO THE D41K SERIES Applications: • • • • • • • • • NPN COLLECTOR Driver Regulator Touch Switch I.C. Driver Capacitor Multiplier Audio Output
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T0-202
O-202
D40K1
D40K2
300ms
D40K
D40K3
D41K
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PDF
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2sd2399
Abstract: No abstract text available
Text: 2SD2399 Transistor, NPN, Darlington Features Dimensions Units : mm • available In TO-220FN package • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated • built-in resistors between base and emitter • 2 mm lower than the T0-220FP
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2SD2399
O-220FN
T0-220FP
2SB1568
-220FN)
2sd2399
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PDF
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silicon power 2GB
Abstract: DG432
Text: BDT63F; BDT63AF ^DTBSBF; BDT63CF 1 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b Q 0 4 3 2 b b «îM *1 H P H I N T -3 3 -2 ^ SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting
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BDT63F;
BDT63AF
BDT63CF
OT186
T62BF
T62CF.
BDT63F
OT186.
BDT63AF
silicon power 2GB
DG432
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PDF
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