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    DEPENDENCE OF CURRENT ON LIGHT DEPENDENT RESISTOR Search Results

    DEPENDENCE OF CURRENT ON LIGHT DEPENDENT RESISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP185(SE Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4pin SO6 Visit Toshiba Electronic Devices & Storage Corporation
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TLP785 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 5000 Vrms, DIP4(TLP785) Visit Toshiba Electronic Devices & Storage Corporation
    TLP383 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP292 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, SO4 Visit Toshiba Electronic Devices & Storage Corporation

    DEPENDENCE OF CURRENT ON LIGHT DEPENDENT RESISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PULSED LASER DIODE DRIVER circuits

    Abstract: SLT2170-LN GAPC PULSED LASER DIODE DRIVER optical modulation driver ic used for amplitude modulation dependence of current on light dependent resistor high power "laser diode driver"
    Text: Application Note 166 Interfacing Digitally Controlled Pots and Resistors to Laser Drivers www.maxim-ic.com INTRODUCTION A review of the different electrical interfaces between Digitally Controlled Pots/Resistors and Laser Drivers is presented in the context of open loop and closed loop operation. The end objective of such fiber optic


    Original     		SLT2170-LN DS1847 AN167: DS1847/1848 PULSED LASER DIODE DRIVER circuits GAPC PULSED LASER DIODE DRIVER optical modulation driver ic used for amplitude modulation dependence of current on light dependent resistor high power "laser diode driver" PDF

    PULSED LASER DIODE DRIVER

    Abstract: light dependent resistor circuit DFB laser drivers variable resistor AN166 AN167 DS1847 MAX3273 SLT2170-LN laser APC CIRCUIT
    Text: Application Note 166 Interfacing Digitally Controlled Pots and Resistors to Laser Drivers www.maxim-ic.com INTRODUCTION A review of the different electrical interfaces between Digitally Controlled Pots/Resistors and Laser Drivers is presented in the context of open loop and closed loop operation. The end objective of such fiber optic


    Original     		SLT2170-LN DS1847 AN167: DS1847/1848 PULSED LASER DIODE DRIVER light dependent resistor circuit DFB laser drivers variable resistor AN166 AN167 MAX3273 laser APC CIRCUIT PDF

    BPW-20R

    Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
    Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200


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    light dependent resistor circuit

    Abstract: TLE4241G dependence of current on light dependent resistor B59940C0080A070 recording PTC 30 R-series Epcos chip resistors PTC Temperature Dependent Resistor
    Text: Direct Link 1029 Applications & Cases PTC thermistors as current limiters for LEDs September 2006 No chance of heat death Light-emitting diodes LEDs have developed greatly in recent years: from leading a niche existence as pure indicator lamps to high-power LEDs with a


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    uv phototransistor

    Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
    Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200


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    BPW21R

    Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
    Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al


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    TXD10K60

    Abstract: BAY61 TLB3101 diode BAY61 TCA955 ic CD 4047 BAY61 diode tab2453 internal circuit diagram for ic 4047 TBL3101
    Text: SFH900—A Low-Cost Miniature Reflex Optical Sensor Appnote 26 Whether for an industrial plant or a hobbyist’s drilling machine, an electric drive will hardly be acceptable nowadays without speed control. Incremental bar patterns simply applied to rotating shafts can be detected by the new


    Original     		SFH900--A SFH900. SFH900 TAB2453 TXD10K60 BAY61 TLB3101 diode BAY61 TCA955 ic CD 4047 BAY61 diode tab2453 internal circuit diagram for ic 4047 TBL3101 PDF

    JESD57

    Abstract: DAC121S101WGRQV F-1192 DAC121S101QMLV DAC121S101 LM124
    Text: This material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected].


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    DAC121S101WGRQV

    Abstract: Micro Linear cross DAC121S101 DAC121S101QML LM124 F-1192 DAC121S101QMLV output impedance calculation in LM124 JESD57
    Text: Single Event Transient Response Dependence on Operating Conditions for a Digital to Analog Converter Kirby Kruckmeyer, Member, IEEE, James S. Prater, Bill Brown and Sandeepan DasGupta Abstract—The Single Event Effect SEE characterization of a Digital to Analog Converter (DAC) showed an unexpected Single


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    BPW34 application note

    Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R
    Text: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be


    Original     		14-Apr-04 BPW34 application note photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R PDF

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission


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    Measurement Techniques

    Abstract: measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note
    Text: Measurement Techniques www.vishay.com Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical


    Original     		31-Jul-12 Measurement Techniques measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note PDF

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram
    Text: Measurement Techniques Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical


    Original     		27-Aug-08 BPW34 application note APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram PDF

    near IR sensors with daylight filter

    Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
    Text: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into


    Original     		w10MW) near IR sensors with daylight filter luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector PDF

    Infrared detectors

    Abstract: bolometer Thermopile array
    Text: Thermal detectors CHAPTER 07 1 Thermopile detectors 1-1 1-2 1-3 1-4 1-5 1-6 Features Structure Characteristics How to use New approaches Applications 2 Bolometers 2-1 Operating principle and structure 2-2 Characteristics 1 Thermal detectors Thermal detectors have an absorption layer that absorbs and converts light into heat, and provide an electric signal output that


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    TT162N16KOF-K

    Abstract: class d Sinus inverter circuit diagram schematics 3 phase sinus inverters circuit diagram igbt GTO thyristor 100A, 400V T930S18TMC vt laser diode DVD lg RC snubber thyristor design SCR 400V 5000A pulsed powerblock tt 60 N powerblock tt 93
    Text: Application Note, V2.2, March 2006 AN2006-03 Technical Information Bipolar Semiconductors Seite 1 von 87 Edition 2006-05-22 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2006. All Rights Reserved. LEGAL DISCLAIMER


    Original     		AN2006-03 TT162N16KOF-K class d Sinus inverter circuit diagram schematics 3 phase sinus inverters circuit diagram igbt GTO thyristor 100A, 400V T930S18TMC vt laser diode DVD lg RC snubber thyristor design SCR 400V 5000A pulsed powerblock tt 60 N powerblock tt 93 PDF

    NTD4302-001

    Abstract: BAT54 CS5323 NTD4302
    Text: AND8071/D Enhanced V2t and Inductor Current Sense Accuracy http://onsemi.com APPLICATION NOTE Introduction The use of Enhanced V2 control and inductor current sense for producing single and multi–phase buck converters is an established concept. There are several references one


    Original     		AND8071/D r14525 NTD4302-001 BAT54 CS5323 NTD4302 PDF

    Jaro

    Abstract: hot electron devices QUANTUM CAPACITIVE C-15 C-16 TC271 H2 Analyzer 4600
    Text: TC271 Characterization Report Jeffrey S. Campbell Image Sensor Technology Center Texas Instruments Incorporated Dallas, Texas SEPTEMBER 1994 SOCA004 C-1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any


    Original     		TC271 SOCA004 11-mm Jaro hot electron devices QUANTUM CAPACITIVE C-15 C-16 TC271 H2 Analyzer 4600 PDF

    Photo diode TFK S 186 P

    Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
    Text: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    BPW20RF

    Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
    Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPV11 2002/95/EC 2002/96/EC BPV11 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW20RF BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g PDF

    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of


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    diode BAY61

    Abstract: siemens opto sensor TLB3101 TCA955 tca 955 BAY61 led and phototransistor sensor used in RPM indicator 74LS47 pin configuration ic 74LS47 TLB 3101
    Text: SIEMENS CAPITAL/ OPTO ~T ~ Lf f - 0 3 P | fl53fc,3ab □□□3SbT T SIEM EN S SFH 900 — A Low-Cost Miniature Reflex Optical Sensor Appnote 26 W hether fo r an industrial plant or a hobbyists’ drilling machine, an e lectric drive w ill hardly be acceptable


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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CAPITAL/ OPTO H I-03 ^ P | 5531.3^ □□□3SbT T SIEM ENS SFH 900 — A Low-Cost Miniature Reflex Optical Sensor Appnote 26 Whether for an industrial plant or a hobbyists’ drilling machine, an electric drive will hardly be acceptable nowadays without speed control. Incremental bar patterns simply applied to rotating shafts can be detected


    OCR Scan     		aa3h32b 74LS190 74LS47 LS190 PDF

    KIRDB0079EB

    Abstract: pyroelectric thermocouple pyroelectric tgs bolometer detector "golay"
    Text: Construction and Operating Characteristics In frare d ra d ia tio n , d isc o v ere d in 1800 by S ir W illia m H e rch el, is electrom agnetic w aves in the w avelength range extending from 0.75 |J.m to 1000 im, in the range b etw een visible light and m icrow aves.


    OCR Scan     		6x108 1x10B 1x109 2x108 1x108 2x101 5x101 1x101 8x109 KIRDB0079EB pyroelectric thermocouple pyroelectric tgs bolometer detector "golay" PDF