DF 331 TRANSISTOR
Abstract: transistor df 331
Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type l/bs b f l DS on Package Ordering Code BUZ 331 500 V 8A 0.8 n TO-218 AA C67078-S3114-A2 Maxim um Ratings Parameter Symbol Continuous drain current b Values
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O-218
C67078-S3114-A2
fi23SbD5
Gfl47b7
0Dfi47bÃ
DF 331 TRANSISTOR
transistor df 331
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sdt9303
Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
Text: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @
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2N3441
2N3054
2N6258
MIL-S19500/
2N3055
2N3441
2N3442
2N3771
2N3772
sdt9303
2N3441 JAN
2N3772 SOLITRON
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DF 331 TRANSISTOR
Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-218AA
C67078-S3114-A2
00--------V
O-218AA
DF 331 TRANSISTOR
D F 331 TRANSISTOR
transistor d 331
transistor df 331
C 331 Transistor
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DF 331 TRANSISTOR
Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR
Text: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S
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0D02ST3
DF 331 TRANSISTOR
transistor df 331
d 331 TRANSISTOR equivalent
transistor b 1560
C 331 Transistor
transistor h 331
y 331 Transistor
transistor B A O 331
transistor 331 p
D F 331 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 324 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Vbs th = 1-5 .2.5 V Type VDS b f lDS(on) Package Marking BSP 324 400 V 0.17 A 25 n SOT-223 BSP 324 Type BSP 324 Ordering Code Q67000-S215 Tape and Reel Information
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OT-223
Q67000-S215
E6327
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 324 SIPM OS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 v Type VDS BSP 324 400 V Type BSP 324 Ordering Code Q67000-S215 0.1 7 A ^DS(on) Package Marking 25 a SOT-223 BSP 324 Tape and Reel Information E6327
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Q67000-S215
OT-223
E6327
053SbOS
fl235bOS
0GflbG22
D0flb023
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BUZ 336
Abstract: No abstract text available
Text: SIEMENS BUZ 50 A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 A Vos 1000 V b 2.5 A RfiSlon 5C2 Package Ordering Code TO-220 AB C67078-A1307-A3 Maximum Ratings Parameter Symbol Drain source voltage W)S Drain-gate voltage '' dgr
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O-220
C67078-A1307-A3
BUZ 336
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Untitled
Abstract: No abstract text available
Text: N E C ELE CTR ON IC S INC 6 4 2 7 5 2 5 N E C E L E C T R O N I C S INC Tfl MOS dF | bi»57SaS OOITDHI S | ~ 9 8 D 19031 D j FIELD EFFECT TRANSISTOR ELECTRON DEVICE \ _ FAST SWITCHING P-CHANNEL S IL IC O N POWER 2J±a2 s.o±a 2 zi FET
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57SaS
CHASACTE21STICS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h ^DS on Package Ordering Code 5.3 A 2w TO-218AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit
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O-218AA
C67078-S3108-A2
flB35bG5
O-218
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Transistor motorola 418
Abstract: MRF1500 motorola rf Power Transistor Transistor motorola 277 10-04 MOTOROLA TRANSISTOR
Text: MOTOROLA Order this document by MRF1500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1500 Motorola Preferred Device Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz
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MRF1500/D
MRF1500
MRF1500/D*
Transistor motorola 418
MRF1500
motorola rf Power Transistor
Transistor motorola 277
10-04 MOTOROLA TRANSISTOR
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BUK436-100B
Abstract: BUK436-100A
Text: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK436-1OOA/B
BUK436
-100A
-100B
125sJ
CJ0304b4
BUK436-100B
BUK436-100A
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lidar ACC
Abstract: airbag
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . capacitors VJ.31 / VJ.34 • Automotive Applications • Product Range • AEC-Q200 Testing • Part Numbering w w w. v i s h a y. c o m instructional G uide Vishay Vitramon Automotive MLCC s Surface-Mount Multilayer
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AEC-Q200
AEC-Q-200
VMN-SG2142-0808
lidar ACC
airbag
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CDR03 receiver module
Abstract: CDR03 receiver 9926 mosfet Optoelectronics Device data Zener diode smd marking code 621 "Piezoelectric Sensor" sun chemical un 1210 array resistor 9926 ceramic disc 104 aec capacitors Zener diode smd marking code w1
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book surface mount MUltilayer Ceramic chip capacitors vishay vse-db0097-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0097-0805
CDR03 receiver module
CDR03 receiver
9926 mosfet
Optoelectronics Device data
Zener diode smd marking code 621
"Piezoelectric Sensor"
sun chemical un 1210
array resistor 9926
ceramic disc 104 aec capacitors
Zener diode smd marking code w1
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DF 331 TRANSISTOR
Abstract: No abstract text available
Text: MOTOROLA sc -c xstrs /r f > 13E D I t,3 b ? E S 4 □Df l TSt . T T -n -ty 1 | Order this data sheet by MG100BZ100/D MOTOROLA I SEMICONDUCTOR • 8 9 TECHNICAL DATA MG100BZ100 Isolated Gate Bipolar Power Transistor Module Energy M anagem ent Series D U A L N-CH ANN EL
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MG100BZ100/D
MG100BZ100
MK145BP,
C56937
DF 331 TRANSISTOR
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real time microprocessor 8253 applications
Abstract: ic 8253 rtc M40Z111 M40Z300 M48T201V M48T201Y M4Z28-BR00SH1 M4Z32-BR00SH1 SOH28 SOH44
Text: New Controllers Turn Low Power SRAMs into Non-Volatile RAMs First devices in a family of surface-mount Controllers in the SNAPHAT package that address the needs for high density non-volatility with a substantially lower cost structure. NVRAM CONTROLLERS IN SNAPHAT
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D-30916
D-90449
FLNVRAM/0798
real time microprocessor 8253 applications
ic 8253 rtc
M40Z111
M40Z300
M48T201V
M48T201Y
M4Z28-BR00SH1
M4Z32-BR00SH1
SOH28
SOH44
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IL221AT
Abstract: IL222AT IL223AT RS481A 223AT
Text: IL221AT/222AT/223AT Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES A 1 8 NC • Isolation test voltage, 4000 VRMS C 2 7 B NC 3 6 C • Industry standard SOIC-8 surface mountable package
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IL221AT/222AT/223AT
RS481A)
i179022
IL221AT/IL222AT/IL223AT
18-Jul-08
IL221AT
IL222AT
IL223AT
RS481A
223AT
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DSP56300
Abstract: DSP56303 G38-87 AA0482
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or
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DSP56303
AA0500
DSP56303/D
DSP56300
G38-87
AA0482
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Response AA0482
Abstract: AA0463 AA0470 AA0482 284 278 DSP56300 DSP56302 G38-87 AA-0481 AA0460
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56302 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56302 specifications are preliminary and are from design simulations, and may not be fully tested or
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DSP56302
AA0500
DSP56302/D
Response AA0482
AA0463
AA0470
AA0482
284 278
DSP56300
G38-87
AA-0481
AA0460
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Untitled
Abstract: No abstract text available
Text: IL221AT/222AT/223AT Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES A 1 8 NC • Isolation test voltage, 4000 VRMS C 2 7 B NC 3 6 C • Industry standard SOIC-8 surface mountable package
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IL221AT/222AT/223AT
RS481A)
2002/95/EC
2002/96/EC
i179022
IL221AT/IL222AT/IL223AT
2011/65/EU
2002/95/EC.
2011/65/EU.
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331 Optocoupler
Abstract: IL221AT IL222AT IL223AT RS481A
Text: IL221AT/222AT/223AT Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES A 1 8 NC • Isolation test voltage, 4000 VRMS C 2 7 B NC 3 6 C • Industry standard SOIC-8 surface mountable package
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IL221AT/222AT/223AT
RS481A)
i179022
IL221AT/IL222AT/IL223AT
11-Mar-11
331 Optocoupler
IL221AT
IL222AT
IL223AT
RS481A
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Untitled
Abstract: No abstract text available
Text: IL221AT/222AT/223AT Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES A 1 8 NC • Isolation test voltage, 4000 VRMS C 2 7 B NC 3 6 C • Industry standard SOIC-8 surface mountable package
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IL221AT/222AT/223AT
RS481A)
i179022
IL221AT/IL222AT/IL223AT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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TIP 41 transistor pin configuration
Abstract: FSK 9600 qmx05 SR-232 SM224ATL 1/929 rev oh s26
Text: SM224ATF e SM224ATF SocketModem Family Rockwell INTRODUCTION The Rockwell SM224ATF is a combination V.22 bis data and Group 3 facsimile fax CMOS modem in a compact socketmountable module. This complete solution allows OEMs to bring new features to market immediately, with minimal
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SM224ATF
SM224ATF
SM224ATL
TIP 41 transistor pin configuration
FSK 9600
qmx05
SR-232
1/929 rev oh s26
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Untitled
Abstract: No abstract text available
Text: ILCT6/ MCT6 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel Features • Current Transfer Ratio, 50 % Typical • Leakage Current, 1.0 nA Typical • Two Isolated Channels Per Package Agency Approvals • UL - File No. E52744 System Code H or J
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E52744
VDE0884)
IEC60950
IEC60965
i179016
D-74025
04-Dec-03
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IL7660
Abstract: DF 331 TRANSISTOR
Text: IL766/ ILD766 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, AC Input, Internal RBE Features • • • • • • • Internal RBE for Better Stability BVCEO > 60 V AC or Polarity Insensitive Inputs Built-In Reverse Polarity Input Protection
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IL766/
ILD766
2002/95/EC
2002/96/EC
i179039
UL1577,
E52744
IEC60950
IEC60965
IL766
IL7660
DF 331 TRANSISTOR
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