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    41e magnetic sensor

    Abstract: magnetic field magnetoresistance element magnetic resistance element
    Text: SOI^ Y C O R P / C O M P O N E N T PRODS 4TE 0302303 D 0 0 0 3 1 bfl *î DM-233 ~r-&s~-os~ SONY Magnetoresistance Element Description DM-233 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is


    OCR Scan     		DM-233 150mVp-p DM-230, DD03171 DM-233 T-65-05 41e magnetic sensor magnetic field magnetoresistance element magnetic resistance element PDF