N-Channel
Abstract: N-Channel Depletion-Mode MOSFET
Text: TSM126 N-Channel Depletion-Mode MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(Ω)(max) Pin Definition: 1. Gate 2. Source 3. Drain 600 700 @ VGS = 0V Features ● Depletion Mode ● Low Gate Charge ID (A) 0.03 Block Diagram Application ● Converters ● Telecom
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TSM126
OT-23
TSM126CX
N-Channel
N-Channel Depletion-Mode MOSFET
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed. FEATURES
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UF601
UF601
UF601L-AE3-R
UF601G-AE3-R
OT-23
QW-R502-699
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF601Q Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET DESCRIPTION The UTC UF601Q is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed. FEATURES
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UF601Q
UF601Q
UF601QG-AE3-R
UF601QG-AE2-R
OT-23
OT-23-3
601QG
QW-R502-A25
UF601at
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IXTA02N100D2
Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .
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AN-D16,
IXTA02N100D2
depletion 400V power mosfet
IXTP02N100D2
N-Channel Depletion-Mode MOSFET high voltage
depletion-mode MOSFET
IXTU02N100D2
MOSFET "CURRENT source"
IXTY02N100D2
Depletion MOSFET
IXTY1R6N50D2
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed. FEATURES
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UF601
UF601
UF601G-AA3-R
UF601G-AE3-R
OT-223
OT-23
QW-R502-699
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed. FEATURES
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UF601
UF601
UF601L-AE3-R
UF601G-AE3-R
UF601L-AE2-R
UF601G-AE2-R
OT-23
OT-23-3
QW-R502-699
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET 3 DESCRIPTION 1 2 The UTC UF601 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.
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UF601
UF601
OT-23
SC-59)
UF601L-AE3-R
UF601G-AE3-R
QW-R502-699
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Untitled
Abstract: No abstract text available
Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max
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NTE454
NTE454
20Vdc
30Vdc
200MHZ
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NTE454
Abstract: 200MHZ VG15
Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max
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NTE454
NTE454
20Vdc
30Vdc
200MHZ
200MHZ
VG15
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marking SH SOT23 mosfet
Abstract: DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5
Text: DMN5501/DMZ5501 Depletion-Mode Power MOSFET General Features Ordering Information 550V 60 Ω 200mA Package Marking DMN5501 TO-92 DMN5501 DMZ5501 SOT-23 5501 ina Part Number im Absolute Maximum Ratings Parameter TA=25℃ unless otherwise specified DMN5501
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DMN5501/DMZ5501
200mA
DMN5501
DMZ5501
OT-23
74tten
marking SH SOT23 mosfet
DMZ5501
DMN5501
KP 72
marking SH SOT23
KP SOT23
DMZ5
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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LND150N8 equivalent
Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
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LND150
O-243AA*
LND150N3
LND150N8
LND150ND
OT-89.
100nA
LND150N8 equivalent
depletion n-channel mosfet to-92
LND150
LND150N3
LND150N8
LND150ND
MOSFET IGSS 100nA VDS 20V
depletion-mode MOSFET
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000
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IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
O-252
O-263
O-220)
O-263
O-220
O-220AB
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V
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IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
800mA
O-252
O-263
O-220)
O-263
O-220
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IXTP08N100D2
Abstract: IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N
Text: Preliminary Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V
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IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
800mA
O-252
O-263
O-220)
O-263
O-220
IXTP08N100D2
IXTA08N100D2
IXTY08N100D2
08N100
08n10
500VID
ixtp08n100
T08N
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08N50D
Abstract: IXTY08N50D2
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous
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IXTY08N50D2
IXTA08N50D2
IXTP08N50D2
800mA
O-252
O-220)
O-263
O-220
O-263
08N50D
IXTY08N50D2
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IXTY1R6N50D2
Abstract: IXTP1R6N50D2
Text: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous
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IXTY1R6N50D2
IXTA1R6N50D2
IXTP1R6N50D2
O-252
O-220)
O-263
O-220
O-263
O-220AB
IXTY1R6N50D2
IXTP1R6N50D2
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NTE221
Abstract: depletion MOSFET riss
Text: NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.
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NTE221
NTE221
depletion MOSFET
riss
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Untitled
Abstract: No abstract text available
Text: BSP 129 SIPMOS N Channel MOSFET 32E D • fl23b320 GG171Q3 5 « S I R Preliminary Data • • • • • SIEMENS/ SPCL-, SEMICONDS SIPMOS - depletion mode Drain-source voltage Continuous drain current Drain-source on-resistance Total power dissipation Vis = 240V
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OCR Scan
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fl23b320
GG171Q3
Q62702-S510
00A/JUS
00A//JS
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous
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IXTY1R6N50D2
IXTA1R6N50D2
IXTP1R6N50D2
O-252
O-220)
O-263
O-220
O-263
O-220Aea
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08N50D
Abstract: ixty08n50d2 IXTP08N50D2
Text: Preliminary Technical Information IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous
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IXTY08N50D2
IXTA08N50D2
IXTP08N50D2
800mA
O-252
O-220)
O-263
O-220
O-263
08N50D
ixty08n50d2
IXTP08N50D2
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IXTH6N50D2
Abstract: IXTP6N50D2 IXTA6N50D2 6N50D2 IXTP6N50
Text: Preliminary Technical Information IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 500V 6A 500mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous
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IXTA6N50D2
IXTP6N50D2
IXTH6N50D2
O-263
O-220
O-247)
O-263
O-247
O-220AB
IXTH6N50D2
IXTP6N50D2
IXTA6N50D2
6N50D2
IXTP6N50
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Untitled
Abstract: No abstract text available
Text: BEE D • flE3b320 0017173 4 « S I P SIPMOS N Channel MOSFET T - S á M S" SIEMENS/ SPCLi SEMICONDS • SIPMOS - depletion mode • Draln-source voltage • Continuous drain current Vas = 250V /„ = 0.04A • Drain-source on-resistance • Total power dissipation
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flE3b320
Q62702-S612
001717b
T-a6-25
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTA1N170DHV IXTH1N170DHV Depletion Mode MOSFET VDSX ID on RDS(on) = > 1700V 1A 16 N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1700 V VDGX
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IXTA1N170DHV
IXTH1N170DHV
O-263HV
O-247HV
062in.
100ms
1N170D
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