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    DARLINGTON TRANSISTOR TO 92 Search Results

    DARLINGTON TRANSISTOR TO 92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON TRANSISTOR TO 92 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KSP13

    Abstract: NPN Transistor 5V DARLINGTON transistor ksp13 "Darlington Transistor" transistor darlington npn Darlington transistor dj005b 625mW npn darlington TO92 ksp-13
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP13/14 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=30V • Collector Dissipation:PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		KSP13/14 625mW KSP13 KSP14 KSP13 NPN Transistor 5V DARLINGTON transistor ksp13 "Darlington Transistor" transistor darlington npn Darlington transistor dj005b 625mW npn darlington TO92 ksp-13 PDF

    MPSA13

    Abstract: PT 10000
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		MPSA13 QW-R201-016 PT 10000 PDF

    Darlington transistor

    Abstract: MPSA13 transistor 625
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		MPSA13 100ms QW-R201-016 Darlington transistor transistor 625 PDF

    transistor 100n

    Abstract: KSP13 100N transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP13A4 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCES =30V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage CoHector-Emitter Voltage


    OCR Scan     		KSP13A4 625mW KSP13 KSP14 KSP14 100mA, KSP13/14 transistor 100n 100N transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP12 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=20V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Emitter Voltage Emitter-Base Voltage


    Original     		KSP12 625mW PDF

    KSP13

    Abstract: transistor ksp13
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP13/14 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=30V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		KSP13/14 625mW KSP13 KSP14 KSP14 KSP13 transistor ksp13 PDF

    MPSA63

    Abstract: Transistor MPSA63
    Text: MPSA63 PNP SILICON DARLINGTON TRANSISTOR TO-92 MPSA63 is PNP silicon darlington transistor designed for preamplifier input applications. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VCES 30V Collector-Base Voltage VCBO 30V Emitter-Base Voltage VE BO


    OCR Scan     		MPSA63 MPSA63 300mA 625mW 100nA 100mA 300us, Transistor MPSA63 PDF

    NPN Transistor 5V DARLINGTON

    Abstract: Darlington transistor to 92 KSP25 KSP27 KSP26 vce max 100 ic max 100MA NPN "Darlington Transistor"
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V • Collector Dissipation:PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Rating


    Original     		KSP25/26/27 KSP25: KSP26: KSP27: 625mW KSP25 KSP26 KSP27 NPN Transistor 5V DARLINGTON Darlington transistor to 92 KSP25 KSP27 KSP26 vce max 100 ic max 100MA NPN "Darlington Transistor" PDF

    NPN Transistor 5V DARLINGTON

    Abstract: MPS-A27
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA27 DARLINGTON TRANSISTOR - • C ollector-Em itter Voltage: VCEs=60V • Collector Dissipation: Pc max =625mW to -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcES Vebo lc


    OCR Scan     		MPSA27 625mW 100mA, NPN Transistor 5V DARLINGTON MPS-A27 PDF

    KSP75

    Abstract: KSP76 KSP77
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP75/76/77 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=KSP75: 40V KSP76: 50V KSP77: 60V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Rating


    Original     		KSP75/76/77 KSP75: KSP76: KSP77: 625mW KSP75 KSP76 KSP77 KSP75 KSP76 KSP77 PDF

    MPSA14

    Abstract: TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON
    Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		MPSA14 QW-R201-054 TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON PDF

    Darlington transistor to 92

    Abstract: MPS712 power transistor pnp darlington
    Text: DATA SHEET MPS712 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS712 is a silicon PNP Darlington Transistor, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MAXIMUM RATINGS TA=25°C


    Original     		MPS712 MPS712 800mA, 800mA 100mA 500mA Darlington transistor to 92 power transistor pnp darlington PDF

    TRANSISTOR 077

    Abstract: MPSA113 MPSA11
    Text: UTC MPSA113 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA113 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		MPSA113 QW-R201-042 TRANSISTOR 077 MPSA11 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP62/63/64 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCES=KSP62: 20V KSP63/64: 30V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage


    Original     		KSP62/63/64 KSP62: KSP63/64: 625mW KSP62 KSP63/64 PDF

    TO-92 transistor

    Abstract: KSP12
    Text: KSP12 KSP12 Darlington Transistor • Collector-Emitter Voltage: VCES=20V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KSP12 625mW 625mW KSP12TA KSP12BU TO-92 transistor KSP12 PDF

    transistor c 616

    Abstract: ksp25
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: V ces=KSP25: 40V KSP26:50V KSP27:60V • Collector Dissipation:Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) C haracteristic Collector-Base Voltage


    OCR Scan     		KSP25/26/27 KSP25: KSP26 KSP27 625mW KSP25 KSP26 KSP25 transistor c 616 PDF

    KSP75

    Abstract: KSP76 KSP77
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP75/76/77 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: V CES = KSP75: 40V KSP76: 50V KSP77: 60V • C ollector D issipation: Pe max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic


    OCR Scan     		KSP75tf6J77 KSP75: KSP76: KSP77: 625mW KSP75 KSP76 KSP77 100/iA, KSP75 KSP76 KSP77 PDF

    Darlington transistor to 92

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP75/76/77 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=KSP75: 40V KSP76: 50V KSP77: 60V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage


    Original     		KSP75/76/77 KSP75: KSP76: KSP77: 625mW KSP75 KSP76 KSP77 Darlington transistor to 92 PDF

    KSP12

    Abstract: No abstract text available
    Text: KSP12 KSP12 Darlington Transistor • Collector-Emitter Voltage: VCES=20V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KSP12 625mW KSP12 PDF

    KSP26

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage


    Original     		KSP25/26/27 KSP25: KSP26: KSP27: 625mW KSP25 KSP26 KSP27 KSP26 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SPMICONDUCTOR INC 14E S MPSA62 D | 7^4115 00073b? 3 J PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: V ces=20V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		00073b? MPSA62 625mW PDF

    c 458 c transistor

    Abstract: KSP12 transistor c 458
    Text: KSP12 KSP12 Darlington Transistor • Collector-Emitter Voltage: VCES=20V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KSP12 625mW c 458 c transistor KSP12 transistor c 458 PDF

    NPN Transistor 5V DARLINGTON

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V Ces = KSP25: 40V KSP26: 50V KSP27: 60V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (T8=25°C) Characteristic Collector Base Voltage


    OCR Scan     		KSP25/26/27 KSP25: KSP26: KSP27: 625mW KSP25 KSP26 KSP27 NPN Transistor 5V DARLINGTON PDF

    KSP12

    Abstract: transistor 605
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP12 DARLINGTON TRANSISTOR TO-92 • CoHector-Emitter Voltage: V C e s “ 2 0 V • Collector DissipatkxrPc max «025mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) C haracteristic CoHector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		KSP12 025mW KSP12 transistor 605 PDF