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Siemens 6SL32230DE375BA0 (ALTERNATE: 6SL32230DE375BA0) SINAMICS PM230-IP55-FSF-B-400V 75KW ; 6SL32230DE375BA0 \| Siemens 6SL32230DE375BA0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	6SL32230DE375BA0 (ALTERNATE: 6SL32230DE375BA0)	Bulk		2 Weeks	1	1 $18059.61 10 $18059.61 100 $18059.61 1000 $18059.61 10000 $18059.61	Get Quote
Vishay BLH GL41D-E3/75
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Bristol Electronics	GL41D-E3/75		1,500		9	1 - 10 $0.6 100 $0.3 1000 $0.12 10000 $0.12	Buy Now
GSI Technology GL41D-E3/75
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Bristol Electronics	GL41D-E3/75		515		9	1 - 10 $0.6 100 $0.3 1000 $0.18 10000 $0.18	Buy Now
IXYS Corporation DE375501N21A RF POWER MOSFET RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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ComSIT USA	DE375501N21A		24			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Integrated Circuits Division DE375-102N10A MOSFET DIS.10A 1000V N-CH DE ENHANCEMENT SMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	DE375-102N10A					1 $45.40641 10 $42.4359 100 $42.4359 1000 $42.4359 10000 $42.4359	Get Quote

DE375 Datasheets (17)

Part	Manufacturer	Description	Datasheet Type	PDF
DE-375	Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF
DE375	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
DE-375-102N10	Directed Energy	DE-SERIES FAST POWER MOSFETS	Scan	PDF
DE375-102N10A	Directed Energy	RF Power MOSFET	Original	PDF
DE375-102N10A	IXYS	TRANS MOSFET N-CH 1000V 10A 6DE 375	Original	PDF
DE-375-102N11-00	Directed Energy	DE-SERIES FAST POWER MOSFETS	Scan	PDF
DE375-102N11-00	Directed Energy	DE-SERIES FAST POWER MOSFETS	Scan	PDF
DE375-102N12A	Directed Energy	RF Power MOSFET	Original	PDF
DE375-102N12A	IXYS	TRANS MOSFET N-CH 1000V 12A 6DE 375	Original	PDF
DE375-102N30-00	Directed Energy	DE-SERIES FAST POWER MOSFETS	Scan	PDF
DE-375-301N35	Directed Energy	DE-SERIES FAST POWER MOSFETS	Scan	PDF
DE-375-301N35-00	Directed Energy	DE-SERIES FAST POWER MOSFETS	Scan	PDF
DE375-302N40-00	Directed Energy	DE-SERIES FAST POWER MOSFETS	Scan	PDF
DE-375-501N21	Directed Energy	DE-SERIES FAST POWER MOSFETS	Scan	PDF

DE-375-501N21-00	Directed Energy	DE-SERIES FAST POWER MOSFETS	Scan	PDF
DE375-501N21A	Directed Energy	RF Power MOSFET	Original	PDF
DE375-501N21A	IXYS	TRANS MOSFET N-CH 500V 25A 6DE 375	Original	PDF

DE375 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
nec 2401 Abstract: 400P DE375-102N10A Directed Energy Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	PDF	DE375-102N10A nec 2401 400P DE375-102N10A Directed Energy
DE375-501N21A Abstract: "RF MOSFETs" 400P Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	DE375-501N21A 50MHz DE375-501N21A "RF MOSFETs" 400P
102N12 Abstract: Directed Energy Directed 400P DE375-102N12A Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	DE375-102N12A 50MHz 102N12 Directed Energy Directed 400P DE375-102N12A
DE375-102N10A Abstract: No abstract text available Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000	Original	PDF	DE375-102N10A DE375-102N10A
13.56MHZ 3KW GENERATOR Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A	Original	PDF	56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
nec 2401 Abstract: DE375-102N10A "RF MOSFETs" 400P Text: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE375-102N10A nec 2401 DE375-102N10A "RF MOSFETs" 400P
DE375-102N12A Abstract: 400P Text: DE375-102N12A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	DE375-102N12A 50MHz DE375-102N12A 400P
DE375-102N12A Abstract: PIN diode SPICE model 400P 102N12A Text: DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous	Original	PDF	DE375-102N12A 50MHz 2N12A DE375-102N12A PIN diode SPICE model 400P 102N12A
DE275-102N06A Abstract: DE375-102N10A DE375-501N16A Text: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.	Original	PDF	DE375-501N16A DE275-102N06A DE375-102N10A DE275-102N06A DE375-102N10A DE375-501N16A
400P Abstract: DE375-501N21A mosfet SPICE MODEL Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	DE375-501N21A 50MHz 400P DE375-501N21A mosfet SPICE MODEL
DE375-0001 Abstract: DE375-102N10A nec 2401 400P DE-375-102N10 Text: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000	Original	PDF	DE375-102N10A DE375-0001 DE375-102N10A nec 2401 400P DE-375-102N10
DE375-501N21A Abstract: 400P PIN diode SPICE model Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	DE375-501N21A 50MHz DE375-501N21A 400P PIN diode SPICE model
DE375-501N16A Abstract: No abstract text available Text: Directed Energy, Inc. An DE375-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500	Original	PDF	DE375-501N16A DE375-501N16A
IXZ4DF12N100 Abstract: DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier DEIC-515 RF Amplifier 500w 175 mhz Text: IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability	Original	PDF	IXZ4DF12N100 DEIC-515 DE375-102N12A 1000lvin IXZ4DF12N100 DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier RF Amplifier 500w 175 mhz

Directed Energy Abstract: 501N21 DE-375 Text: PRELIMINARY SPECIFICATIONS DE-375 501N21 21A, 500V, .25Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	PDF	DE-375 501N21 150oC Directed Energy 501N21
DE-375-102N10 Abstract: 102N10 DE-375 Text: PRELIMINARY SPECIFICATIONS DE-375 102N10 10A, 1000V, 1.2Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	PDF	DE-375 102N10 150oC DE-375-102N10 102N10
Untitled Abstract: No abstract text available Text: 1 1 11 1 2341 567891 SA2336-E 1 1234567895A3 ◆ 66E39948ED79DE37543794834 ◆ B845D7434CEB374B824D4DE345FEE3784 ◆4 BC34B3B74D734 ◆4 75D9FD8B74 39B74!4"BB56734 39B74 ◆ #	Original	PDF	SA2336-E 1234567895A3 39948ED79 DE375 B8242B 2423D84CB99B D8B674 3E8B39 B845D74 34CEB
Untitled Abstract: No abstract text available Text: 1 1 11 1 2341 567891 SY2336-HA 1 1234567895A3 ◆ 66E39948ED79DE37543794834 ◆ B845D7434CEB374B824D4DE345FEE3784 ◆4 BC34B3B74D734 ◆ 75D9FD8B74 39B74!4"BB56734 39B74 ◆ #	Original	PDF	SY2336-HA 1234567895A3 39948ED79 DE375 B8242B 2423D84CB99B D8B674 3E8B39 B845D74 34CEB
bc 657 Abstract: No abstract text available Text: 1 1 11 1 2341 567891 SSB2336E-G 1 1234567895A3 ◆ 66E39948ED79DE37543794834 ◆ B845D7434CEB374B824D4DE345FEE3784 ◆4 BC34B3B74D734 ◆4 75D9FD8B74 39B74!4"BB56734 39B74 ◆ #	Original	PDF	SSB2336E-G 1234567895A3 39948ED79 DE375 B8242B 2423D84CB99B D8B674 3E8B39 B845D74 34CEB bc 657
Untitled Abstract: No abstract text available Text: 1 1 11 1 2341 567891 SM2336-L 1 1234567895A3 ◆ 66E39948ED79DE37543794834 ◆ B845D7434CEB374B824D4DE345FEE3784 ◆4 BC34B3B74D734 ◆4 75D9FD8B74 39B74!4"BB56734 39B74 ◆ #	Original	PDF	SM2336-L 1234567895A3 39948ED79 DE375 B8242B 2423D84CB99B D8B674 3E8B39 B845D74 34CEB
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
DE-Series Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375 Text: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high	Original	PDF
mospower applications handbook Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101	OCR Scan	PDF	00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
LR0500 Abstract: "Amplifier Research" TC3020A TC1510A TC3020 TC1510 Text: Extended-bandwidth TEM cells . . Models TC1510A and TC3020A • Frequencies up to 750 MHz ■ Cable-access panel permits insertion of I/O cables for normal operation of test item without breaching the main doors ■ Gasketing of doors and seams minimizes field leakage	OCR Scan	PDF	TC1510A TC3020A LR0500 "Amplifier Research" TC3020A TC3020 TC1510

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DE375 Search Results

DE375 Price and Stock

Siemens 6SL32230DE375BA0 (ALTERNATE: 6SL32230DE375BA0)

Vishay BLH GL41D-E3/75

GSI Technology GL41D-E3/75

IXYS Corporation DE375501N21A

IXYS Integrated Circuits Division DE375-102N10A

DE375 Datasheets (17)

DE375 Datasheets Context Search

nec 2401

DE375-501N21A

102N12

DE375-102N10A

13.56MHZ 3KW GENERATOR

nec 2401

DE375-102N12A

DE375-102N12A

DE275-102N06A

400P

DE375-0001

DE375-501N21A

DE375-501N16A

IXZ4DF12N100

Directed Energy

DE-375-102N10

Untitled

Untitled

bc 657

Untitled

irfb4115

DE-Series

mospower applications handbook

LR0500