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    DETECTOR APD NEC Search Results

    DETECTOR APD NEC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR4510UR-AZ Renesas Electronics Corporation Detectors, , / Visit Renesas Electronics Corporation
    YCB16RL78I1D001B Renesas Electronics Corporation Smoke Detector Visit Renesas Electronics Corporation
    EXE8602-DNT Renesas Electronics Corporation 71 – 86 GHz Power Detector Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR4211TH-AZ Renesas Electronics Corporation Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications Visit Renesas Electronics Corporation

    DETECTOR APD NEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Lucent 1319

    Abstract: No abstract text available
    Text: Rev. B01 Jun/2003 ME7105 Power Management Chipset for APD Integrated Input Optical Power Detector Description ME7105 is a thick film hybrid chip consists of a PFM DC-DC step up converter which boost the input logic 5V power supply voltage up to 90 Volt for the


    Original     		PDF Jun/2003 ME7105 ME7105 Lucent 1319

    10G EML TOSA

    Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
    Text: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely


    Original     		PDF acros88-2247 04/2M 10G EML TOSA TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G

    10G APD ROSA

    Abstract: TOSA 10G DFB NEC TOSA 10G TOSA 1310 10G 10G APD TOSA 10G ROSA 1310 10G Photodiode, 1550nm, butterfly package detector apd nec 10G TOSA
    Text: NEC ELECTRONICS FIBER OPTIC DEVICES — 2009 CONTENTS How we fit into the picture . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 PRODUCTS 10G DFB TOSA and PIN ROSA . . . . . . . . . . . . . . . . . . . . . . . . . . 4 10G FP TOSA and MM PIN ROSA . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF NX6309 OC-12, NX6311 NX6330 NX6410 OC-48 1490nm) NX6411 10G APD ROSA TOSA 10G DFB NEC TOSA 10G TOSA 1310 10G 10G APD TOSA 10G ROSA 1310 10G Photodiode, 1550nm, butterfly package detector apd nec 10G TOSA

    Lucent apd

    Abstract: APD power supply LG1628AXA LG1600 OP11 OP21 STM-16 transimpedance amplifier 7.5 GHz lucent technologies W series op2a
    Text: Preliminary Data Sheet January 1998 LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 Gbits/s ■ High gain: 5.8 kΩ transimpedance ■ Complementary 50 Ω outputs ■ Low noise ■ Ultrawide dynamic range ■ Single –5.2 V ECL power supply


    Original     		PDF LG1628AXA LG1605 LG1600 LG1628AXA DS97-156FCE Lucent apd APD power supply OP11 OP21 STM-16 transimpedance amplifier 7.5 GHz lucent technologies W series op2a

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


    Original     		PDF

    Photodetector 1550nm

    Abstract: PT0236-6-FC PT0236-6-SC STM-16 apd photodetector photodetector apd dwdm
    Text: 2.5Gb/s Receiver Module Description The 2.5 Gbits/s lightwave receiver module is for SONET OC-48 and SDH STM-16 telecommunications long haul application and highspeed data communication applications. The receiver converts received optical signals range of 1.2 m to 1.6 m wavelength into differential


    Original     		PDF OC-48 STM-16 1310nm 1550nm PT0236-6-FC PT0236-6-SC Photodetector 1550nm PT0236-6-FC PT0236-6-SC apd photodetector photodetector apd dwdm

    Sensors PSD

    Abstract: No abstract text available
    Text: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches


    Original     		PDF 16-element C9004) KACCC0426EB Sensors PSD

    detector apd nec

    Abstract: C11531E PX10160E STM-64
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    bfy 40

    Abstract: STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog
    Text: OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE May 2001 SAFETY INFORMATION ON THIS PRODUCT NEC Corporation DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT


    Original     		PDF P12480EJNV0SG00 bfy 40 STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog

    EUDYNA

    Abstract: FRM5W232FY
    Text: InGaAs-PIN/Preamp Receiver FRM5W232FY FEATURES • 5-pin coaxial ROSA Receiver Optical Subassembly with LC receptacle • InGaAs-PIN PD with 3.3V pre-amplfier • Wide Band: 2.2GHz • Data rate up to 2.7Gb/s • Differential Output • High Sensitivity: -34dBm typ.


    Original     		PDF FRM5W232FY -34dBm 550nm coa4888 EUDYNA FRM5W232FY

    C30902EH

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This


    Original     		PDF C30902 C30902EH C30921EH DTS0408

    receiver L16.2

    Abstract: OD-J8671-HA01 G957 l16.2 H1940 HA01 OD-J8671-0A01 STM-16 detector apd nec sensitivity InGaAs APD 28 pin apd 2.5 g 1550nm
    Text: OE HYBRID 2.48832 Gbps Receiver OD-J8671-0A01/HA01 OC-48 LR-1, LR-2, LR-3 STM-16 L-16. 1, L-16. 2, L-16.3 -1- Copyright C 1994-2001 NEC Corporation 11th September, 2001 Rev. 0.2, Preliminary - Contents - 1. PRODUCT


    Original     		PDF OD-J8671-0A01/HA01 OC-48 STM-16 receiver L16.2 OD-J8671-HA01 G957 l16.2 H1940 HA01 OD-J8671-0A01 detector apd nec sensitivity InGaAs APD 28 pin apd 2.5 g 1550nm

    C30902SH-DTC

    Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
    Text: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the


    Original     		PDF C30902EH C30921EH C30902SH-DTC PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode

    C30902EH

    Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
    Text: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as


    Original     		PDF C30902EH C30921EH DTS0408 C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz

    APD bias gain

    Abstract: avalanche photodiode bias LH0032
    Text: Si APDs Type No. Low Temperature Coefficient Types, for 800 nm Range Dimensional Outline (P.46, 47)/ Window Material *1 Package /K T O -18 S6045-01 S6045-02 S6045-03 S6045-04 /K S6045-05 ® /K S6045-06 ® /K TO-5 TO-8 Effective '2 Effective Active Area


    OCR Scan     		PDF S6045-01 S6045-02 S6045-03 S6045-04 S6045-05 S6045-06 OPA620, LH0032, KAPDC0005EA APD bias gain avalanche photodiode bias LH0032

    Si apd photodiode

    Abstract: photodiode Avalanche photodiode APD FOR POWER G
    Text: Si APDs Type No. Low Temperature Coefficient Types, for 800 nm Range Dimensional Outline (P.46, 47)/ Window Material *1 Package S6045-01 S6045-02 0 /K T O -18 S6045-03 S6045-04 /K TO-5 S6045-05 /K S6045-06 ® /K T O -8 Area Spectral Response Range


    OCR Scan     		PDF S6045-01 S6045-02 S6045-03 S6045-04 S6045-05 S6045-06 KAPDC0005EA Si apd photodiode photodiode Avalanche photodiode APD FOR POWER G

    avalanche photodiode ingaas ghz

    Abstract: No abstract text available
    Text: N EC ELECTRONI CS INC bZE ]> • b427S5S Ga 3 û l 3 1 Ô1S H N E C E DATA SHEET NEC PHOTO DIODE NDL5520C ELECTRON DEVICE 2 .5 Gb/s OPTICAL FIBER COMMUNICATIONS 050 Mm InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5520C is an InGaAs Avalanche Photodiode especially designed for a detector of 25 Gb/s optical fiber communication


    OCR Scan     		PDF b427S5S NDL5520C NDL5520C NDL5520P NDL5501P NDL5520P1 NDL5501P1 NDL5506P: GI-50 NDL5516P: avalanche photodiode ingaas ghz

    LG1628AXA

    Abstract: LG1600 LMC6082IM STM-16 1628B APD power supply OP291GS LOW NOISE HYBRID operational amplifier
    Text: Preliminary Data Sheet January 1998 m l c r ö p i p f t r ö n i f ? aro un m i u u e i e u r u n i i ì yiuup Lucent Technologies Bell Labs Innovations LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 Gbits/s ■ High gain: 5.8 k£1 transimpedance


    OCR Scan     		PDF LG1628AX LG1628AXA LG1628A 1628BXA* LG1600 LMC6082IM STM-16 1628B APD power supply OP291GS LOW NOISE HYBRID operational amplifier

    lucent LG1605

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 1998 microelectronics group Lucent Technologies Belt Labs Innovations LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 Gbits/s ■ High gain: 5.8 k£i transimpedance ■ Complementary 50 Q outputs


    OCR Scan     		PDF LG1628AXA LG1605 LG1600 DS97-156FCE lucent LG1605

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC b 2 E ]> • ^ 5 7 5 2 3 oo3fiotfl T 5 b HINECE DATA SHEET NEC PHOTO DIODE N D L 5 1 0 0 ELECTRON DEVíCE 1 300 nm OPTICAL FIBER COMM UNICATIONS 4> 100 //m GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5100 is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission


    OCR Scan     		PDF NDL5100 NDL5200 NDL5100C NDL5102C NDL5100P* NDL5102P*

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 1998 group Lucent Technologies Bell Labs Innovations LG 1628AX A SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 G bits/s ■ High gain: 5.8 k i l transim pedance ■ C om ple m e ntary 50 i l


    OCR Scan     		PDF 1628AX LG1628AXA 1628BXA*

    Untitled

    Abstract: No abstract text available
    Text: m i c r o e l e c t r o n i c s group Preliminary Data Sheet October 1999 Lucent Technologies Bell Labs Innovations TTIA0110G 10 Gbits/s Transimpedance Amplifier Features Functional Description • High data rate The Lucent Technologies Microelectronics Group


    OCR Scan     		PDF TTIA0110G OC-192/STM-64. 0G50G2b 004073b S-8205 0G40737 TTIA0110GA

    S4315

    Abstract: APD reverse bias stability C5331 Si apd photodiode 10NAX S2385 52384 kap06 Si apd photodiode rangefinder S2381
    Text: Si APDs Type No. Low-bias Operation Types, for 800 nm Range Dimensional O utline (P.46, 47)/ W indow M a te ria l-1 Package S2381 Effective '3 Effective Active Area Active Size Area (mm) (mm2) Ô0.2 0.03 (J)0.5 0.19 (>1.0 0.78 <t>1.5 1.77 Spectral Response


    OCR Scan     		PDF S2381 S2382 S5139 S2383 S2383-10 S3884 S2384 S2385 S2383-10 C5460 S4315 APD reverse bias stability C5331 Si apd photodiode 10NAX S2385 52384 kap06 Si apd photodiode rangefinder

    dl520

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission


    OCR Scan     		PDF bM27SES NDL5102 L427SES NDL5102 NDL5102C DL5200 NDL5100 NDL5100C NDL5100P* dl520