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    DIAGRAM OF 2000 WATTS POWER AMP Search Results

    DIAGRAM OF 2000 WATTS POWER AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    DIAGRAM OF 2000 WATTS POWER AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and


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    PDF JMC5701 220ohm 220ZTR 1-877-GOLDMOS 1522-PTF

    rf mosfet ericsson

    Abstract: 212-136 G200 K1206 mosfet 6 ghz PTF10035
    Text: PTF 10035 30 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10035 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts power output.


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    PDF K1206 1-877-GOLDMOS 1301-PTF rf mosfet ericsson 212-136 G200 K1206 mosfet 6 ghz PTF10035

    capacitor siemens 4700 35

    Abstract: G200 atcb
    Text: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description • • The PTF 10043 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts


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    PDF P4917-ND P5276 1-877-GOLDMOS 1301-PTF capacitor siemens 4700 35 G200 atcb

    G200

    Abstract: No abstract text available
    Text: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device


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    PDF P4917-ND P5276 1-877-GOLDMOS 1522-PTF G200

    Untitled

    Abstract: No abstract text available
    Text: PTF 10043 GOLDMOS Field Effect Transistor 12 Watts, 1.9–2.0 GHz Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device


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    PDF P4917-ND P5276 1-877-GOLDMOS 1522-PTF

    static var compensator

    Abstract: HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240
    Text: Mitsubishi Thyristor FT1500AU-240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts J x K (BOTH SIDES) H TYP GATE (WHITE) G TYP AUX CATHODE POTENTIAL CONNECTOR (RED) F


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    PDF FT1500AU-240 Amperes/12000 2000V) 1050mA static var compensator HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240

    MW6IC1940NB

    Abstract: A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J735
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N - 2 Rev. 4, 3/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage


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    PDF MW6IC1940N MW6IC1940NB MW6IC1940NBR1 MW6IC1940N-2 A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J735

    A113

    Abstract: A114 A115 AN1977 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


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    PDF MW6IC1940GNB MW6IC1940GNBR1 MW6IC1940N-1 A113 A114 A115 AN1977 AN1987 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


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    PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 28cers,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 0, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


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    PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940N

    G200

    Abstract: No abstract text available
    Text: PTF 10111 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure


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    PDF 1-877-GOLDMOS 1301-PTF G200

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MHV5IC1810NR2 The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage


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    PDF MHV5IC1810N MHV5IC1810NR2 MHV5IC1810N

    AN1955

    Abstract: AN1987 MHV5IC1810NR2 J9-33 336 Z11 J1165
    Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage


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    PDF MHV5IC1810N MHV5IC1810N MHV5IC1810NR2 AN1955 AN1987 MHV5IC1810NR2 J9-33 336 Z11 J1165

    G200

    Abstract: PTF10111
    Text: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization


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    PDF 1-877-GOLDMOS 1522-PTF G200 PTF10111

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW6IC2015N Rev. 3, 12/2008 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


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    PDF MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 MW6IC2015N MW6IC2015NBR1

    PTF10111

    Abstract: G200 a1r8
    Text: PTF 10111 GOLDMOS Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization


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    PDF P5182 1-877-GOLDMOS 1522-PTF PTF10111 G200 a1r8

    Untitled

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization


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    PDF 1-877-GOLDMOS 1522-PTF

    IC 2030 schematic diagram

    Abstract: 1800 ldmos class g power amplifier schematic TD-SCDMA A114 A115 AN1977 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


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    PDF MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 MW6IC2015N MW6IC2015NBR1 IC 2030 schematic diagram 1800 ldmos class g power amplifier schematic TD-SCDMA A114 A115 AN1977 AN1987 C101 JESD22

    STATIC VAR COMPENSATOR

    Abstract: 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A
    Text: Mitsubishi Ultra High Voltage Thyristors / Diodes FT1500AU-240 FD2000DU-120 1500 Amperes / 12000 Volts (2000 Amperes / 6000 Volts) Mitsubishi Ultra High Voltage Thyristors are used in high voltage AC Switch and Static Var Compensator (SVC) applications.


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    PDF FT1500AU-240 FD2000DU-120 Amperes/12000 STATIC VAR COMPENSATOR 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A

    3000 watt audio circuit diagram

    Abstract: 300 watts amplifier circuit diagram 4-125A 1500 watt audio amplifier circuit diagram 500 watts amplifier centrifugal blowers varian 4D21 500 watts audio amplifier diagram linear power amplifier
    Text: 4-125A 4D21 RADIAL-BEAM POWER TETRODE • MODULATOR OSCILLATOR AMPLIFIER T E C H N I C A L DATA The EIM AC 4-125A is a radial-beam power tetrode intended for use as an amplifier, oscillator, or modulator. It has a maximum plate-dissipation rating of 125 watts and a maximum plate-voltage rating of 3000 volts at frequencies


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    PDF 400-watt 32max. 3000 watt audio circuit diagram 300 watts amplifier circuit diagram 4-125A 1500 watt audio amplifier circuit diagram 500 watts amplifier centrifugal blowers varian 4D21 500 watts audio amplifier diagram linear power amplifier

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum


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    PDF P4917-N P5276

    300 watts amplifier circuit diagram

    Abstract: Eimac 152th 6hr6 centrifugal blowers 152TH vacuum tube amplifier 812 tube equivalent 700 watts power amplifier circuit diagram I52TH Scans-0017300
    Text: 1 5 2 TH M E D I U M - M U TRI ODE E I T E L - M c C U L L O U G H , I nc. SAN ► BRUNO, • MODU L AT OR OSCILLATOR AMPLIFIER CALIFORNIA The Eimac I52TH is a medium-mu power triode intended for use as an amplifier, oscillator or modulator. It has a maximum plate-dissipation rating of 150 watts and a maximum plate-voltage rating


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    PDF I52TH l52TH 300 watts amplifier circuit diagram Eimac 152th 6hr6 centrifugal blowers 152TH vacuum tube amplifier 812 tube equivalent 700 watts power amplifier circuit diagram Scans-0017300

    4cx250b

    Abstract: amplifier 4cx250b Eimac 4CX250B Applications 4cx250B tube Eimac 4cx250b scans-048 SK-600 DSAGER00031 eimac 7203
    Text: 4CX250B/7203 Radial Beam Power Tetrode T he Svetlana 4CX250B/7203 is a compact metal/ceramic radial beam tetrode with a plate dissipa­ tion rating of'250 watts with forced-air cooling. The 4CX250B is intended for Class AB SSB linear RF amplifier service. It is


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    PDF 4CX250B/7203 4CX250B 4CX250B/7203 SK600 amplifier 4cx250b Eimac 4CX250B Applications 4cx250B tube Eimac 4cx250b scans-048 SK-600 DSAGER00031 eimac 7203

    3000 watts audio amplifier

    Abstract: audio amplifier 2400 watt
    Text: AMPEREX TRANSMITTING FORCED-AIR TUBE 891 - R ] COOLED Radio Frequency Pow er Am plifier: Class B M odulator MAXIMUM RATINGS AND TYPICAL OPERATING CONDITIONS |


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    PDF 891-R 3000 watts audio amplifier audio amplifier 2400 watt