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    DATA SHEET TRANSISTOR 2N7002 Search Results

    DATA SHEET TRANSISTOR 2N7002 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DATA SHEET TRANSISTOR 2N7002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    702 TRANSISTOR smd

    Abstract: TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE dk 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 2N7002 PHILIPS MARKING TRANSISTOR SMD 702 G 702 transistor smd code SMD MARKING CODE TRANSISTOR 501 2N7002 SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA


    Original     		PDF 2N7002 SC13b SCA54 137107/00/01/pp12 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE dk 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 2N7002 PHILIPS MARKING TRANSISTOR SMD 702 G 702 transistor smd code SMD MARKING CODE TRANSISTOR 501 2N7002 SOT23

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 115 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-


    Original     		PDF 2N7002 OT-23

    transistor marking s72

    Abstract: transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23
    Text: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 200 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-


    Original     		PDF 2N7002 OT-23 transistor marking s72 transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23

    2N7002KA

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


    Original     		PDF 2N7002KA 2N7002KA

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 01 — 21 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


    Original     		PDF 2N7002KA 2N7002KA

    2N7002KA

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 02 — 25 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


    Original     		PDF 2N7002KA O-236AB) 003aac036 2N7002KA

    2N7002E

    Abstract: 2N7002-E3
    Text: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002E mbb076 2N7002E 2N7002-E3

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002E mbb076 2N7002E

    03aa03

    Abstract: 2N7002-T1 2N7002T
    Text: 2N7002T N-channel TrenchMOS FET Rev. 01 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002T mbb076 2N7002T 03aa03 2N7002-T1

    03aa03

    Abstract: 2N7002-1 2N70021
    Text: 2N7002 N-channel TrenchMOS FET Rev. 05 — 15 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002 mbb076 2N7002 03aa03 2N7002-1 2N70021

    2n7002-1

    Abstract: 2N7002 PHILIPS PHILIPS 2N7002 MBB076 2N7002* application 2N7002 2N7002-03 HZG336 2n70020 2N70021
    Text: 2N7002 N-channel TrenchMOS FET Rev. 06 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002 mbb076 2N7002 2n7002-1 2N7002 PHILIPS PHILIPS 2N7002 MBB076 2N7002* application 2N7002-03 HZG336 2n70020 2N70021

    2N7002F

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 02 — 9 May 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002F mbb076 2N7002F

    2N7002F

    Abstract: 2N7002F_2
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002F mbb076 2N7002F 2N7002F_2

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002E mbb076 2N7002E 771-2N7002E-T/R

    Untitled

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002F mbb076 2N7002F

    2N7002BK

    Abstract: 771-2N7002BK215 trench relay
    Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF 2N7002BK O-236AB) AEC-Q101 771-2N7002BK215 2N7002BK trench relay

    smd code marking WV

    Abstract: nxp p mosfet 2N7002P
    Text: 2N7002P 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF 2N7002P O-236AB) AEC-Q101 2N7002P smd code marking WV nxp p mosfet

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF 2N7002BK O-236AB) AEC-Q101

    2N7002BK

    Abstract: smd code marking WV
    Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF 2N7002BK O-236AB) AEC-Q101 2N7002BK smd code marking WV

    03aa03

    Abstract: 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application
    Text: 2N7002 N-channel TrenchMOS FET Rev. 04 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002 mbb076 03aa03 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application

    1.4944

    Abstract: 2N7002E
    Text: 2N7002E N-channel TrenchMOS FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible


    Original     		PDF 2N7002E mbb076 1.4944 2N7002E

    ld smd transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Data sheet Product specification status 2N7002 N-channel vertical D-MOS transistor date of issue April 1995 FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION


    OCR Scan     		PDF 2N7002 ld smd transistor

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors N bbSB'iai 0024136 4TT ■ I A P X AUER Data sheet status Product specification P H IL IP S /D IS C R E T E b?E ]> 2N7002 N-channel vertical D-MOS transistor date of issue April 1991 FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,


    OCR Scan     		PDF 2N7002 OT23bbS3T31 MCB703

    smd transistor TO4

    Abstract: SMD Transistor 7e SMD SOT23 7E to4 smd smd to4 transistor DI 763 2N7002 phi ic87 2N7002 UBB073
    Text: • Philips Semiconductors Product specification date of issue April 1991 FEATUR ES • QDsmaa htt « apx N AUER PHILIPS/DISCRETE Data sheet status bbSB'm fc.7E D 2N7002 N-channei vertical D-MOS transistor QUICK R E F E R E N C E DATA Direct interface to C -M O S , TTL,


    OCR Scan     		PDF 2N7002 bb53T31 MCB702 smd transistor TO4 SMD Transistor 7e SMD SOT23 7E to4 smd smd to4 transistor DI 763 2N7002 phi ic87 2N7002 UBB073