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    DEVICE MARKING CODE SOT23-5 MOSFET Search Results

    DEVICE MARKING CODE SOT23-5 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    DEVICE MARKING CODE SOT23-5 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd diode marking Ja sot

    Abstract: No abstract text available
    Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide


    Original     		CJ3404-HF OT-23 OT-23, MIL-STD-750, QW-JTR05 smd diode marking Ja sot PDF

    MOSFET TRANSISTOR SMD MARKING CODE

    Abstract: MOSFET marking smd
    Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide


    Original     		CJ3404-HF OT-23 OT-23, MIL-STD-750, QW-JTR05 MOSFET TRANSISTOR SMD MARKING CODE MOSFET marking smd PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		DMN3112S AEC-Q101 J-STD-020 MIL-STD-202, PDF

    BSS127S

    Abstract: K29 mosfet BSS127 K28 SOT23
    Text: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage


    Original     		BSS127 DS35476 BSS127S K29 mosfet BSS127 K28 SOT23 PDF

    DIODES K29

    Abstract: No abstract text available
    Text: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C • Low Input Capacitance High BVDss rating for power application 600V 160Ω @ VGS = 10V SC59 SOT23 • 70mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		BSS127 AEC-Q101 DS35476 DIODES K29 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original     		BSS84 -130mA AEC-Q101 DS30149 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary 20V • Low On-Resistance RDS ON max ID max TA = +25°C • Low Input Capacitance • Fast Switching Speed 21mΩ @ VGS = 10V 6.5A • Low Input/Output Leakage 25mΩ @ VGS = 4.5V


    Original     		DMG3420U AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Comchip MOSFET SMD Diode Specialist CJ3401-HF P-Channel Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -P-Channel -High dense cell design for extremely low RDS(ON) 3 -Exceptional on-resistance and miximum DC current


    Original     		CJ3401-HF OT-23 OT-23, MIL-STD-750, QW-JTR04 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		BSS84 -130mA AEC-Q101 DS30149 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		BSS84 -130mA AEC-Q101 DS30149 PDF

    DS30149

    Abstract: BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		BSS84 -130mA AEC-Q101 DS30149 BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 122m @ VGS = -10V -2.7A  Low Input Capacitance 190m @ VGS = -4.5V -2.0A  Fast Switching Speed


    Original     		DMP3160L AEC-Q101 -10V/-4 PDF

    BSS84Q-7-F

    Abstract: BSS84 Equivalent K84 SOT23 BSS84Q BSS84Q-13-F BSS84
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		BSS84 -130mA AEC-Q101 DS30149 BSS84Q-7-F BSS84 Equivalent K84 SOT23 BSS84Q BSS84Q-13-F BSS84 PDF

    device marking code sot23-5 mosfet

    Abstract: No abstract text available
    Text: Comchip MOSFET SMD Diode Specialist CJ3401-HF P-Channel Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -P-Channel -High dense cell design for extremely low RDS(ON) 3 -Exceptional on-resistance and miximum DC current


    Original     		CJ3401-HF OT-23 OT-23, MIL-STD-750, QW-JTR04 device marking code sot23-5 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package


    Original     		2N7002A AEC-Q101 OT-23 OT-23 J-STD-020D MIL-STD-202, DS31360 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery


    Original     		DMN3730U AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C


    Original     		DMN2300U AEC-Q101 PDF

    BSS127

    Abstract: marking D09 BSS127S
    Text: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits • • • • • ID RDS ON V(BR)DSS TA = 25°C 600V Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1)


    Original     		BSS127 DS35476 BSS127 marking D09 BSS127S PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original     		2N7002 210mA AEC-Q101 DS11303 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original     		2N7002 210mA AEC-Q101 DS11303 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original     		2N7002 210mA AEC-Q101 DS11303 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		BSS84 -130mA AEC-Q101 DS30149 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 PDF

    K23 SOT23 MARKING

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating


    Original     		BSS123 DS30366 K23 SOT23 MARKING PDF