diode AY 101
Abstract: IPD50R520CP
Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V*EL;HI<?=JG;E<C;G?I0IHM/Y V3BIG7BEL=7I;9>7G=; V"19N\_Si //* P R>M#a`$&_Si * /,* +- `= QY&ejb V#MIG;C;:K :IG7I;: V&?=>F;7A9JGG;DI97F78?B?IN
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IPD50R520CP
97F78
799EG:
87BB7HI
diode AY 101
IPD50R520CP
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A5 GNA
Abstract: 2A930
Text: <9.$+7* /' 330 = 3:)5!5%26-6735 2EASTQE +;LG;KEBJI?ED7GN>?=>KEBI7=;I;9>DEBE=N 09 O ,=L"a`# *(0 )= 1(- 9 2BIG7BEL=7I;9>7G=; -;G?E:?97K7B7D9>;G7I;: I'MH,*'- I'MH,*
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97F78
F79A7=
7G79I
A5 GNA
2A930
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Untitled
Abstract: No abstract text available
Text: 9?3-'@*/,4? 4VVS=>AB=#:A0<&<,9=4=>:< #<:/?.>%?88,<C 7LHZ[XLY - "1 2\&_Si V*EL;HI<?=JG; E< C;G?I0 IHM/Y + >M#a`$&_Si V3BIG7BEL=7I;9>7G=; * Y&ejb 0/* P * -2/ +1 `= V&?=>F;7A9JGG;DI97F78?B?IN V/J7B?<?;:for industrial grade applications 799EG:?D=IE(#"#!
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97F78
799EG:
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D649
Abstract: CA64 246DH DFJI
Text: :?AED/@EDAED 4@?64D@BC ^WZ_Yc[X \WX] X`_YXc`ab 56C4B:AD:@? >GMTKYOI PGIQ IUTTKIYUWX GWK NOMNR^ OTYKMWGYKJ JK[OIKX YNGY IUSHOTK TKY\UWQ SGMTKYOIX GTJ B;01 IUTTKIYUWX. :T GJJOYOUT YU IUTTKIYO[OY^, SGMTKYOI PGIQX VWU[OJK XOMTGR IUTJOYOUTOTM, KRKIYWUSGMTKYOI OTYKWLKWKTIK XZVVWKXXOUT GTJ
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56C4B
762DEB6C
e12xeikllu
xJG78
/79A7=
9N9B78B;
D649
CA64
246DH
DFJI
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Untitled
Abstract: No abstract text available
Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R399CP
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samxon GR
Abstract: ce-df dh-bh DFJI
Text: GR R^kb^l RmZg]Zk].ymJ/ FEASTQER 63 Hb`a CU oZen^1 `nZkZgm^^ 7555 akl ehZ] eb_^ Zm =:uC 73 Rnbm _hk nl^ bg ^e^\mkhgb\ \bk\nbml bg \hehnk SU k^\^bo^k1 ob]^h\h]^k ^m\3 cQ]h_^ CBB@V H@Ef cQ]h_^ E@E@V FGBf ROECIFICASINMR Im^f O^k_hkfZg\^ CaZkZ\m^kblmb\l _zo|k~sxq dowzo|k~*|o bkxqo
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g7da-28z 8a
Abstract: g7da-28(z) 8a
Text: 4D>+ 05 %>A7#%(G&%>A7;=@G(;/:(75</: ?/<@7@A=? &?=2B1A(B;/?F 8OK]^[O\ B @ &,) ,) M . ?KS 1 1) .0 _ . ?KS 1 *,) 2, &+') +', ECFB;C;DI7GN,*9>7DD;B !D>7D9;C;DICE:; . <K (E=?9B;K;B 1G7I;:
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799EG:
g7da-28z 8a
g7da-28(z) 8a
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JG Diode
Abstract: diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R520CP
JG Diode
diode EZD
jg transistor
T1027
f7 transistor
MARKING 7C
DIODE marking 7b
PG-TO252-3
transistor 7g
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we 9d
Abstract: No abstract text available
Text: 4D>+ 05 % >A7# % ( G & % >A7; =@G ( ; /: ( 75</: ?/<@7@A=? & ?=2 B1A( B; ; /?F 8OK]^[O\ B @ &,) ,) M . ?K S 1 1) .0 _" . ?K S 1 *,) 2, &+') +', # EC FB;C ;DI7GN, * 9>7DD;B # !D>7D9;C ;DIC E: ; . <K # ( E=? 9 B;K;B 1 G7I ;: + <K"a`#%_Si
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Untitled
Abstract: No abstract text available
Text: 9?3-'@*/,4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - "1 V *EL;HI<?=JG; E< C ;G?I0 IH M / Y + >M#a`$&_Si V 3 BIG7 BEL =7I ;9 >7G=; * Y&ejb 2 \&_Si 0/* P * -2/ " +1 `= V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V / J7B ?<?;: for industrial grade applications 79
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PZ-V1
Abstract: DFJI 1Z10
Text: ^:_[a6~1 h~|} s/zzy p0.|0v,vw+z m.2~.- c.-20.+z0 ^:_[a6~1 }~|} 1/zzy /0.|0v,vw+z ,.2~.- x.-20.+z0 YaZ c.3-2z0 9fzv230z1 ^*7Mg m*{O >?=>fHF;: EF;G7I?ED ^m EF;G7I?ED CE:;H s /97De vEDI?DJEJHe |D:;Me -GE=G7C ^jk 9EDIGEB 9ECC7D: 7D: om HI;FH E< EF;G7I?EDH
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9fzv230z1
/97De
9I78B;
vfk01fklkc
Wcv32~
30SZKU
AB-0107
p0z1130z
PZ-V1
DFJI
1Z10
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DFJI
Abstract: No abstract text available
Text: 9?3-'@ 004? 4VVS=>Aa # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - "1 V *EL;HI<?=JG; E< C ;G?I0 IHiKY 2 \&_Si 0/* + >M#a`$&_Si V 3 BIG7 BEL =7I ;9 >7G=; P *(+33 " * Y&ejb -B `= V # MIG ;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V / J7B ?<?;: for industrial grade applications 79
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Untitled
Abstract: No abstract text available
Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R520CP
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MHO 23
Abstract: LMKK d888e
Text: ?=H23 +A>.23=, HEB@; HI9I< G<B9M =RO]^[R\ _ okkk6 >C?F?=NLC= MNL?HANB _ 1BINI CMIF;NCIH _ :?LI =LIMM IL L;H>IG NOLHhIH _ 2?GIP;<F? @CHA?L JLII@ =IP?L ;P;CF;<F? }CF? /Iu |lnoplr _ {IO<F? 3z2 xz IONJON _ 1;H?F GIOHN _ {z IL xz =IHNLIF _ 2I*3 =IGJFC;HN }CF? /Iiu ,pkkqlokp
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ed7c
Abstract: No abstract text available
Text: 3CC/ -?G $ =@6" $ ' F ' : .99' 64;.9(>.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J V ) 9>7DD;B ' ;J"a`#$_Si V D>7D9;C ;DIC E: ; V 0 BIG7 ' E=?9 B;K;B 1 G7I;: *( M ) >J 1 ).( _" ) >J 1 *,( $; )&, 7 V K7B7D9>; G7I;: V , J7B?<?;: 799EG: ?D= IE
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th296
Abstract: nis09
Text: <9.$+7* /' 330 = 3: )5! 5%26-6735 2EASTQE %$+ ;L G;KEBJI?ED7GN >?=> KEBI7=; I;9>DEBE=N % 2 BIG7 BEL =7I; 9>7G=; %$- ;G?E: ?9 7K7B7D9>; G7I;: I$'MH,*'- 09 %$" O ,=L"a`# *(0 ! )= 1(- 9 !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!I$'MH,*
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DFJI
Abstract: JG marking diode EZD transistor 7g
Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R399CP
/L-33J
DFJI
JG marking
diode EZD
transistor 7g
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we 9d
Abstract: k17c DFJI
Text: 4D>* -5 % >A7# % G % >A7# % ( G & ( ; /: ( 75</: )?/<@7@A=? & ?=2 B1A( B; ; /?F 8OK]^[O\ B @ &+) +) M . ?K S 1 *.) *-) _" . ?K S 1 +1) +.) &*'. *'. # EC FB;C ;DI7GN, * 9>7DD;B . <K # !D>7D9;C ;DIC E: ; + <K"a`#%_Si / JF;G( E=? 9 B;K;B 1 G7I
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2SC16
Abstract: No abstract text available
Text: TOSHIBA { D I S C R E TE /O PT O} 3T • - DËTjTOTTaSO □ OOlfH'í 2 - 1 9097250 TOSHIBA DI SC R E T E / O P T O > 39C 01899 □ SEMICONDUCTOR TECHNICAL DATA * 2 b ? * ì? a * TOSHIBA TRANSISTOR 2S01677 SILICON NPN EPITAXIAL PLANAR INDUSTRIAL APPLICATIONS
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2S01677
270UHz)
2SC16
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2SK168
Abstract: VUME
Text: HITACHI 2SK168-SILICON N-CHANNEL JUNCTION FET VHF AMPLIFIER. MIXER, LOCAL OSCILLATOR 1 I 1 _ 1 1 . 1 1 l _ } IVixn. in rrirn JEDEC TO-92) • ABSOLUTE MAXIMUM RATINGS (Ta-25*C) [tern Symbol MAXIMUM CHANNEL POWER DISSIPATION CURVE
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2SK168
Ta-23
2SKI68
-30FIGURE
2SK168
VUME
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DMP-16
Abstract: NJM2223 NJM2223M
Text: □ < X ^ H1 <* < w äQ n; n; ä «a < H' g * i S e a- M» V £? s 5 H m CMOSEKi mm CMOSEit *üf¥B m - Ÿ 9 ~Ç \i, .& •i± o ^ 00 « ^ 03 VI . o n ; o. u. en >4 • Î O 'a A ’ 1t£T V\ V ^ * Œ >* A ojo o|n ít d 1i nüE
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NJM2223
NJM2223
DMP-16
NJM2223M
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10k multiturn preset
Abstract: n500 W111 ADC87 ADC87H MN346 ANA 618
Text: ADC87 y 12-Bit, 8/iSec MILITARY A/D CONVERTER • ■ MICRO NETWORKS FEATURES • F ully G uaranteed - 5 5 ° C to +125°C O peration • fyisec Max C onversion Tim e • C om plete/Versatile A/D F unction: Internal o r External C lock Internal Reference U ser-O ptional In pu t B uffer
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OCR Scan
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ADC87
12-Bit,
20ppm/Â
ADC84/85
MIL-H-38534
MIL-STD-1772
ADC87
10k multiturn preset
n500
W111
ADC87H
MN346
ANA 618
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T460
Abstract: No abstract text available
Text: 2SD923 Ë ± ' < r7 - h 7 > i > X ? TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH 3 TRANSISTOR ¡ UBT INDUSTRIAL USE POWER SUPPLY : O utline D ra w in g s * Features • Ultra high/? • hFE<7)U—T ' Î T ' l i ? E x c e l l e n t linearity in hFE • A S O ^ JÎl'
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2SD923
SC-65
I95t/R89)
T460
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Untitled
Abstract: No abstract text available
Text: ZONE 2 LTR A b C C/> F - - 3 3 g 4/4 _ S y iS ttT V Y A M P IN C O R P O R A T E D . A1_L R IG H T S R E S E R V E D . A M P P R O D U C T S CO V ER ED SY P A T E N T S A ND / OR P A T E N T S P E N D IN G . 1 1 R E V IS IO N S D E S C R IP T IO N .ZAO C*A *VAS
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