MJ10016
Abstract: MJ10015 1N4937
Text: ON Semiconductort MJ10015 MJ10016 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for
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MJ10015
MJ10016
MJ10015
MJ10016
r14525
MJ10015/D
1N4937
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mj10016
Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,
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MJ10015
MJ10016
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2sc1173 equivalent Silicon NPN Power Transistors
bd139 equivalent
equivalent of TIP122
mje340 equivalent
BD435/fw26025a1 equivalent
2N6059 equivalent
2sd526 equivalent
2N3773 equivalent
MJE371 equivalent
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BUT34 equivalent
Abstract: BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high–voltage, high–speed, power
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BUT34
BUT34
204AE
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BUT34 equivalent
BU323A equivalent
2N3055
BU108
2SA1046
BUV22 equivalent
TIP34C equivalent
bc 574 transistor
BU326
BU100
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j10016
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10015 M J10016 SWITCHMODE Series NPN Silicon Power Darlington TVansistors w ith B ase-Em itter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high-voltage,
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MJ10015
MJ10016
j10016
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mj10015
Abstract: mj10016 j10016 mj10 BTA 316 transistor
Text: MOTOROLA Order this document by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS
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MJ10015/D
MJ10015
MJ10016
j10016
mj10
BTA 316 transistor
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MJ10016
Abstract: MJ10015 1N4937 mj10015 motorola
Text: MOTOROLA Order this document by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS
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MJ10015/D*
MJ10015/D
MJ10016
MJ10015
1N4937
mj10015 motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS
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BUT34/D
BUT34
BUT34
97A-05
O-204AE
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BUT34
Abstract: 2N3763 MOTOROLA BUT34 equivalent MR854 diode 1N4934 1N4937 2N3763 2N6339 2N6438 MM3735
Text: MOTOROLA Order this document by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS
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BUT34/D*
BUT34/D
BUT34
2N3763 MOTOROLA
BUT34 equivalent
MR854 diode
1N4934
1N4937
2N3763
2N6339
2N6438
MM3735
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400LC
Abstract: NPN transistor Ic 50A td tr ts tf D66GV D66GV5 D66GV6 D66GV7 high power diode transistor 600 volts.50 amperes transistor 400 volts.50 amperes
Text: H lfîH Q P F F n D66GV5,6,7 NPN POWER DARLINGTON TRANSISTORS 400-500 VOLTS 50 AMP, 125 WATTS The D66GV is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device
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D66GV5
D66GV
400LC
NPN transistor Ic 50A td tr ts tf
D66GV6
D66GV7
high power diode
transistor 600 volts.50 amperes
transistor 400 volts.50 amperes
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but34
Abstract: Motorola Bipolar Power Transistor Data darling
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34 Designer's Data Sheet 50 AMPERES NPN SILICON POWER DARLINQTON TRANSISTOR 850 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors w ith B ase-E m itter Speedup Diode The BUT34 Darlington transistor Is designed for high-voltage, high-speed, power
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BUT34
BUT34
Motorola Bipolar Power Transistor Data
darling
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HIGH POWER DIODE
Abstract: "Power Diode" 500V 20A 132 1506 diode D66DWT273 D66EW1 EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor
Text: HIGH VOLTAGE D 66D W T2T3 D66EW1,2,3 NPN POWER DARLINGTON VcER = 600-700 VOLTS VcEV = 800-900 VOLTS 50 AMP, 167 WATTS TRANSISTORS The D66DW/EW is a high voltage NPN high current power Darlington especially designed for applications requiring high blocking voltage capability such as: 460VAC line motor
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D66DWT273
D66EW1
D66DW/EW
460VAC
D66DW
-D66DW
HIGH POWER DIODE
"Power Diode" 500V 20A
132 1506 diode
EW NPN
D66DW3
NPN POWER DARLINGTON TRANSISTORS
EW1 transistor
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MJE1100
Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70
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MJ4200
MJ4000
MJD6039
MJD6039-1
2SD1520
2SD1414
2SD1933
MJE1100
MJ4001
SDN201
BD263B
Motorola transistors MJE1102
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D40CI
Abstract: TQ-202 D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734
Text: VERY HIGH GAIN D40C Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS .5 AMP, 6.25 WATTS Designed for driver, regulator, touch switch, I.C. driver, audio output, relay substitute, oscillator, servo-arnplifier, and capacitor multiplier applications. NPN COLLECTOR
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TQ-202
TQ-202
D40CI
D40C7
D40C1
800 watts audio amp
D40C
D40C4
16 amp npn darlington power transistors
30734
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NS11032
Abstract: T0204
Text: NS11032 ^ IP NEW ENGLAND SEMICONDUCTOR NPN SILICON DARLINGTON POWER TRANSISTORS • • • • • • 50 AMPERE NPN DARLINGTON POWER TRANSISTOR G EN ER A L PURPO SE A M PLIFIE R LO W FR EQ U EN C Y SW ITCH ING HIGH DC C U R RE N T GAIN M O NO LITH IC CO NSTRU CTIO N
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NS11032
T0-204AE
NS11032
T0204
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D40K2
Abstract: d40k1 D40K D40K3 D41K
Text: VERY HIGH GAIN D40K Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS 2 AMP, 10 WATTS COMPLEMENTARY TO THE D41K SERIES Applications: • • • • • • • • • NPN COLLECTOR Driver Regulator Touch Switch I.C. Driver Capacitor Multiplier Audio Output
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T0-202
O-202
D40K1
D40K2
300ms
D40K
D40K3
D41K
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2SC1645S
Abstract: No abstract text available
Text: 2SC1645S Transistor, NPN, Darlington Features Dimensions Units : mm • available in SPT (SC-72) package • Darlington connection provides high dc current gain (hFE), typically hFE = 50 000 at VCE = 5 V, lc = 100 mA • built-in resistor of approximately 4 k£2
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2SC1645S
SC-72)
2SA830S
2SC1645S
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2N6725
Abstract: 2N6724 DSA003749
Text: NPN SILICON PLANAR MEDIUM DARLINGTON POWER TRANSISTORS Lx&l ISSUE 1- MARCH 94 FEATURES * 50 volt VCED * Gain of 15kat * Ptot= 1 Watt Ic = 0.5 Amp ABSOLUTE MAXIMUM IJ9&&KL RATINGS. SYMBOL PARAMETER Collector-Base Emitter-Base ‘CBO 50 —— ‘CEO 40 ——
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15kat
2N6725
2N6724
500mA,
2N6725
2N6724
DSA003749
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D44E1
Abstract: D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133
Text: VERY HIGH GAIN D44E Series NPN POWER DARLINGTON TRANSISTORS 40-80 VOLTS 10 AMP, 50 WATTS COMPLEMENTARY TO THE D45E SERIES Applications: NPN COLLECTOR • Solenoid Driver • Lamp Driver • Relay Substitute • Switching Regulator CASE STYLE TO -220A B DIMENSIONS ARE IN INCHES AND M ILLIM ETERS
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04Sai4|
D44E1
D44E3
D44E2
d44e3 to-220
TL 272
D44E
D45E
130133
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box53a
Abstract: bot63 218m motorola mj1200 BOW93A 2S0558 2S0405 BOT65 B089 TO221AB
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max tf Max (8) (8) Toper Max (Oe) Package Style NPN Darlington Transistors, (Cont'd) 5 10 15 20 25 30 35 40 45 50 B0897A BOX53A
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B0897A
BOX53A
2S01572
2S01176
2S01219
2S01262
2S01277
2S01321
2S01327
B0267
bot63
218m
motorola mj1200
BOW93A
2S0558
2S0405
BOT65
B089
TO221AB
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tab ic
Abstract: No abstract text available
Text: NTE267 Silicon NPN Transistor High Gain Darlington Power Amp, Switch Features: D Forward Current Transfer Ratio: hFE = 90,000 min. D Free–Air Power Dissipation: 1.33W @ TA = +50°C D Hard Solder Mountdown Applications: D Driver D Regulator D Audio Output
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NTE267
tab ic
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NPN transistor Ic 50A td tr ts tf
Abstract: transistor MJ 122 NPN Power Darlington Modules NPN Darlington transistor TF PTC Ptc transistor
Text: Series PTC 2400, PTC 2401 NPN Silicon Power Darlington Transistors 50 Amperes • 600 Volts FEATURES • • • • Isolated Collectors High Voltage Rating - 600 Volts Overload Short Circuit Rating Glass Passivated Die to Provide Excellent High Temperature Stability
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NTE267
Abstract: tab ic
Text: NTE267 Silicon NPN Transistor High Gain Darlington Power Amp, Switch Features: D Forward Current Transfer Ratio: hFE = 90,000 min. D Free−Air Power Dissipation: 1.33W @ TA = +50°C D Hard Solder Mountdown Applications: D Driver D Regulator D Audio Output
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NTE267
300sec
NTE267
tab ic
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MJ10
Abstract: No abstract text available
Text: SFT10015 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 50 AMP NPN DARLINGTON TRANSISTOR DESIGNER’S DATA SHEET 400 VOLTS Part Number / Ordering Information 1/
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SFT10015
200oC
SFT10015
MJ10015.
TR0126B
MJ10
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 2N6724 2N6725 ISSUE 1 - MARCH 94_ FEATURES * 50 Volt V,CEO Gain of 15k at lc = 0.5 Amp P,o«=1 Watt E E-Une T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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2N6724
2N6725
200mA,
500mA,
300ns.
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