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    Untitled

    Abstract: No abstract text available
    Text: 8GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module


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    240-Pin MT18JSF1G72PZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef84854d35 jsf18c1gx72pz PDF

    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA PDF

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


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    IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM" PDF

    W631GG6KB-12

    Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
    Text: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


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    W631GG6KB W631GG6KB-12 W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I PDF

    96-ball FBGA

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)


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    EDJ1108EJBG EDJ1116EJBG EDJ1108EJBG) EDJ1116EJBG) 78-ball 96-ball 1866Mbps/1600Mbps/1333Mbps 96-ball FBGA PDF

    W632GG6KB

    Abstract: W632GG6KB15I
    Text: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


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    W632GG6KB W632GG6KB15I PDF

    Untitled

    Abstract: No abstract text available
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


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    512M8CN 256M16CP DDR3L-1866 PDF

    78 ball fbga

    Abstract: 128Mx16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA 78-Ball 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


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    IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 Ref82560A/AL 78-ball 78 ball fbga DDR3 DRAM 2GB 128Mx16 96BALL FBGA 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA PDF

    NT5CB256

    Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800


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    NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CB256 NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8 PDF

    MT41K512M8RH

    Abstract: 901KB MT41K256M16 MT41K512M8RH-125 256M16 A2 SMD CODE MARKING MT41K512M8RH-125M DDR3L
    Text: 4Gb: x4, x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K1G4 - 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features • Self refresh temperature SRT • Automatic self refresh (ASR)


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    MT41K1G4 MT41K512M8 MT41K256M16 09005aef8488935b MT41K512M8RH 901KB MT41K256M16 MT41K512M8RH-125 256M16 A2 SMD CODE MARKING MT41K512M8RH-125M DDR3L PDF

    MT18JSF51272PDZ-1G

    Abstract: MT18JSF25672PDZ MT18JSF25672PDZ-1G4 2403 GB 123 MT18JSF51272PDZ-1G6 MT18JSF51272PDZ
    Text: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF25672PDZ – 2GB MT18JSF51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C B1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module


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    240-Pin MT18JSF25672PDZ MT18JSF51272PDZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef83d9afa1 MT18JSF51272PDZ-1G MT18JSF25672PDZ MT18JSF25672PDZ-1G4 2403 GB 123 MT18JSF51272PDZ-1G6 MT18JSF51272PDZ PDF

    L9D3256M32SBG1

    Abstract: No abstract text available
    Text: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999


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    L9D3256M32SBG1 L9D3512M32SBG1 256-512M DDR3-1333 LDS-L9D3xxxM32SBG1 L9D3256M32SBG2I107 L9D3256M32SBG1 PDF

    DDR3 LRDIMM

    Abstract: MT72JSZS4G72LZ-1G9 MT72JSZS4G72LZ-1G9E2A7 DDR3 DIMM SPD LRDIMM LRDIMM TSE-200
    Text: 32GB x72, ECC, QR 240-Pin DDR3 LRDIMM Features DDR3 SDRAM LRDIMM MT72JSZS4G72LZ – 32GB Features Figure 1: 240-Pin LRDIMM (MO-269 RC/C) • 240-pin, load-reduced dual in-line memory module (LRDIMM) • Memory buffer (MB) isolates DRAM interface from card edge


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    240-Pin MT72JSZS4G72LZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 t08-368-3900 09005aef83b62686 DDR3 LRDIMM MT72JSZS4G72LZ-1G9 MT72JSZS4G72LZ-1G9E2A7 DDR3 DIMM SPD LRDIMM LRDIMM TSE-200 PDF

    MT41K256M8DA

    Abstract: MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K
    Text: Preliminary‡ 2Gb: x4, x8, x16 Automotive DDR3 SDRAM Features Automotive DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 banks MT41J256M8 – 32 Meg x 8 x 8 banks MT41J128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • •


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    MT41J512M4 MT41J256M8 MT41J128M16 09005aef84bd8f53 MT41K256M8DA MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K PDF

    MT8JTF51264

    Abstract: MT8JTF51264AZ MT8JTF512 DDR3 udimm jedec MT8JTF51264A
    Text: 1GB, 2GB, 4GB x64, SR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT8JTF12864AZ – 1GB MT8JTF25664AZ – 2GB MT8JTF51264AZ – 4GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C A) • DDR3 functionality and operations supported as defined in the component data sheet


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    240-Pin MT8JTF12864AZ MT8JTF25664AZ MT8JTF51264AZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 MT8JTF51264 MT8JTF51264AZ MT8JTF512 DDR3 udimm jedec MT8JTF51264A PDF

    TA 7698 AP

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:


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    L9D3256M32SBG1 L9D3512M32SBG1 256-512M F5478O54UDI3< 54Ogi F5734O54UDI3< 86Ogi 3057X /202897X1-203X TA 7698 AP PDF

    K4B4G0846C

    Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
    Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    K4B4G0446C K4B4G0846C 78FBGA K4B4G0846C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866 PDF

    MICRON ddr3

    Abstract: A-225 DDR3 1gb dimm
    Text: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • Marking


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    MT41J512M4 MT41J256M8 MT41J128M16 09005aef826aaadc MICRON ddr3 A-225 DDR3 1gb dimm PDF

    DDR3-1866 RDIMM SPD JEDEC

    Abstract: M392B5670GB0-CF8
    Text: Rev. 1.01, Dec. 2010 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin 78FBGA 256Mbx4 256Mx72 K4B1G0446G-BC* DDR3-1866 RDIMM SPD JEDEC M392B5670GB0-CF8 PDF

    K4B2G0846D

    Abstract: K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D K4B2G0446D-HCH9
    Text: Rev. 1.1, Sep. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    K4B2G0446D K4B2G0846D 78FBGA K4B2G0846D K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D-HCH9 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    M471B2873GB0 M471B5673GB0 204pin 78FBGA K4B1G0846G 128Mbx8 256Mx64 PDF

    LRDIMM SPD

    Abstract: Micron LRDIMM LRDIMM
    Text: 32GB x72, ECC, QR 240-Pin DDR3 LRDIMM Features DDR3 SDRAM LRDIMM MT72JSZS4G72LZ – 32GB Features Figure 1: 240-Pin LRDIMM (MO-269 RC/C) • 240-pin, load-reduced dual in-line memory module (LRDIMM) • Memory buffer (MB) isolates DRAM interface from card edge


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    240-Pin MT72JSZS4G72LZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 t368-3900 09005aef83b62686 LRDIMM SPD Micron LRDIMM LRDIMM PDF

    MT9JSF25672AZ-2G1

    Abstract: micron ddr3 2133 MT4J128M8
    Text: 1GB, 2GB x72, ECC, SR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT9JSF12872AZ – 1GB MT9JSF25672AZ – 2GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C D1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, unbuffered dual in-line memory module


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    240-Pin MT9JSF12872AZ MT9JSF25672AZ 240-pin, PC3-17000, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 MT9JSF25672AZ-2G1 micron ddr3 2133 MT4J128M8 PDF

    MT36JSF2G72PZ-1G4 SPD

    Abstract: No abstract text available
    Text: 16GB x72, ECC, DR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT36JSF2G72PZ – 16GB Features Figure 1: 240-Pin RDIMM (R/C J1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module


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    240-Pin MT36JSF2G72PZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef846f3cd1 jsf36c2gx72pz MT36JSF2G72PZ-1G4 SPD PDF