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    DB198 Search Results

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    DB198 Price and Stock

    Carling Technologies VDB1980B-AEC00-000

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    Master Electronics VDB1980B-AEC00-000
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    • 10 $13.06
    • 100 $8.11
    • 1000 $5.45
    • 10000 $5.32
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    Sager VDB1980B-AEC00-000
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    DB198 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fast recovery diode 600v 5A

    Abstract: TFF5N60 DB-198 0421L
    Text: TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω 1 = Gate 2 = Drain 3 = Source 1 General Description 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220FP DB-100 fast recovery diode 600v 5A TFF5N60 DB-198 0421L

    ba3414

    Abstract: BD 804
    Text: 1 1234455674 8 31998ABC81BD9E87FADDE8 8 8 183E1E7A8E9DDB11 1 1 1 1 187673E8BAD1E1 CD31 EF88BB81 1 1 1 31 341 1 1 3!3 341  D3%31 D!D1 !1  1 1 ! 1 $)31 $3&331


    Original     		PDF 31998ABC81BD9E87F 183E1E 673E8B 145/2A DB198 D3143 789A2 89A2E A1811A ba3414 BD 804

    Untitled

    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state


    Original     		PDF O-220FP DB-100