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    Untitled

    Abstract: No abstract text available
    Text: 3 3 6 8 6 0 2 SOL ITRON DEVICES INC bl DE P a B ^ O a DD0131S □ J~_ ’7 > 3 3 y 3 S o l i t r o n Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS Voltage, Collector to Base VCB0 NO.: 2N 53Q 3 TYPE: NPN F.PI BASE .CASE: TO—3 .


    OCR Scan     		PDF DD0131S

    Untitled

    Abstract: No abstract text available
    Text: 54E ]> • MOSEL D0D1310 =551 « M O V I NOSEL-VITELIC MS6264A r 8K x 8 High Speed CMOS Static RAM Preliminary FEATURES DESCRIPTION • High-speed - 20/25/30 ns The M OSEL M S6264A is a 65,536-bit static random access memory organized as 8,192 words by 8 bits


    OCR Scan     		PDF D0D1310 MS6264A S6264A 536-bit 28-pin MS6264A-20PC P28-1 MS6264A-20NC P28-2

    Untitled

    Abstract: No abstract text available
    Text: NN51V4260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM NPN a DESCRIPTION The N N 51V4260A series is a high perform ance C M O S D ynam ic Random Access M em ory organized as 262,144 words by 16 bits. The N N 51V4260A series is fabricated with advanced C M OS technology and designed with innovative design


    OCR Scan     		PDF NN51V4260A 256KX 16bit 51V4260A NN51V4260AL 0QD1330