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    DIAGRAM OF 2000 WATTS POWER AMP Search Results

    DIAGRAM OF 2000 WATTS POWER AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    DIAGRAM OF 2000 WATTS POWER AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and


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    PDF JMC5701 220ohm 220ZTR 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PTF 10043 GOLDMOS Field Effect Transistor 12 Watts, 1.9–2.0 GHz Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device


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    PDF P4917-ND P5276 1-877-GOLDMOS 1522-PTF

    static var compensator

    Abstract: HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240
    Text: Mitsubishi Thyristor FT1500AU-240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts J x K (BOTH SIDES) H TYP GATE (WHITE) G TYP AUX CATHODE POTENTIAL CONNECTOR (RED) F


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    PDF FT1500AU-240 Amperes/12000 2000V) 1050mA static var compensator HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240

    Untitled

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization


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    PDF 1-877-GOLDMOS 1522-PTF

    STATIC VAR COMPENSATOR

    Abstract: 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A
    Text: Mitsubishi Ultra High Voltage Thyristors / Diodes FT1500AU-240 FD2000DU-120 1500 Amperes / 12000 Volts (2000 Amperes / 6000 Volts) Mitsubishi Ultra High Voltage Thyristors are used in high voltage AC Switch and Static Var Compensator (SVC) applications.


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    PDF FT1500AU-240 FD2000DU-120 Amperes/12000 STATIC VAR COMPENSATOR 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A

    G200

    Abstract: f 0952
    Text: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


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    PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200 f 0952

    0.047 mf capacitor

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10137 Field Effect Transistor 12 Watts, 1.0 GHz Description The PTF 10137 is a 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


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    PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF 0.047 mf capacitor

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 500 watt power circuit diagram capacitor siemens 4700 35 G200 10136
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold


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    PDF 220ohm, 1-877-GOLDMOS 1522-PTF 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 500 watt power circuit diagram capacitor siemens 4700 35 G200 10136

    J107-2

    Abstract: 100A0R5BW 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM A113 A114 A115 AN1955 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 0, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


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    PDF MHV5IC1810N MHV5IC1810N MHV5IC1810NR2 J107-2 100A0R5BW 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM A113 A114 A115 AN1955 AN1987 C101 JESD22

    ATC 1084

    Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage


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    PDF MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 ATC 1084 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100NBR1

    OZ 9976

    Abstract: 7433 7433 diagram DL1020 DL805 MERA-533 MERA-556 MERA-7433 MERA-7456 AN-60-032
    Text: Application Note AN-60-032 Uses and Advantages of “MERA” Dual Matched MMIC Amplifiers 1.0 Introduction The Mini-Circuits ERA and Gali series of amplifiers are monolithic HBT devices in Darlington configuration. They are wide band 50-ohm amplifiers that are easy to use, as they require very few external components. Wide


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    PDF AN-60-032) 50-ohm AN-60-032 M94453 AN60032 OZ 9976 7433 7433 diagram DL1020 DL805 MERA-533 MERA-556 MERA-7433 MERA-7456

    MW7IC18100NR1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 3, 3/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage


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    PDF MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

    transistor rf m 9837

    Abstract: No abstract text available
    Text: e PTF 10114 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 12 watts power output. Nitride surface


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    PDF G-200, 1-877-GOLDMOS 1301-PTF transistor rf m 9837

    OZ 960 S

    Abstract: 10149 OZ 960 G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM gsm amplifier
    Text: PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched 70–watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50% efficiency and 16 dB typical gain.


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    PDF P5182-ND P4525-ND 1-877-GOLDMOS 1522-PTF OZ 960 S 10149 OZ 960 G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM gsm amplifier

    MSQ100800

    Abstract: No abstract text available
    Text: 90º HYBRID SURFACE MOUNT MODEL: MSQ100800 1000 - 8000 MHz WIDE BANDWIDTH FEATURES: ► Wide Bandwidth ► Small Package Size, Surface Mount ► Building Block For: - Power Amplifiers - Image Rejection Mixers - I & Q / SSB Modulators - Phase Shifters & More.


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    PDF MSQ100800 MSQ100800

    Untitled

    Abstract: No abstract text available
    Text: 90º HYBRID COUPLER SYNSTRIPTM MODEL MXQ-2023 WIDE BANDWIDTH 2000 - 2300 MHz APPLICATIONS: • High Power Amplifiers • Phase Shifters • I/Q Modulators/Demodulators • Image Reject Mixers • Antenna Beam Formers • Quadripole Networks FEATURES: • Synstrip TechnologyTM


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    PDF MXQ-2023

    capicitor

    Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
    Text: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride


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    PDF 220QBK-ND 1-877-GOLDMOS 1522-PTF capicitor smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19

    100B0R1BW

    Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


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    PDF MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1

    struthers-dunn a314xcx48p

    Abstract: RR3PA-U-AC120V W250ACPX-14 RR3PA-UL-AC120V RR2P-U-AC120V RR2P-UAC120V A314XCX48P RR2P-U-DC24V A314XBX48PL-24A RR2P-UL-AC120V
    Text: OCTAL STYLE 10 AMP GENERAL PURPOSE RELAY CLASS A314 & 250 FEATURES Plug-in, 8 or 11 pin "Octal Style Base" with see thru plastic dust cover. Standard SPDT, DPDT or 3PDT contact arrangements. Other contact arrangements available on special order. Dielectric Strength to 1500 Vrms.


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    PDF E43641 90Max. 40Max. struthers-dunn a314xcx48p RR3PA-U-AC120V W250ACPX-14 RR3PA-UL-AC120V RR2P-U-AC120V RR2P-UAC120V A314XCX48P RR2P-U-DC24V A314XBX48PL-24A RR2P-UL-AC120V

    JX - 638

    Abstract: No abstract text available
    Text: PTF 10138 60 Watts, 960 MHz GOLDMOS Field Effect Transistor Description The PTF 10138 is a GOLDMOS™ FET intended for amplifier applications to 960 MHz. This 60–watt device operates at 48% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold


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    PDF 1-877-GOLDMOS 1301-PTF JX - 638

    3000 watt audio circuit diagram

    Abstract: 300 watts amplifier circuit diagram 4-125A 1500 watt audio amplifier circuit diagram 500 watts amplifier centrifugal blowers varian 4D21 500 watts audio amplifier diagram linear power amplifier
    Text: 4-125A 4D21 RADIAL-BEAM POWER TETRODE • MODULATOR OSCILLATOR AMPLIFIER T E C H N I C A L DATA The EIM AC 4-125A is a radial-beam power tetrode intended for use as an amplifier, oscillator, or modulator. It has a maximum plate-dissipation rating of 125 watts and a maximum plate-voltage rating of 3000 volts at frequencies


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    PDF 400-watt 32max. 3000 watt audio circuit diagram 300 watts amplifier circuit diagram 4-125A 1500 watt audio amplifier circuit diagram 500 watts amplifier centrifugal blowers varian 4D21 500 watts audio amplifier diagram linear power amplifier

    4cx250b

    Abstract: amplifier 4cx250b Eimac 4CX250B Applications 4cx250B tube Eimac 4cx250b scans-048 SK-600 DSAGER00031 eimac 7203
    Text: 4CX250B/7203 Radial Beam Power Tetrode T he Svetlana 4CX250B/7203 is a compact metal/ceramic radial beam tetrode with a plate dissipa­ tion rating of'250 watts with forced-air cooling. The 4CX250B is intended for Class AB SSB linear RF amplifier service. It is


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    PDF 4CX250B/7203 4CX250B 4CX250B/7203 SK600 amplifier 4cx250b Eimac 4CX250B Applications 4cx250B tube Eimac 4cx250b scans-048 SK-600 DSAGER00031 eimac 7203

    3000 watts audio amplifier

    Abstract: audio amplifier 2400 watt
    Text: AMPEREX TRANSMITTING FORCED-AIR TUBE 891 - R ] COOLED Radio Frequency Pow er Am plifier: Class B M odulator MAXIMUM RATINGS AND TYPICAL OPERATING CONDITIONS |


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    PDF 891-R 3000 watts audio amplifier audio amplifier 2400 watt

    C 2371

    Abstract: 044D
    Text: HARRIS SENICOND SECTOR File Number 2344 SbE D • M3D5271 □GMDT'iB SRfi *H A S 044D Series 7 - 3 6-Ampere N-P-N Darlington Power Transistors -2 -9 5 TERMINAL DESIGNATIONS Complementary to the D45D Series 40, 60. and 80 Volts, 30 Watts Gain of 2000 at 1 A


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    PDF M3D5271 O-220AB D44D-serles C 2371 044D