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    DDR 8MX16 TSOP 2 66 PIN Search Results

    DDR 8MX16 TSOP 2 66 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    DDR 8MX16 TSOP 2 66 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    em6a9160ts

    Abstract: EM6A9160 DDR 8MX16 tsop 2 66 pin em6a9160ts-5 8MX16DDR
    Text: EtronTech EM6A9160 8M x 16 DDR Synchronous DRAM SDRAM (Rev. 1.4 May/2006) Pin Assignment (Top View) Features • • • • • • • • • • • • • • • • • Fast clock rate: 300/275/250/200MHz Differential Clock CK & /CK Bi-directional DQS


    Original     		EM6A9160 May/2006) 300/275/250/200MHz 16-bit 8Mx16 em6a9160ts EM6A9160 DDR 8MX16 tsop 2 66 pin em6a9160ts-5 8MX16DDR PDF

    TSOP 86 Package

    Abstract: A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin
    Text: 1999 DRAM Design Guidelines Options Package Width Data Rate Voltage I/O 16Mb 64Mb 128Mb 256Mb Clock MHz 1 54 TSOP x4 SDR 3.3V LVTTL na 16Mx4 32Mx4 64Mx4 PC100/133 2 54 TSOP x8 SDR 3.3V LVTTL na 8Mx8 16Mx8 32Mx8 PC100/133 3 54 TSOP x16 SDR 3.3V LVTTL na 4Mx16 8Mx16 16Mx16


    Original     		128Mb 256Mb 16Mx4 32Mx4 64Mx4 PC100/133 16Mx8 32Mx8 4Mx16 TSOP 86 Package A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin PDF

    Automotive Product Selector Guide

    Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
    Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from


    Original     		PDF

    is62c51216al

    Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital


    Original     		PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    IS23SC55160

    Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
    Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are


    Original     		PDF

    is25c64B

    Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
    Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are


    Original     		PDF

    q1257

    Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
    Text: 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed


    Original     		2002791-D-RAM hoch17 DDR400 PC3200) B112-H6731-G10-X-7600 q1257 Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66 PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G PDF

    W986416EH

    Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
    Text: PRODUCT GUIDE Winbond ISSI 2005 http://www.hengsen.cn 产品指南手册 PRODUCT GUIDE =WinbondISSI 授权香港及中国代理= 8 位单片机标准件 型号 W78C32C ROM 型式 ROM ROM RAM I/O 脚 外扩存储 器空间 工作速度 封装 定时器/


    Original     		W78C32C Q4/04 IS25C64A-2 IS25C64A-3 16Kx8 IS25C128-2 W986416EH W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620 PDF

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) Revision 1.0 Rev. 1.0 June 2003 DDR SDRAM 512Mb B-die (x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release


    Original     		512Mb DDR400 200MHz 400Mbps PDF

    IS43LR32640

    Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and


    Original     		i1-44-42218428 IS43LR32640 is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168 PDF

    512MB 8Mx32 DDR DRAM

    Abstract: No abstract text available
    Text: SU5320835D4F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5320835D4F0CG 8Mx32 32MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 25.40mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5320835D4F0CG 8Mx32 (32MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,


    Original     		SU5320835D4F0CU SM5320835D4F0CG SB5320835D4F0CG 8Mx32 100-pin 8Mx16 DDR266A, 512MB 8Mx32 DDR DRAM PDF

    K4H511638B-TCCC

    Abstract: K4H510838B-TCCC K4H510838B-TCC4
    Text: DDR SDRAM 512Mb B-die x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification Revision 1.1 Rev. 1.1 November 2004 DDR SDRAM 512Mb B-die (x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release Revision 1.0 (June 2003) - Updated DC Characteristics


    Original     		512Mb DDR400 200MHz 400Mbps K4H511638B-TCCC K4H510838B-TCCC K4H510838B-TCC4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SU5720835D4DZCU October 5, 2004 Ordering Information Part Numbers Description Module Speed SM5720835D4DZCG 8Mx72 64MB , DDR, 200-pin SO-DIMM, Unbuffered, ECC, 8Mx16 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5720835D4DZCG 8Mx72 (64MB), DDR, 200-pin SO-DIMM, Unbuffered, ECC,


    Original     		SU5720835D4DZCU SM5720835D4DZCG SB5720835D4DZCG 8Mx72 200-pin 8Mx16 DDR266A, PDF

    Untitled

    Abstract: No abstract text available
    Text: SU5641635D4NZCU September 14, 2004 Ordering Information Part Numbers Description Module Speed SM5641635D4NZCG 16Mx64 128MB , DDR, 200-pin SO-DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5641635D4NZCG


    Original     		SU5641635D4NZCU SM5641635D4NZCG 16Mx64 128MB) 200-pin 8Mx16 DDR266A, PDF

    Untitled

    Abstract: No abstract text available
    Text: SU5640835D4NZCU September 10, 2004 Ordering Information Part Numbers Description Module Speed SM5640835D4NZCG 8Mx64 64MB , DDR, 200-pin SO-DIMM, Unbuffered, 8Mx16 Based, Non-ECC, DDR266A, 31.75mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5640835D4NZCG


    Original     		SU5640835D4NZCU SM5640835D4NZCG SB5640835D4NZCG 8Mx64 200-pin 8Mx16 DDR266A, PDF

    K4H511638F

    Abstract: K4H510838F DDR333 DDR400 DDR266
    Text: K4H510838F K4H511638F Industrial DDR SDRAM 512Mb F-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		K4H510838F K4H511638F 512Mb K4H511638F K4H510838F DDR333 DDR400 DDR266 PDF

    TSOP RECEIVER

    Abstract: DDR333 512MB CL2.5 DDR266 DDR333 DDR400 K4H511638B
    Text: DDR SDRAM 512Mb B-die x4, x8, x16 DDR SDRAM 512Mb B-die DDR SDRAM Specification 66 TSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		512Mb TSOP RECEIVER DDR333 512MB CL2.5 DDR266 DDR333 DDR400 K4H511638B PDF

    DDR200

    Abstract: DDR266B HYMD116M6456-H HYMD116M6456-L
    Text: HYMD116M6456-H/L 16Mx64 Unbuffered DDR SO-DIMM PRELIMINARY DESCRIPTION Hynix HYMD116M6456-H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual InLine Memory Modules SO-DIMMs which are organized as 16Mx64 high-speed memory arrays. Hynix


    Original     		HYMD116M6456-H/L 16Mx64 HYMD116M6456-H/L 200-pin 8Mx16 400mil 200pin DDR200 DDR266B HYMD116M6456-H HYMD116M6456-L PDF

    Untitled

    Abstract: No abstract text available
    Text: HYMD116M645A6-K/H/L 16Mx64 Unbuffered DDR SO-DIMM PRELIMINARY DESCRIPTION Hynix HYMD116M645A6-K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules SO-DIMMs which are organized as 16Mx64 high-speed memory arrays. Hynix


    Original     		HYMD116M645A6-K/H/L 16Mx64 HYMD116M645A6-K/H/L 200-pin 8Mx16 400mil 200pin PDF

    DDR200

    Abstract: DDR266B HYMD18M6456-H HYMD18M6456-L
    Text: HYMD18M6456-H/L 8Mx64 Unbuffered DDR SO-DIMM PRELIMINARY DESCRIPTION Hynix HYMD18M6456-H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules SO-DIMMs which are organized as 8Mx64 high-speed memory arrays. Hynix HYMD18M6456-H/L


    Original     		HYMD18M6456-H/L 8Mx64 HYMD18M6456-H/L 200-pin 8Mx16 400mil 200pin HYMD18M6456-K/H/L DDR200 DDR266B HYMD18M6456-H HYMD18M6456-L PDF

    K4H511638B-TCCC

    Abstract: No abstract text available
    Text: DDR SDRAM 512Mb B-die x8, x16 preliminary DDR SDRAM 512Mb B-die DDR400 SDRAM Specification Revision 0.0 Rev. 0.0 Mar. 2003 DDR SDRAM 512Mb B-die (x8, x16) preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release Rev. 0.0 Mar. 2003


    Original     		512Mb DDR400 200MHz 400Mbps DDR400 DDR333 K4H511638B-TCCC PDF