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    Dynex Semiconductor

    Dynex Semiconductor DCR960G18

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    DCR960G18 Datasheets Context Search

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    DCR960G18

    Abstract: No abstract text available
    Text: DCR960G18 Phase Control Thyristor DS6027-1 April 2011 LN28238 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 1800 V 960 A 14000 A 1000 V/µs 200 A/µs * Higher dV/dt selections available APPLICATIONS


    Original     		DCR960G18 DS6027-1 LN28238) DCR960G16 DCR960G14 DCR960G12 DCR960G18 PDF

    DCR960G18

    Abstract: No abstract text available
    Text: DCR960G18 Phase Control Thyristor DS6027-1 April 2011 LN28238 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 1800 V 960 A 14000 A 1000 V/µs 200 A/µs * Higher dV/dt selections available APPLICATIONS


    Original     		DCR960G18 DS6027-1 LN28238) DCR960G16 DCR960G14 DCR960G12 DCR960G18 PDF

    DCR370T

    Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches


    Original     		4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34 PDF