SPDT FETs
Abstract: High Isolation Reflective SPDT Switch High Isolation Reflective Switch 5v
Text: GaAs MMIC SPDT FET Switch Chip DC-6 GHz With Independent Bias Control EHAlpha AS006R2-00, AS006M2-00 Features • Individual Bias Control of Series and Shunt FETs ■ Broadband DC to 6 GHz ■ High Isolation ■ Non-Reflective or Reflective Short or Open
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AS006R2-00,
AS006M2-00
AS006R2-00
AS006M2-00
SPDT FETs
High Isolation Reflective SPDT Switch
High Isolation Reflective Switch 5v
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch Chip DC-6 GHz With Independent Bias Control AS006R2-00, AS006M2-00 Features • Individual Bias Control of Series and Shunt FETs ■ Broadband DC to 6 G H z ■ High Isolation ■ N on-Reflective or Reflective Short or Open ■
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AS006R2-00,
AS006M2-00
AS006R2-00
AS006M2-00
FET4R2-11
AS006L1-00
AS006L1--
AS006L1
AS006L2-00
AS006L2-01
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AS00R2-00
Abstract: GaAs IC SPDT
Text: GaAs IC SPDT Switch Chip DC–6 GHz With Independent Bias Control AS006R2-00, AS006M2-00 Features • Independent Bias Control of Series and Shunt FETs ■ Non-Reflective or Reflective Option Chip Outline 0.045 1.14 mm 0.041 (1.04 mm) 0.033 (0.83 mm) ■ Excellent Intermodulation and
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AS006R2-00,
AS006M2-00
AS006R2-00
AS006M2-00
8/01A
AS00R2-00
GaAs IC SPDT
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Chip DC-6 GHz With Independent Bias Control EBAlpha AS006R2-00, AS006M2-00 Features Chip Outline • Independent Bias Control of Series and Shunt FETs CM 00 IT CM CO to in to Ò Ö ■ Non-Reflective or Reflective Option ■ Excellent Intermodulation and
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AS006R2-00,
AS006M2-00
AS006R2-00
AS006M2-00
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Chip DC-6 GHz With Independent Bias Control ESAlpha A S 006R 2-00, A S 006M 2-00 Chip Outline Features • Independent Bias Control of Series and Shunt FETs C\J hCO LO C\J CO Is«. LO T— Is«. LO o tO LO to o O to Iso 1to CO o 1.143 —
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AS006R2-00
AS006M2-00
AS006M2-00
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Chip DC-6 GHz With Independent Bias Control ESAlpha AS006R2-00, AS006M2-00 F eat ur e s • Independent Bias Control of Series and Shunt FETs Chip Outline CM h* t - h- co lo c\j co lo d o .O O r-»- lo un to co Is»; o d o i— d o co
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AS006R2-00,
AS006M2-00
AS006R2-00
AS006M2-00
3/99A
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3906 PNP TRANSISTOR
Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET
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AN-0002
3906 PNP TRANSISTOR
irlml6401tr
LMK316BJ475KL
MAX881
AN-0002
MAX881R
RFS1003
RFS1006
AN0002
"Dual PNP Transistor" temperature compensation
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AS406R2-01
Abstract: AS406R2-10
Text: GaAs IC SPDT Switch Reflective DC–6 GHz AS406R2-01, AS406R2-10 Features -01 • Independent Bias Control 0.220 5.59 mm 0.210 (5.33 mm) ■ Reflective, Short 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP. ■ Capable of Meeting MIL-STD
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AS406R2-01,
AS406R2-10
AS406R2-01
AS406R2-10
9/99A
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AS406R2-01
Abstract: AS406R2-10
Text: GaAs IC SPDT Switch Reflective DC–6 GHz AS406R2-01, AS406R2-10 Features -01 • Independent Bias Control 0.220 5.59 mm 0.210 (5.33 mm) ■ Reflective, Short 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP. ■ Capable of Meeting MIL-STD
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AS406R2-01,
AS406R2-10
AS406R2-01
AS406R2-10
9/99A
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DC bias of FET
Abstract: Tecdia DC bias of gaas FET GaAs FETs bias tee fet rf high power Excelics packaging
Text: Recommendations for the Handling, Mounting and Biasing of High Power GaAs FETs A. Handling Precautions: All GaAs FETs are sensitive to electrostatic discharge. It is Excelics policy that all GaAs FETs will be shipped in electrostatic protective packaging and the user must pay careful attention to the
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DM74SL04
Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
Text: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs
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S2079
SW-109
SWD-119
SW-394
SW-399
OT-26
SW-205
SW-206
SW-215
SW-216
DM74SL04
IC DM74LS04
SW109
SW SPDT
fairchild m539
SW-3951
ttl and cmos digital ic
sw-419
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Drivers for GaAs FET Switches and Digital Attenuators
Abstract: SW SPDT rf attenuator 349 SW-109 ttl and cmos digital ic DC bias of gaas FET IC DM74LS04 DM74SL04 motorola diode 8296 SW-437
Text: Drivers for GaAs FET Switches and Digital Attenuators S2079 V4 Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application
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S2079
SW-109
SWD-119
Drivers for GaAs FET Switches and Digital Attenuators
SW SPDT
rf attenuator 349
ttl and cmos digital ic
DC bias of gaas FET
IC DM74LS04
DM74SL04
motorola diode 8296
SW-437
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GaAs SPDT IC FET
Abstract: SW-239TR MESFET Application
Text: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon able that operate to 3 GH z as analog attenuators, digital attenuators
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ATC100A
AT-210/AT-220
GaAs SPDT IC FET
SW-239TR
MESFET Application
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DC bias of gaas FET
Abstract: Application Notes ALPHA INDUSTRIES DC bias of FET AT002N3-12
Text: GaAs 30 dB MMIC FET Voltage Variable Öl Alpha Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, Non-Reflective
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AT002N3-12
AT002N3-12
DC bias of gaas FET
Application Notes ALPHA INDUSTRIES
DC bias of FET
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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Untitled
Abstract: No abstract text available
Text: GaAs 30 dB MMIC FET Voltage Variable Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, N on-R eflective
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AT002N3-12
AT002N3-12
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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high frequency transistor ga as fet
Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .
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ATP-1054,
5963-2025E
5966-0779E
high frequency transistor ga as fet
ATP-1054
bipolar transistor s-parameter
high power FET transistor s-parameters
Transistor s-parameter
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Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the
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AN1023
sam13-106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice
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high power FET transistor s-parameters
Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .
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ATP-1054,
5963-2025E
5966-0779E
high power FET transistor s-parameters
high frequency transistor ga as fet
ATP-1054
bipolar transistor ghz s-parameter
NF50
RF Transistor s-parameter
vacuum tube amplifier
DC bias of gaas FET
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NE800296
Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
24-Hour
NE800296
diode deg avalanche zo 150 63
NE72089
ne8002
SK3448
universal jfet biasing curve graph
gunn diode ghz s-parameter
NE800196
impatt diode
NE800495-4
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NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
NE800296
NE800196
NE24406
diode deg avalanche zo 150 63
SK3448
ne8002
NE868199
shockley diode
NE800495-4
shockley diode application
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Untitled
Abstract: No abstract text available
Text: HEXAWAVE HWP1960-8C Hexawave, Inc. GaAs FET Power Module Features • Applicable for PACS and PCS • Frequency 1930 ~ 1990 MHz • High Linearity • 50 ohm Input/Output Impedances • Guaranteed Stability & Ruggedness Maximum Ratings Tc=25 °c Parameters
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HWP1960-8C
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M3508-20
Abstract: No abstract text available
Text: HEXAWAVS HW947-1B Hexawave, Inc. 900MHz UHF GaAs FET Power Module Features Applicable for AMPS Cellular Phone Frequency : 824 ~ 849 MHz High Efficiency 50 ohm Input/Output Impedances Guaranteed Stability' & Ruggedness Maximum Ratings Tc=25 °c Parameters
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HW947-1B
900MHz
M3508-20
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Untitled
Abstract: No abstract text available
Text: TGS8422-SCC SP4T FET Switch DC to 18-GHz Frequency Range 2.5-dB Insertion Loss at Midband 37-dB Isolation at Midband Typical Input Power of 19-dBm at 1-dB Gain Compression Typical SWR of 1.6:1 2,286 x 2,057 x 0,150 mm 0.090 x 0.081 x 0.006 in. PHOTO ENLARGEMENT
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TGS8422-SCC
18-GHz
37-dB
19-dBm
18-GHz.
47-dB
13-dB.
GMNA002.
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