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    DG-34 TRANSISTOR Search Results

    DG-34 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    DG-34 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    8204E

    Abstract: 8204
    Text: S DG 8204 S amHop Microelectronics C orp. December , 2002 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		300us 8204E 8204 PDF

    marking code B9 DG SMD

    Abstract: smd diode B3 SOT23 SMD z6 SMD CODE PACKAGE SOT23 489 MARKING 43 SOT23 REGULATOR SMD EK 742 BZX84C3v6 MARKING CODE SMD s1 sot23 BZX84B5V1 SOT23 NXP power dissipation TO-236AB
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW


    Original     		M3D088 BZX84 BZX84-A BZX84-C4V3 BZX84-C4V7 BZX84-C51 BZX84-C56 BZX84-C5V1 BZX84-C5V6 marking code B9 DG SMD smd diode B3 SOT23 SMD z6 SMD CODE PACKAGE SOT23 489 MARKING 43 SOT23 REGULATOR SMD EK 742 BZX84C3v6 MARKING CODE SMD s1 sot23 BZX84B5V1 SOT23 NXP power dissipation TO-236AB PDF

    Zener diode smd marking code S3

    Abstract: SMD CODE MARKING s7 SOT23 Zener diode smd marking code 621 triac 214 215 216 BZX84C5V1 spice smd z70 smd diode B3 SOT23 Z3 marking Zener diode smd marking S4 SMD CODE PACKAGE SOT23 486
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW


    Original     		M3D088 BZX84 BZX84-A X84-C5V1 BZX84-C5V6 BZX84-C62 BZX84-C68 BZX84-C6V2 BZX84-C6V8 Zener diode smd marking code S3 SMD CODE MARKING s7 SOT23 Zener diode smd marking code 621 triac 214 215 216 BZX84C5V1 spice smd z70 smd diode B3 SOT23 Z3 marking Zener diode smd marking S4 SMD CODE PACKAGE SOT23 486 PDF

    NXP date code marking

    Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
    Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview


    Original     		PMBT2222; PMBT2222A O-236AB) PMBT2222 PMBT2222A O-236AB PMBT2907 PMBT2907A NXP date code marking marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PDF

    C621

    Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF

    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029 PDF

    SMD Marking Code 43a

    Abstract: BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF
    Text: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


    Original     		BC640; BCP53; BCX53 BC640 BCP53 SC-43A SC-73 SC-62 O-243 SMD Marking Code 43a BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF PDF

    2N5508

    Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N5508 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551 PDF

    SA2713

    Abstract: MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. /AT-10uV/deg SA2720* SA2721 SA2722* SA2723* SA2724* /AT-10uV/dea SA2713 MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A PDF

    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF

    P1027

    Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V P1027 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B PDF

    pj 89 diode

    Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
    Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­


    OCR Scan     		O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89 PDF

    K1502

    Abstract: l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. I I MIN. M A X Pc T 6 T T IDER A TE F R E E I'A E I J to C


    OCR Scan     		NPN110. R038q UC300 UC305 UC310 UC315 UC320 UC325 UC330 UC335 K1502 l61c BFX82 K1501 2N4088 2N3113 RN1030 2N3379 RN1030A l53b 5 PDF

    K1502

    Abstract: Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. B170024 4000n K1502 Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B PDF

    Untitled

    Abstract: No abstract text available
    Text: 34 M O T O R O L A SC i D I O D E S / O P T O l 6 3 6 7 2 5 5 MOTOROLA SC ÖF^LBb7aSS DI ODES/ OPTO 34C DDBöaS? t 38257 D SOT23 (continued) DEVICE NO. BCW67A,B,C, BCW68F,G,H SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C I I • Designed for low-frequency driver stage as well as switching


    OCR Scan     		BCW67A BCW68F BCW67 BCW67B BCW67C BCW68 BCW68G BCW68H PDF

    BCW67B Motorola

    Abstract: 68g diode BCW67B marking 68g BCW65 BCW66 BCW67 BCW67A BCW67C BCW68
    Text: MOTOROLA 34 SC i D I O D E S / O P T O * 6367255 MOTOROLA SC DiT|b3b7aSS D IO D E S /O P T O 34C D D B ö a S ? L. 38257 SOT23 (continued) DEVICE NO. BCW67A,B,C, BCW68F,G,H SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C I I • Designed for low-frequency driver stage as well as switching


    OCR Scan     		ti3ti72S5 BCW67A BCW68F BCW65 BCW66 BCW67 BCW67B BCW67C BCW68 BCW67B Motorola 68g diode marking 68g PDF

    U22 2.5A 250V

    Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 U22 2.5A 250V P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644 PDF

    TO-220AB transistor package

    Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K
    Text: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C


    Original     		94545B IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB TO-220AB transistor package C-150 IRGB8B60K IRGS8B60K IRGSL8B60K PDF

    MMT4416

    Abstract: No abstract text available
    Text: 34 MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC DIODES/OPTO 34C 38235 T '-' J f - '- i - S ' MICRO-T (continued) MMT4416 — N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR • designed for VH F/UHF amplifier applications MAXIMUM RATINGS Rating Unit 30 Vdc


    OCR Scan     		MMT4416 MMT4416 PDF

    SAM4S-EK2 User Guide

    Abstract: MT29F2G08ABAEA MP179P
    Text: SAM4S-EK2 . User Guide 11176A–ATARM–24-Sep-12 Section 1 Introduction .1-1


    Original     		1176Aâ 24-Sep-12 SAM4S-EK2 User Guide MT29F2G08ABAEA MP179P PDF

    mmt4416

    Abstract: No abstract text available
    Text: 34 MOTOROLA SC -CDIODES/OPTOJ 6 3 6 7 2 5 5 M O T O R O L A SC DIODES/OPTO 34C 3 8 2 3 5 D T - Jf-'-z-s' MICRO-T (continued) MMT4416 — N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR • designed for VHF/UHF amplifier applications M AXIM UM RATINGS Rating Value


    OCR Scan     		MMT4416 mmt4416 PDF

    S4 2A

    Abstract: PU3117 PU4117 PU4417 Ffjp
    Text: Power Transistor Arrays PU3117, PU4117, PU4417 PU3117, PU4117, PU4417 Package Dim ensions PU3117 Unit! m m Silicon NPN Triple-Diffused Planar Type 4.2max. 20. 5max. Power Am plifier, Switching 0.8 ~ 0.25 • Features 0 . 5 - 0.15 , ! I « i.fl .0. 23 ~ — 2.54 : . 3.2 '


    OCR Scan     		PU3117, PU4117, PU4417 PU3117: PU4117: PU4117 S4 2A PU3117 PU4417 Ffjp PDF

    4-wire to 2-wire hybrid

    Abstract: digital relay 12v 3a datasheet AN549 AN9607 HC4P5524-9 HC-5524 HC9P5524-5
    Text: HC-5524 TM Data Sheet February 1999 FN2798.6 EIA/ITU 24V PABX SLIC with 25mA Loop Feed Features The HC-5524 telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation DI


    Original     		HC-5524 FN2798 HC-5524 4-wire to 2-wire hybrid digital relay 12v 3a datasheet AN549 AN9607 HC4P5524-9 HC9P5524-5 PDF

    AN549

    Abstract: AN9607 HC4P5524-9 HC-5524 HC9P5524-5
    Text: HC-5524 Data Sheet February 1999 File Number 2798.6 EIA/ITU 24V PABX SLIC with 25mA Loop Feed Features The HC-5524 telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation DI


    Original     		HC-5524 HC-5524 AN549 AN9607 HC4P5524-9 HC9P5524-5 PDF