Untitled
Abstract: No abstract text available
Text: DBA250C Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)40 V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)12
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DBA250C
Voltage200
Current10u
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TA-2807
Abstract: D138 DBA250 DBA250C DBA250G 41000
Text: 注文コード No. N 2 1 4 5 C DBA250 No. N 2 1 4 5 C 41000 半導体ニューズ No.2145B とさしかえてください。 DBA250 特長 シリコン拡散接合形 25.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・ガラスパッシベーションによる高信頼製品。
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DBA250
2145B
DBA250C
DBA250G
TA-2807
ID01187
D138
DBA250
DBA250C
DBA250G
41000
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TA-2807
Abstract: D138 DBA250 DBA250C DBA250G
Text: 注文コード No. N 2 1 4 5 C DBA250 No. N 2 1 4 5 C 41000 半導体ニューズ No.2145B とさしかえてください。 DBA250 特長 シリコン拡散接合形 25.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・ガラスパッシベーションによる高信頼製品。
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DBA250
2145B
DBA250C
DBA250G
TA-2807
ID01187
D138
DBA250
DBA250C
DBA250G
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HA 3089
Abstract: No abstract text available
Text: Ordering number : ENN2145C DBA250 Diffused Junction Silicon Diode DBA250 25.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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ENN2145C
DBA250
DBA250]
DBA250C
DBA250G
HA 3089
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DBA250
Abstract: DBA250C DBA250G
Text: Ordering number : ENN2145C DBA250 Diffused Junction Silicon Diode DBA250 25.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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ENN2145C
DBA250
DBA250]
DBA250
DBA250C
DBA250G
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DBA250
Abstract: DBA250C DBA250G MM1162
Text: Ordering number:EN2145B DBA250 Silicon Diffused Junction Type 25.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · High reliability attained by glass passivation. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=25.0A.
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EN2145B
DBA250
DBA250]
DBA250C
DBA250G
DBA250
DBA250C
DBA250G
MM1162
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2145C DBA250 Diffused Junction Silicon Diode DBA250 25.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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ENN2145C
DBA250
DBA250]
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C DBB10C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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PDF
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D4P213
DBA10E
DBA20B
DBA20C
i15-0Â
25MIN
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
DBB10C
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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PDF
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D4P213
DBA10E
DBA20B
DBA20C
25MAX
24MIN
25M1N
25MIN
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
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DBA40C
Abstract: 416B 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C 638C
Text: 120 - - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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PDF
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D4P213
DBA10E
DBA20B
DBA20C
DBB08B
DBB08C
DBB08E
DBB08G
DBB10B
DBB10C
DBA40C
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
638C
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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PDF
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D4P213
DBA10E
DBA20B
DBA20C
DBB08B
DBB08C
DBB08E
DBB08G
DBB10B
DBB10C
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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PDF
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D4P213
DBA10E
DBA20B
DBA20C
DBB08B
DBB08C
DBB08E
DBB08G
DBB10B
DBB10C
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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PDF
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D4P213
DBA10E
DBA20B
DBA20C
DBB08B
DBB08C
DBB08E
DBB08G
DBB10B
DBB10C
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
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416B
Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Text: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C
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OCR Scan
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PDF
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D4P213
DBA10E
DBA20B
DBA20C
DBB08B
DBB08C
DBB08E
DBB08G
DBB10B
DBB10C
416B
436B
DBA10E
DBA20E
DBA30B
DBA30C
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DBA250
Abstract: DBA250C DBA250G N-100 SANYO
Text: Ordering number : EN 2145B B B p fT No.21456 £jj32// jj // //// DBA250 Silicon Diffused Junction Type 25.OA Single-Phase Bridge Rectifier Features • Plastic molded structure. • High reliability attained by glass passivation. • Peak reverse voltage : Vrm = 200 to 600V.
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OCR Scan
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PDF
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EN2145B
DBA250
DBA250C
DBA250G
DBA250
N-100 SANYO
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