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    DATA SHEET GERMANIUM DIODE Search Results

    DATA SHEET GERMANIUM DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DATA SHEET GERMANIUM DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BGT24MTR12

    Abstract: 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC

    BGT24MTR11

    Abstract: B7HF200 sun resistor 400 mohm 24 GHz transceiver VQFN32-9 IFX VQFN32
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF BGT24MTR11 VQFN32-9 BGT24MTR11 VQFN32-9-PO VQFN32-9 B7HF200 sun resistor 400 mohm 24 GHz transceiver IFX VQFN32

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF BGT24MTR11 VQFN32-9 BGT24MTR11 VQFN32-9-PO VQFN32-9

    T0825

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO T0825

    smd marking list infineon

    Abstract: No abstract text available
    Text: BGA925L6 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 2.0, 2011-09-16 Preliminary RF & Protection Devices Edition 2011-09-16 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved.


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    PDF BGA925L6 smd marking list infineon

    Germanium Transistor

    Abstract: BFP842
    Text: BFP842ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2013-04-11 RF & Protection Devices Edition 2013-04-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


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    PDF BFP842ESD OT343 OT343-PO OT343-FP BFP842ESD: OT323-TP Germanium Transistor BFP842

    BGA628L7

    Abstract: XPOSYS 628L C166 JESD22-A114 NF50
    Text: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.


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    PDF BGA628L7 BGA628L7 XPOSYS 628L C166 JESD22-A114 NF50

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.2, 2014-07-15 RF & Protection Devices Edition 2014-07-15 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    PDF BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9

    Untitled

    Abstract: No abstract text available
    Text: BGA231L7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 3.0, 2011-04-20 RF & Protection Devices Edition 2011-04-20 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    PDF BGA231L7

    BGA915

    Abstract: No abstract text available
    Text: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    PDF BGA915N7 BGA915

    Untitled

    Abstract: No abstract text available
    Text: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF BFP840FESD BFP840FESD:

    Untitled

    Abstract: No abstract text available
    Text: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    PDF BGA915N7

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    PDF BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9

    Untitled

    Abstract: No abstract text available
    Text: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


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    PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP

    Untitled

    Abstract: No abstract text available
    Text: BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 3.0, 2014-01-24 RF & Protection Devices Edition 2014-01-24 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG


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    PDF BGA524N6

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO DIODE NDL5171P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^100 ¿an GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems.


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    PDF NDL5171P GI-50/125) NDL5171P NDL5171P1 NDL5171P2 b427525

    gi diode

    Abstract: diode gi GERMANIUM nec
    Text: DATA SHEET PHOTO DIODE NDL5151P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^50 /¿m GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5151P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems, and features small dark current and high speed response.


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    PDF NDL5151P GI-50/125) NDL5151P GI-50/125 NDL5151P1 NDL5151P2 b427525 gi diode diode gi GERMANIUM nec

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC b2E D • ¡3427525 GG3fiGfl3 235 ■ NECE DATA SHEET NEC PHOTO DIODE NDL5105P, NDL5105P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COMMUNICATIONS 4 > 3 0 mty \ GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5105P and NDL5105P1 are Germanium Avalanche Photo Diodes w ith singlemode fiber, especially designed fo r detectors


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    PDF NDL5105P, NDL5105P1 NDL5105P NDL5105P1 NDL5106PI SI-10/125 NDL5100 NDL5100C NDL5100P NDL5104P

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO DIODE NDL5131P Series 1 300 nm OPTICAL FIBER COMMUNICATIONS ^30 fim GERMANIUM AVALANCHE PHOTO DIODE MODULE WITH SMF DESCRIPTION NDL5131P Series is a Germanium avalanche photo diode module with singlemode fiber. It is designed for long wavelength transmission systems, and features small dark current and high speed response due to 30 //m detecting


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    PDF NDL5131P SM-9/125) NDL5131P SM-9/125 NDL5131P1 NDL5131P2 SM-9/125 4E752S

    dl520

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission


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    PDF bM27SES NDL5102 L427SES NDL5102 NDL5102C DL5200 NDL5100 NDL5100C NDL5100P* dl520

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC b 2 E ]> • ^ 5 7 5 2 3 oo3fiotfl T 5 b HINECE DATA SHEET NEC PHOTO DIODE N D L 5 1 0 0 ELECTRON DEVíCE 1 300 nm OPTICAL FIBER COMM UNICATIONS 4> 100 //m GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5100 is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission


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    PDF NDL5100 NDL5200 NDL5100C NDL5102C NDL5100P* NDL5102P*

    NDL5200

    Abstract: 2c ti apd LD236
    Text: PRELIMINARY DATA SHEET PHOTO DIODE MODULE NDL5171P, NDL5171P1, NDL5171P2 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 100 ¡im GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P, NDL5171P1 and NDL5171P2 are G erm anium avalanche photo diode m odules w ith m ultim ode fiber.


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    PDF NDL5171P, NDL5171P1, NDL5171P2 NDL5171P1 NDL5171P2 NDL5171PC, NDL5171P1C NDL5171P2C. GI-50/125) NDL5200 2c ti apd LD236

    Untitled

    Abstract: No abstract text available
    Text: B K C INTERNATIONAL 3QE D • HTTTflB G00G32fci 4 ■ ' “T - O i - O “] BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO* 508 681-0392 ENGINEERING DATA SHEET TYPE 1N100A GOLD BONDED, GERMANIUM, DIODE ABSOLUTE MAXIMUM RATINGS


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    PDF G00G32fci 1N100A 250mA 400mA 10mW/10 --50uA

    diode piv 100 500ma

    Abstract: G1594 gold bonded germanium diode
    Text: B K C INTERNATIONAL 30É D • llTTTfiB DQDDBS1 S ■ '~pO\-§-} BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 BKC ENGINEERING DATA SHEET FOR TYPE NUMBER G 1594 GOLD BONDED GERMANIUM DIODE ABSOLUTE MAXIMUM RATINGS


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    PDF G1594 500mA diode piv 100 500ma G1594 gold bonded germanium diode