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    DC TO 3 GHZ LNA AMPLIFIER APPLICATION CIRCUITS Search Results

    DC TO 3 GHZ LNA AMPLIFIER APPLICATION CIRCUITS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    DC TO 3 GHZ LNA AMPLIFIER APPLICATION CIRCUITS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SA2420

    Abstract: SA2421 SA2421DH TSSOP24 LNA Mixer 2.4 GHz 2.45Ghz oscillator circuit
    Text: INTEGRATED CIRCUITS SA2421 Low voltage RF transceiver — 2.45GHz Objective specification Philips Semiconductors 1998 Aug 24 Philips Semiconductors Objective specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2421 PIN CONFIGURATION The SA2421 transceiver is a combined low-noise amplifier, receive


    Original     		PDF SA2421 45GHz SA2421 45GHz SA2420 SA2421DH TSSOP24 LNA Mixer 2.4 GHz 2.45Ghz oscillator circuit

    dc to 3 ghz lna application circuits

    Abstract: MGA-645T6 E4440A dc to 3 ghz lna amplifier application circuits FR4 Prepreg for RF 06 layer PCB
    Text: Low Noise High Linearity Amplifier with Integrated Bypass Switch for 2.3 to 2.7 GHz Application Using MGA-645T6 Application Note 5312 Introduction This application note describes the design of application circuits for the LNA from 2.3 to 2.4 GHz for WiMax,


    Original     		PDF MGA-645T6 11b/g) MGA-645T6 -30dBm -20dBm AV01-0678EN AV02-0476EN dc to 3 ghz lna application circuits E4440A dc to 3 ghz lna amplifier application circuits FR4 Prepreg for RF 06 layer PCB

    rf transceiver 2.4 ghz

    Abstract: SA2420 SA2420DH TSSOP24 LNA Mixer VCO 2.4 GHz 2.45Ghz 10dbm oscillator 2sa2420 2.45Ghz oscillator circuit
    Text: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive


    Original     		PDF SA2420 45GHz SA2420 45GHz rf transceiver 2.4 ghz SA2420DH TSSOP24 LNA Mixer VCO 2.4 GHz 2.45Ghz 10dbm oscillator 2sa2420 2.45Ghz oscillator circuit

    SA2420

    Abstract: SA2421 SA2421DH TSSOP24 Transceiver 20 GHz block Diagram
    Text: INTEGRATED CIRCUITS SA2421 2.45 GHz low voltage RF transceiver Product specification Supersedes data of 2000 Feb 11 Philips Semiconductors 2000 Mar 13 Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION


    Original     		PDF SA2421 SA2421 SA2420 SA2421DH TSSOP24 Transceiver 20 GHz block Diagram

    rf transceiver 2.4 ghz

    Abstract: 2.45GHZ balun "RF Transceiver" 2.2 ghz bandpass filter chip 5Ghz lna transistor datasheet TSSOP24 SA2420 SA2420DH 2.45Ghz oscillator circuit
    Text: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive


    Original     		PDF SA2420 45GHz SA2420 45GHz rf transceiver 2.4 ghz 2.45GHZ balun "RF Transceiver" 2.2 ghz bandpass filter chip 5Ghz lna transistor datasheet TSSOP24 SA2420DH 2.45Ghz oscillator circuit

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS SA2421 2.45 GHz low voltage RF transceiver Preliminary specification Philips Semiconductors 2000 Feb 11 Philips Semiconductors Preliminary specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION The SA2421 transceiver is a combined low–noise amplifier, receive


    Original     		PDF SA2421 SA2421

    350-400MHZ

    Abstract: SA2420 SA2420DH TSSOP24 2SA2420 2.45Ghz 10dbm oscillator 2.45Ghz oscillator circuit
    Text: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive


    Original     		PDF SA2420 45GHz SA2420 45GHz 350-400MHZ SA2420DH TSSOP24 2SA2420 2.45Ghz 10dbm oscillator 2.45Ghz oscillator circuit

    AT 2313

    Abstract: BFP640 BFP620 applications note dc to 3 ghz lna application circuits BFP620 MTA100 BFP640 noise figure amplifier TRANSISTOR 12 GHZ dc to 3 ghz lna amplifier application circuits lna schematic diagram
    Text: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 3 0 T h e S i G e B F P 6 4 0 a s a 2 .4 G H z L o w N o i s e Amplifier LNA R F & P r o t e c ti o n D e v i c e s Edition 2007-11-07 Published by Infineon Technologies AG


    Original     		PDF BFP640 AT 2313 BFP620 applications note dc to 3 ghz lna application circuits BFP620 MTA100 BFP640 noise figure amplifier TRANSISTOR 12 GHZ dc to 3 ghz lna amplifier application circuits lna schematic diagram

    RF Transistor s-parameter

    Abstract: T7024 complete circuit diagram for a PA amplifier schematics for a PA amplifier HP-VFQFP-N20 DIODE N20 RF MODULE CIRCUIT DIAGRAM dect
    Text: Bluetooth Front End T7024 Design Guide 12.01 1 Information contained in this paper is intended to provide a product description. Such description does not in any way constitute assured characteristics in the legal sense, nor do those design hints provide information regarding delivery


    Original     		PDF T7024 PSSO20 HP-VFQFP-N20 HP-VFQFP-N20 RF Transistor s-parameter T7024 complete circuit diagram for a PA amplifier schematics for a PA amplifier DIODE N20 RF MODULE CIRCUIT DIAGRAM dect

    mcp01

    Abstract: MABT01 09326 dc to 3 ghz lna application circuits RF Switch qfn RF front end
    Text: MCP01 2.4 to 2.5 GHz RF Front End IC - Description The MCP01 contains a power amplifier PA , a low noise amplifier (LNA), and a SPDT switch. It is a 16-pins IC with 3x3mm2-QFN package and includes all the RF circuits that are needed between transceiver and antenna. Besides, the RF input and output impedance are 50Ω matched. Lots of


    Original     		PDF MCP01 MCP01 16-pins MABT01, MABT01 0x107 March/2008 09326 dc to 3 ghz lna application circuits RF Switch qfn RF front end

    uln 2008

    Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A
    Text: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740 uln 2008 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A

    free transistor

    Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
    Text: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package


    Original     		PDF BFR740L3RH free transistor uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100

    uln 2008

    Abstract: 825000 BFP740F Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types
    Text: Application Note, Rev. 1.2, November 2008 Application Note No. 168 BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 microsecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740F uln 2008 825000 Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types

    k 513

    Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
    Text: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF AN179 BFP620 BFP640F AN182 k 513 MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179

    Untitled

    Abstract: No abstract text available
    Text: Bluetooth Front End T7024 Design Guide General Information The T7024 is a single supply front end designed especially for applications in the 2.4 GHz to 2.5 GHz frequency band. The front end consists of a Power Amplifier PA , a Low-Noise Amplifier (LNA) and a switch driver for a PIN diode antenna switch.


    Original     		PDF T7024 T7024 4549Câ

    Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

    Abstract: 180NM IBM
    Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE


    Original     		PDF 11b/g Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN 180NM IBM

    BFP620 applications note

    Abstract: AN057 BFP620 TRANSISTOR 37518 AN060 BCR400R BCR400W BFP540 LQG10A MS11
    Text: A pp l ic a t io n N o t e, R e v . 3. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 6 0 A H i g h T h i r d- O r d e r I nt e r c e pt L o w N o i s e A m p l i f i e r f o r 1 9 0 0 M H z A p pl i c a t i o n U s i n g t h e S i l i c o n Germanium BFP620 Transistor


    Original     		PDF BFP620 TECHN-01-09 AN060 AN060 BFT620 BFP620 applications note AN057 TRANSISTOR 37518 BCR400R BCR400W BFP540 LQG10A MS11

    CGY2106TS

    Abstract: Philips npo 0805 SSOP16 CGY21 CGY2106
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2106TS High dynamic range dual LNA MMIC Preliminary specification File under Integrated Circuits, IC17 2000 Aug 28 Philips Semiconductors Preliminary specification High dynamic range dual LNA MMIC CGY2106TS FEATURES GENERAL DESCRIPTION


    Original     		PDF CGY2106TS CGY2106TS 403506/01/pp16 Philips npo 0805 SSOP16 CGY21 CGY2106

    LNA Mixer VCO 2.4 GHz

    Abstract: 800-1200MHZ SA620 SA620DK SA7025 philips radio 900MHz
    Text: INTEGRATED CIRCUITS SA620 Low voltage LNA, mixer and VCO – 1GHz Product data Supersedes data of 1993 Dec 15 Philips Semiconductors 2004 Dec 14 Philips Semiconductors Product data 1GHz low voltage LNA, mixer and VCO DESCRIPTION SA620 PIN CONFIGURATION The SA620 is a combined RF amplifier, VCO with tracking bandpass


    Original     		PDF SA620 SA620 800-1200MHz. 900MHz LNA Mixer VCO 2.4 GHz 800-1200MHZ SA620DK SA7025 philips radio 900MHz

    BFP620 applications note

    Abstract: BFP540 AN057 BCR400R BCR400W BFP620 LQG10A MS10 MS11 MS12
    Text: Applications Note No. 060 Silicon Discretes A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using the Silicon-Germanium BFP620 Transistor • Gain = 14.7 dB • Very Low Noise Figure = 1.05 dB • High Input 3rd-Order Intercept Point = +10 dBm


    Original     		PDF BFP620 BFP620 lowMay-2000 LQP10A LQG10A 05-Oct-2000 AN060 BFP620 applications note BFP540 AN057 BCR400R BCR400W MS10 MS11 MS12

    michael hiebel fundamentals of vector analysis

    Abstract: NRP-Z21 AN220 BFP740FESD MTA-100 rf detector diode BFP740F C166 TSLP-2-17 FSEM30
    Text: BF P7 4 0 F ES D BF P7 4 0 F ES D E SD - Ha r d e n e d Si Ge : C Ul tr a L o w No i s e R F Tra n s i s to r wi t h 2 k V ES D Ra ti n g i n 5 – 6 G Hz L NA Ap p l i c a ti o n . 1 7 d B G a i n , 1 .4 d B No i s e Fi g u r e & < 1 0 0 n s T u rn - O n / T u rn - O ff


    Original     		PDF 20dBm AN220, BFP740FESD BFP740FESD AN220 michael hiebel fundamentals of vector analysis NRP-Z21 AN220 MTA-100 rf detector diode BFP740F C166 TSLP-2-17 FSEM30

    FSEM30

    Abstract: BFP740 AN219 michael hiebel fundamentals of vector analysis NRP-Z21 sot344 BFP740ESD BFP740FESD C166 MTA-100
    Text: BF P7 4 0 E SD BF P7 4 0 E SD E S D- H a rd e n e d S i Ge :C Ul tr a L o w No i s e R F Tra n s i s to r wi t h 2 k V ES D Ra ti n g i n 5 – 6 G Hz L NA Ap p l i c a ti o n . 1 5 d B G a i n , 1 .3 d B No i s e Fi g u r e & < 1 0 0 n s T u rn - O n / T u rn - O ff


    Original     		PDF 20dBm AN219, BFP740ESD BFP740ESD AN219 FSEM30 BFP740 AN219 michael hiebel fundamentals of vector analysis NRP-Z21 sot344 BFP740FESD C166 MTA-100

    7804 regulator

    Abstract: AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885
    Text: 4 GHz Television Receive Only LNB Design Application Note A007 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 AN-A001: AN-S005: 5091-8825E 7804 regulator AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885

    LNA at 15 GHZ with Ultra high sensitivity

    Abstract: MSOP-10 bluetooth transceiver hmc-28 2.4 ghz transmitter radio controlled with seven HBT MMIC Amplifier sot-86 HMC308 HMC310MS8G HMC315 HMC318MS8G
    Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION AUTUMN INSIDE. *12 NEW 2000 AMPLIFIERS Hittite HBT Amplifier Product Line Announced! RELEASED!. HBT MMICs Combine High Performance Design Expertise With InGaP GaAs Technology. Hittite has introduced five new InGaP HBT amplifiers


    Original     		PDF HMC313 LNA at 15 GHZ with Ultra high sensitivity MSOP-10 bluetooth transceiver hmc-28 2.4 ghz transmitter radio controlled with seven HBT MMIC Amplifier sot-86 HMC308 HMC310MS8G HMC315 HMC318MS8G