M14C04
Abstract: No abstract text available
Text: M14C04 DD M14C04 Die Description PRODUCT • WAFER SIZE M14C04 152 mm 6 inches ■ DIE IDENTIFICATION M14C04KA_R ■ DIE SIZE (X x Y) 1465 x 1585 µm ■ SCRIBE LINE 101.6 x 101.6 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)
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M14C04
M14C04
M14C04KA
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APT10026L2FLL
Abstract: DSA003654
Text: APT10026L2FLL 1000V 38A 0.260Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10026L2FLL
O-264
O-264
APT100Package
APT10026L2FLL
DSA003654
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APT8020B2LL
Abstract: APT8020LLL
Text: APT8020B2LL APT8020LLL 800V 38A 0.200Ω B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2LL
APT8020LLL
O-264
O-264
O-247
APT8020B2LL
APT8020LLL
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Untitled
Abstract: No abstract text available
Text: APT8020B2LL APT8020LLL 0.200Ω 800V 38A B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2LL
APT8020LLL
O-264
O-264
O-247
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APT8020lllg
Abstract: APT8020B2LL
Text: APT8020B2LL G APT8020LLL(G) 800V 38A 0.200Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. B2LL POWER MOS 7 R MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching
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APT8020B2LL
APT8020LLL
O-247
APT8020lllg
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Untitled
Abstract: No abstract text available
Text: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2FLL
APT8020LFLL
O-264
O-247
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APT8020B2FLL
Abstract: APT8020LFLL
Text: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2FLL
APT8020LFLL
O-264
O-264
O-247
APT8020B2FLL
APT8020LFLL
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STE38N60
Abstract: STH12N60
Text: STE38N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE38N60 600 V < 0.15 Ω 38 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH12N60 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER
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STE38N60
STH12N60
E81743)
STE38N60
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STE38NB50F
Abstract: No abstract text available
Text: STE38NB50F N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH MOSFET TYPE STE38NB50F • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.14 Ω 38 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING
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STE38NB50F
STE38NB50F
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STE38NB50
Abstract: No abstract text available
Text: STE38NB50 N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH MOSFET TYPE STE38NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 38 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STE38NB50
STE38NB50
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E38NB50
Abstract: STE38NB50 e38n
Text: STE38NB50 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE ST E38NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 38 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STE38NB50
E38NB50
E38NB50
STE38NB50
e38n
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STW38NB20
Abstract: No abstract text available
Text: STW38NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STW38NB20 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.065 Ω 38 A TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING
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STW38NB20
STW38NB20
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940-009, 941-009, 942-009
Abstract: dda 009
Text: Sav-Con connector savers PATT 105 and PATT 602 940-009, 941-009, 942-009 Bayonet Coupling 940-009 GENERAL DUTY, 941-009 ENVIRONMENTAL AND 942-009 HIGH RELIABILITY How To Order Sample Part Number 94 L Series 94 Class 0 = General Duty 1 = Environmental 2 = High Reliability
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Xicor 28C010
Abstract: 28C010-200 28C010-120 28C010-150 XM28C010-25 28C010-250 28C010H-120 28C010H-150 28C010H-200 28C010H-250
Text: - 152- 2 8 C O 1 O m & ít * m sm cc> X 4 A « TAAC max ns TCAC max (ns) TOH tax (ns) TOE max (ns) TOD max (ns) VDD (V) I DD/STANDBY (ibA) VIL max (V) 1 VIH min (V) & ii / m £ Ci tax (pF) V O L / I VOL max (V/mA) mæ V O H / I VOH min (V/mA) Co max (pF)
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28C010-120
28C010-150
28C010-200
28C010-250
28C010H-120
28C0/2
28C010
Pin32
Xicor 28C010
XM28C010-25
28C010H-150
28C010H-200
28C010H-250
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Untitled
Abstract: No abstract text available
Text: KS88C9408 MICROCONTROLLER ELECTRICAL DATA ELECTRICAL DATA Table 15-1. Absolute Maximum Ratings T a = 25°C Parameter Symbol Conditions Rating Unit Supply voltage VDD - - 0 . 3 to + 7 .0 V Input voltage V|N - —0.3 to V d d + 0.3 V O utput voltage Vo - —0.3 to V d d + 0.3
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KS88C9408
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT li PD16732A, 16732B 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES The n PD16732A, 16732B are a source driver for TFT-LCDs capable of dealing with displays with 64-gray scales. Data input is based on digital input configured as 6 bits by 6 dots (2 pixels), which can realize a full-color display of
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PD16732A,
16732B
384-OUTPUT
64-GRAY
16732B
S13972EJ1V0DS00
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3052a
Abstract: boe vfd LC6512 LC866648 LC866216A
Text: SANYO SEMICONDUC TOR CORP b3E D ? ^ ? Q 7 h GDlOñOE TfiT • TSAJ Continued from previous page Packtg* > s sacks CycJs une iWM - t o « M u n i. ■ ■ ¡■ ■ IllH ■■■■■ m ■ ■ ■ ■ ■ ■ - 32 768 x 8 512 x 8 128 1.0 10 mA LC86E5032V
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LC86E5032V
LC86P5032V
LC866008A*
LC866012A*
LC866016A*
LC86602QA*
LC866024A*
LC866032A*
LC86E6032*
LC86P6032*
3052a
boe vfd
LC6512
LC866648
LC866216A
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cxd1135
Abstract: SM5841BS CXD1125 Sony CXD1135 cxd1130 SONY cxd1130 SM5841AS ad1865 yamaha ic YM3623
Text: rupe NIPPON PRECISION CIRCUITS INC. S M 5 8 4 1 A /B Audio Multi-function Digital Filter OVERVIEW The SM5841A/B are digital filters for digital audio, fabricated in Molybdenum-gate CMOS. The SM5841A/B feature selectable digital deemphasis, digital attenuation and soft mute functions. The serial data format uses
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SM5841A/B
SM5841A/B
16-bit
20-bit
22-pin
69-tap
13-tap
NC9251CE
cxd1135
SM5841BS
CXD1125
Sony CXD1135
cxd1130
SONY cxd1130
SM5841AS
ad1865
yamaha ic
YM3623
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NJU6463
Abstract: 2 line 16character lcd display 1090
Text: IMJ U 6 4- 6 3 PRELIMINARY 16-CHARACTER 3 - L I N E DOT M A T R I X LCD CONTROLLER • GENERAL DESCRIPTION .The NJU6463 is a Dot Matrix LCD controller driver for 16-character 3-line with icon display in single chip. It contains voltage converter and regulator, bleeder
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16-CHARACTER
NJU6463
0DDb27b
5-608---------------m
2 line 16character lcd display
1090
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Untitled
Abstract: No abstract text available
Text: T iF N W A/L-Tfoi M<U€ 512 Megabit CMOS 3.3V EDO DRAM High Density Memory Device 256 M egabit CMOS 3.3V EDO DRAM 128 M egabit c m o s 3.3 V e d o d r a m D A T , / m i c r o s y s t e m s Ls&WSWS PRELIMINARY DESCRIPTION: The / H - D s m n s series is a family of interchangeable memory
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30A196-00
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34992
Abstract: SSC5100 F232-10 pinpad 78568
Text: S-n 0 S SYSTEMS INC 5bE D • 7 cï 3 S tl D c1 G ODI Sb b SSC5000 'Ib? M S MO Series 0.8u HIGH SPEED CMOS STANDARD CELL SERIES° 7 ■ DESCRIPTION The S-MOS SSC5000 standard cell series is a 0.8 micron drawn family of standard cell circuits. It is manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal N-well CMOS process. It Is comprised of 20
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SSC5000
SSC5000
SSC50LQ
C-115
34992
SSC5100
F232-10
pinpad
78568
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IRV60
Abstract: 5MO 165 IRV200W IRH150W IRH300W IRV300W IRV500 IRH200 IRV500L IRH100
Text: = j g g r .= = - P C N R ESISTO R S= Compliance n HIGH POWER TYPE METAL CLAD WIRE-WOUND RESISTORS m IRH, IRV Shape & Dimensions mm A AA IR H 6 0 -IR H 1 5 0 x‘! 10 (IRH60:13) * VH » '& g L2 °'81^ / g \ \ A 2 5 l 12.5 = 15 10_ / IR H 2 0 0 -IR H 5 0 0
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IRH60
IRH60L
IRH60W
IRV60L
IRV60W
IRH80
IRH80L
IRH80W
IRV80L
IRV80W
IRV60
5MO 165
IRV200W
IRH150W
IRH300W
IRV300W
IRV500
IRH200
IRV500L
IRH100
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Untitled
Abstract: No abstract text available
Text: IRFP450A A dvanced Power MOSEET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■
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IRFP450A
G03b332
0G3b333
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Untitled
Abstract: No abstract text available
Text: IRFP250A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 32 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V
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IRFP250A
G03b332
0G3b333
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