DIP18
Abstract: LB1741 mm 105k BUT 11 Transistor
Text: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.
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ENN4094
LB1741
LB1741
500mA
18-pin
3007B-DIP18
LB1741]
51min
DIP18
mm 105k
BUT 11 Transistor
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IC 4094
Abstract: LB1741 DIP18
Text: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.
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ENN4094
LB1741
LB1741
500mA
18-pin
3007B-DIP18
LB1741]
51min
IC 4094
DIP18
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IC 4094
Abstract: n042 transistor 3007A EN4094 3007A-DIP18 LB1741 darlington-pair
Text: Ordering number : EN 4094 Monolithic Digital 1C LB1741 No.4094 Octal NPN Darlington-pair Transistor Array PINOUT OVERVIEW The LB 1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.
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LB1741
LB1741
18-pin
IC 4094
n042
transistor 3007A
EN4094
3007A-DIP18
darlington-pair
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transistor 3007A
Abstract: No abstract text available
Text: 7 cn ? Q 7 b DOISDST Ibfi O rd e rin g n u m b e r: E N 4 0 9 4 LB1741 No.4094 J Monolithic Digital IC SAKYO i Octal NPN Darlington-pair _ Transistor Array PINOUT OVERVIEW The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it
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LB1741
LB1741
18-pin
DIP20H
DIP16F
FP30S
transistor 3007A
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Untitled
Abstract: No abstract text available
Text: ULN2003 YOUDA INTEGRATED CIRCUIT HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY—ULN2003 DESCRIPTION Darlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. FEATURES ULN2003 has a 2.7kΩ series base resistor for each darlington pair, allowing operation directly with TTL or
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ULN2003
ULN2003
500mA
ULN200370â
200mA
250mA
300mA
350mA
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IC 4094
Abstract: EN4094 TRANSISTOR ARRAY transistor 3007A Monolithic Transistor Pair NPN Monolithic Transistor Pair 3007A-DIP18 LB1741
Text: SANYO SEMICONDUCTOR O rd erin g n u m b e r: E N 4 0 9 4 CORP L3E ]> 7 ci c1 7 D 7 b I 0015M0b 04Ô «TSAJ Monolithic Digital IC i No. 4094 SA W O i LB1741 Octal NPN Darlington-pair Transistor Array OVERVIEW PINOUT The LB 1741 is a high-current Darlington-pair transistor
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EN4094
c17D7b
0012MÃ
LB1741
18-pin
IC 4094
TRANSISTOR ARRAY
transistor 3007A
Monolithic Transistor Pair
NPN Monolithic Transistor Pair
3007A-DIP18
LB1741
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EN4094
Abstract: No abstract text available
Text: SA NY O S E M I C O N D U C T O R CORP Ordering number: EN4094 b3E D • 7n7D7b D Q l E M ô b 04Ô * T S A J I Monolithic Digital 1C SÄWO LB1741 No. 4094 Octal NPN Darlington-pair Transistor Array PINOUT OVERVIEW The LB1741 is a high-current Darlington-pair transistor
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EN4094
LB1741
LB1741
18-pin
EN4094
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PDF
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2sd2011
Abstract: 2SB1333 transistor 2SD 2sd darlington
Text: 2SD2011 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • damper diode incorporated • built-in resistors between base and emitter • complementary pair with 2SB1333
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2SD2011
2SB1333
2SD2011,
2sd2011
transistor 2SD
2sd darlington
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113 marking code PNP transistor
Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
Text: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3
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2SB852K
SC-59)
2SB852K;
2SB852K
2SB852K,
113 marking code PNP transistor
113 marking code transistor
T146
transistor PNP
transistor 2SB
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ULN2003A application
Abstract: uln2003a ULN2002A
Text: ULN2002A/ ULN2003A/ ULN2004A HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS Description Pin Assignments The ULN2002A ,ULN2003A and ULN2004A are high voltage, high current Darlington arrays each containing seven open collector ADVANCE INFORMATION common emitter pairs. Each pair is rated at 500mA. Suppression
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ULN2002A/
ULN2003A/
ULN2004A
ULN2002A
ULN2003A
ULN2004A
500mA.
4-25V
ULN2003A
ULN2003A application
ULN2002A
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B1316
Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
Text: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •
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2SB1316F5
SC-63)
B1316
2SB1316F5
DIODE B1316
B-1316
PACKAGE MARKING f5
transistor 2SB
B131-6
DIODE 2FL
2fl marking diode
2fl marking
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D1980
Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
Text: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated
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2SD1980F5
SC-63)
D1980
2SD1980
K35kQ
R2se300Q
2SD1980F5
2sd darlington
MARKING CODE f5
diode marking code 15h
marking 7T transistor
TRANSISTOR CD 263
2SD1980
damper diode darlington npn
transistor t f5 j
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Untitled
Abstract: No abstract text available
Text: ULN2002A/ ULN2003A/ ULN2004A HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS Description Pin Assignments The ULN2002A, ULN2003A and ULN2004A are high voltage, high current Darlington arrays each containing seven open collector ADVANCE INFORMATION common emitter pairs. Each pair is rated at 500mA. Suppression
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ULN2002A/
ULN2003A/
ULN2004A
ULN2002A,
ULN2003A
ULN2004A
500mA.
ULN2002A
4-25V
ULN2003A
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D1980
Abstract: diode marking F5
Text: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated
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2SD1980F5
SC-63)
D1980
2SD1980
2SD1980F5
2SD1980F5,
diode marking F5
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113 marking code PNP transistor
Abstract: 2sb darlington Darlington pair pnp
Text: 2SB852K Transistor, PNP, Darlington pair Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; U * where ★ is hFE code 1 9 *0 2 0.8 Min. 00*0 095 Darlington connection provides high DC current gain (hFE)
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2SB852K
SC-59)
2SB852K;
2SB852K
2SB852K,
113 marking code PNP transistor
2sb darlington
Darlington pair pnp
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2SA transistor
Abstract: high current Darlington pair IC
Text: 2SA830S Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in SPT (SC-72) package • Darlington connection provides high gain, typically hFE = 20000 at lc = -100 mA 2SA830S (SPT) • built-in resistance of approximately 4 k il between base and emitter
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2SA830S
SC-72)
2SC1645S
2SA830S
2SA transistor
high current Darlington pair IC
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Darlington pair IC high current
Abstract: darlington pair power transistor schmitt trigger IC
Text: IS652A IS653A MATCHED EMITTER DETECTOR PAIR PHOTO DARLINGTON OUTPUT PACKAGES CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS652A IS653A 2.84 0.45 DESCRIPTION The IS652A Gallium Arsenide Infrared Emitting Diode and the IS653A(NPN Silicon Photo Darlington
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IS652A
IS653A
IS652A
IS653A
Darlington pair IC high current
darlington pair power transistor
schmitt trigger IC
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 05GM33Ö G D 0 3 7 S CJ T ■ T-91-01 PROCESS TPM Process TPM NPN Darlington Transistor Process TPM is a double-diffused silicon epitaxial planar NPN Darlington pair. ABSOLUTE MAXIMUM RATINGS Collector Current, lc .: . 500mA
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050M33A
D037SCJ
T-91-01
500mA
05Q433Ã
DQ0373Q
T-91-01
-IJ933
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TRANSISTOR ba 751
Abstract: TRANSISTOR 751
Text: ALLEGRO MICROSYSTEMS INC ^3 D • D50433fl GDDSbST 3 ■ T - PRO CESS BNB 9 Process BNB NPN Darlington Transistor Process BNB is a double-diffused epitaxial planar NPN silicon Darlington pair. It is designed for use in high-gain, high-current amplifier circuits. Its comple
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D50M33fl
1000mA
0S0433Ã
0003bb0
TRANSISTOR ba 751
TRANSISTOR 751
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transistor CR NPN
Abstract: 2sd transistors equivalent
Text: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W * , where ★ is hFE code • Darlington connection provides high hFE = 50,000 (typically) at 100 mA • built-in resistor of approximately 4 k£2
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2SD1383K
SC-59)
2SD1383K;
2SD1383K
Coll229
2SD1383K,
transistor CR NPN
2sd transistors equivalent
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2SD1834
Abstract: No abstract text available
Text: 2SD1834 Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1834; D E*, where ★ is hFE code • Darlington connection provides high DC current gain (hFE), typically hFE = 15,000 at VCE = 3 V, lc = 500 mA
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2SD1834
OT-89,
SC-62)
2SD1834;
A/500
2SD1834
2SD1834,
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Darlington pair IC
Abstract: Darlington pair IC high current darlington pair power transistor schmitt trigger IC
Text: IS652A IS653A MATCHED EMITTER DETECTOR PAIR PHOTO DARLINGTON OUTPUT ISOCOM PACKAGES LTD CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS652A IS653A 2.84 0.45 DESCRIPTION The IS652A Gallium Arsenide Infrared Emitting Diode and the IS653A(NPN Silicon Photo Darlington
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IS652A
IS653A
IS652A
IS653A
Darlington pair IC
Darlington pair IC high current
darlington pair power transistor
schmitt trigger IC
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PDF
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2903 D
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • ÜSDM33Ö DQQBbTì M ■ ALGR T-91-01 PROCESS JEA Process JE A NPN High-Voltage Darlington Transistor Process J E A is a double-diffused epitaxial planar silicon Darlington pair. It is designed for use in highvoltage, high-gain amplifier circuits.
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5DM33Ã
T-91-01
500mA
T-91-Ã
2903 D
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transistor a13
Abstract: transistor AS 431 A13 transistor
Text: ALLEGRO MICROSYSTEMS INC T3 D • 0S0433A 00[l3fc.bl 1 ■ T - 9 J-O I PROCESS BOB Process BOB PNP Darlington Transistor Process BOB is a PN P silicon epitaxial planar Darlington pair. It is designed for use in high-current, high-gain amplifier applications. Its NPN comple
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0S0433Ã
1000mA
transistor a13
transistor AS 431
A13 transistor
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