Untitled
Abstract: No abstract text available
Text: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and
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JMC5701
220ohm
220ZTR
1-877-GOLDMOS
1522-PTF
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702 P TRANSISTOR
Abstract: 702 Z TRANSISTOR G200 JMC5701 ghz 100 watts amplifier circuit diagram capacitor 0.1uf DIGIKEY resistor 220ohm
Text: GOLDMOS PTF 10041 Field Effect Transistor 12 Watts, 1.99 GHz Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and
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JMC5701
220ohm
220ZTR
1-877-GOLDMOS
1522-PTF
702 P TRANSISTOR
702 Z TRANSISTOR
G200
JMC5701
ghz 100 watts amplifier circuit diagram
capacitor 0.1uf DIGIKEY
resistor 220ohm
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041 CAPACITOR PHILLIPS
Abstract: G200 PTF 10041 DBX12
Text: GOLDMOS PTF 10041 Field Effect Transistor 12 Watts, 1.99 GHz Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and
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220ohmDigi-Key
220ZTR
1-877-GOLDMOS
1522-PTF
041 CAPACITOR PHILLIPS
G200
PTF 10041
DBX12
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rf mosfet ericsson
Abstract: 212-136 G200 K1206 mosfet 6 ghz PTF10035
Text: PTF 10035 30 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10035 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts power output.
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K1206
1-877-GOLDMOS
1301-PTF
rf mosfet ericsson
212-136
G200
K1206
mosfet 6 ghz
PTF10035
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capacitor siemens 4700 35
Abstract: G200 atcb
Text: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10043 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts
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P4917-ND
P5276
1-877-GOLDMOS
1301-PTF
capacitor siemens 4700 35
G200
atcb
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G200
Abstract: No abstract text available
Text: PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device
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P4917-ND
P5276
1-877-GOLDMOS
1522-PTF
G200
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Untitled
Abstract: No abstract text available
Text: PTF 10043 GOLDMOS Field Effect Transistor 12 Watts, 1.9–2.0 GHz Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device
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P4917-ND
P5276
1-877-GOLDMOS
1522-PTF
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static var compensator
Abstract: HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240
Text: Mitsubishi Thyristor FT1500AU-240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts J x K (BOTH SIDES) H TYP GATE (WHITE) G TYP AUX CATHODE POTENTIAL CONNECTOR (RED) F
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FT1500AU-240
Amperes/12000
2000V)
1050mA
static var compensator
HIGH VOLTAGE THYRISTOR
thyristor 12000V 1500A
press pack thyristor 8000 VDRM
THYRISTOR H 1500
press pack thyristor
high power thyristor Vdrm 6000
press pack thyristor 10000 VDRM
FT1500AU-240
U240
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MW6IC1940NB
Abstract: A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J735
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N - 2 Rev. 4, 3/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage
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MW6IC1940N
MW6IC1940NB
MW6IC1940NBR1
MW6IC1940N-2
A113
A114
A115
AN1977
AN1987
C101
JESD22
MW6IC1940NBR1
J735
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A113
Abstract: A114 A115 AN1977 AN1987 C101 JESD22
Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base
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MW6IC1940GNB
MW6IC1940GNBR1
MW6IC1940N-1
A113
A114
A115
AN1977
AN1987
C101
JESD22
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This
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MW6IC1940N
MW6IC1940NB/GNB
MW6IC1940NBR1
MW6IC1940GNBR1
28cers,
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 0, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This
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MW6IC1940N
MW6IC1940NB/GNB
MW6IC1940NBR1
MW6IC1940GNBR1
MW6IC1940N
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G200
Abstract: No abstract text available
Text: PTF 10111 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure
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1-877-GOLDMOS
1301-PTF
G200
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MHV5IC1810NR2 The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage
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MHV5IC1810N
MHV5IC1810NR2
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G200
Abstract: PTF10111
Text: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization
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1-877-GOLDMOS
1522-PTF
G200
PTF10111
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CRCW12064701FKTA
Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This
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MW6IC1940N
MW6IC1940NB/GNB
MW6IC1940NBR1
MW6IC1940GNBR1
MW6IC1940NBR1
CRCW12064701FKTA
a113 bolt
MW6IC1940NB
A113
A114
A115
AN1955
C101
JESD22
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Untitled
Abstract: No abstract text available
Text: Document Number: MW6IC2015N Rev. 3, 12/2008 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescales newest High Voltage 26 to 32 Volts LDMOS
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MW6IC2015N
MW6IC2015NBR1
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MW6IC2015NBR1
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PTF10111
Abstract: G200 a1r8
Text: PTF 10111 GOLDMOS Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization
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P5182
1-877-GOLDMOS
1522-PTF
PTF10111
G200
a1r8
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Untitled
Abstract: No abstract text available
Text: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization
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3000 watt audio circuit diagram
Abstract: 300 watts amplifier circuit diagram 4-125A 1500 watt audio amplifier circuit diagram 500 watts amplifier centrifugal blowers varian 4D21 500 watts audio amplifier diagram linear power amplifier
Text: 4-125A 4D21 RADIAL-BEAM POWER TETRODE • MODULATOR OSCILLATOR AMPLIFIER T E C H N I C A L DATA The EIM AC 4-125A is a radial-beam power tetrode intended for use as an amplifier, oscillator, or modulator. It has a maximum plate-dissipation rating of 125 watts and a maximum plate-voltage rating of 3000 volts at frequencies
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400-watt
32max.
3000 watt audio circuit diagram
300 watts amplifier circuit diagram
4-125A
1500 watt audio amplifier circuit diagram
500 watts amplifier
centrifugal blowers
varian
4D21
500 watts audio amplifier diagram
linear power amplifier
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10043* 12 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10043 is an internally matched, common source, n-channel en hancement-mode lateral MOSFET intended for large signal amplifier applications in the 1.9 to 2.0 GHz range. It is rated at 12 watts minimum
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P4917-N
P5276
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300 watts amplifier circuit diagram
Abstract: Eimac 152th 6hr6 centrifugal blowers 152TH vacuum tube amplifier 812 tube equivalent 700 watts power amplifier circuit diagram I52TH Scans-0017300
Text: 1 5 2 TH M E D I U M - M U TRI ODE E I T E L - M c C U L L O U G H , I nc. SAN ► BRUNO, • MODU L AT OR OSCILLATOR AMPLIFIER CALIFORNIA The Eimac I52TH is a medium-mu power triode intended for use as an amplifier, oscillator or modulator. It has a maximum plate-dissipation rating of 150 watts and a maximum plate-voltage rating
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I52TH
l52TH
300 watts amplifier circuit diagram
Eimac 152th
6hr6
centrifugal blowers
152TH
vacuum tube amplifier
812 tube equivalent
700 watts power amplifier circuit diagram
Scans-0017300
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4cx250b
Abstract: amplifier 4cx250b Eimac 4CX250B Applications 4cx250B tube Eimac 4cx250b scans-048 SK-600 DSAGER00031 eimac 7203
Text: 4CX250B/7203 Radial Beam Power Tetrode T he Svetlana 4CX250B/7203 is a compact metal/ceramic radial beam tetrode with a plate dissipa tion rating of'250 watts with forced-air cooling. The 4CX250B is intended for Class AB SSB linear RF amplifier service. It is
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4CX250B/7203
4CX250B
4CX250B/7203
SK600
amplifier 4cx250b
Eimac 4CX250B Applications
4cx250B tube
Eimac 4cx250b
scans-048
SK-600
DSAGER00031
eimac 7203
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3000 watts audio amplifier
Abstract: audio amplifier 2400 watt
Text: AMPEREX TRANSMITTING FORCED-AIR TUBE 891 - R ] COOLED Radio Frequency Pow er Am plifier: Class B M odulator MAXIMUM RATINGS AND TYPICAL OPERATING CONDITIONS |
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891-R
3000 watts audio amplifier
audio amplifier 2400 watt
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