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    DIAGRAM OF 2000 WATTS POWER AMP Search Results

    DIAGRAM OF 2000 WATTS POWER AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    DIAGRAM OF 2000 WATTS POWER AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and


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    PDF JMC5701 220ohm 220ZTR 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PTF 10043 GOLDMOS Field Effect Transistor 12 Watts, 1.9–2.0 GHz Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device


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    PDF P4917-ND P5276 1-877-GOLDMOS 1522-PTF

    static var compensator

    Abstract: HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240
    Text: Mitsubishi Thyristor FT1500AU-240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts J x K (BOTH SIDES) H TYP GATE (WHITE) G TYP AUX CATHODE POTENTIAL CONNECTOR (RED) F


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    PDF FT1500AU-240 Amperes/12000 2000V) 1050mA static var compensator HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


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    PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 28cers,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 0, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


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    PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MHV5IC1810NR2 The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage


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    PDF MHV5IC1810N MHV5IC1810NR2 MHV5IC1810N

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW6IC2015N Rev. 3, 12/2008 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


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    PDF MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 MW6IC2015N MW6IC2015NBR1

    Untitled

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10111 Field Effect Transistor 6 Watts, 1.5 GHz Description The PTF 10111 is a 6–watt GOLDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates at 50% efficiency with 16 dB gain. Nitride surface passivation and full gold metallization


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    PDF 1-877-GOLDMOS 1522-PTF

    STATIC VAR COMPENSATOR

    Abstract: 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A
    Text: Mitsubishi Ultra High Voltage Thyristors / Diodes FT1500AU-240 FD2000DU-120 1500 Amperes / 12000 Volts (2000 Amperes / 6000 Volts) Mitsubishi Ultra High Voltage Thyristors are used in high voltage AC Switch and Static Var Compensator (SVC) applications.


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    PDF FT1500AU-240 FD2000DU-120 Amperes/12000 STATIC VAR COMPENSATOR 12V DC sine wave inverters circuit diagram press pack thyristor 9000 VDRM press pack thyristor 10000 VDRM HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor press pack thyristor 8000 VDRM high power thyristor Vdrm 6000 thyristor 2800A

    0221l

    Abstract: 57-TYP
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold


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    PDF P5782-ND 220ohm, 1-877-GOLDMOS 1522-PTF 0221l 57-TYP

    G200

    Abstract: f 0952
    Text: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


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    PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200 f 0952

    0.047 mf capacitor

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10137 Field Effect Transistor 12 Watts, 1.0 GHz Description The PTF 10137 is a 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


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    PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF 0.047 mf capacitor

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 500 watt power circuit diagram capacitor siemens 4700 35 G200 10136
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold


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    PDF 220ohm, 1-877-GOLDMOS 1522-PTF 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 500 watt power circuit diagram capacitor siemens 4700 35 G200 10136

    J107-2

    Abstract: 100A0R5BW 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM A113 A114 A115 AN1955 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 0, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


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    PDF MHV5IC1810N MHV5IC1810N MHV5IC1810NR2 J107-2 100A0R5BW 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM A113 A114 A115 AN1955 AN1987 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1910-1 PCS Band RF Power LDMOS Amplifier 1930ā–ā1990 MHz, 10 W RF POWER LDMOS AMPLIFIER CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage


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    PDF MHW1910/D MHW1910-1 301AWâ MHW1910â

    Motorola 666

    Abstract: MHW1910 MHW1910-1 1800 ldmos
    Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1910-1 PCS Band RF Power LDMOS Amplifier 1930ā–ā1990 MHz, 10 W RF POWER LDMOS AMPLIFIER CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage


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    PDF MHW1910/D MHW1910-1 301AW MHW1910 Motorola 666 MHW1910-1 1800 ldmos

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 6, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


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    PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1

    3000 watt audio circuit diagram

    Abstract: 300 watts amplifier circuit diagram 4-125A 1500 watt audio amplifier circuit diagram 500 watts amplifier centrifugal blowers varian 4D21 500 watts audio amplifier diagram linear power amplifier
    Text: 4-125A 4D21 RADIAL-BEAM POWER TETRODE • MODULATOR OSCILLATOR AMPLIFIER T E C H N I C A L DATA The EIM AC 4-125A is a radial-beam power tetrode intended for use as an amplifier, oscillator, or modulator. It has a maximum plate-dissipation rating of 125 watts and a maximum plate-voltage rating of 3000 volts at frequencies


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    PDF 400-watt 32max. 3000 watt audio circuit diagram 300 watts amplifier circuit diagram 4-125A 1500 watt audio amplifier circuit diagram 500 watts amplifier centrifugal blowers varian 4D21 500 watts audio amplifier diagram linear power amplifier

    300 watts amplifier circuit diagram

    Abstract: Eimac 152th 6hr6 centrifugal blowers 152TH vacuum tube amplifier 812 tube equivalent 700 watts power amplifier circuit diagram I52TH Scans-0017300
    Text: 1 5 2 TH M E D I U M - M U TRI ODE E I T E L - M c C U L L O U G H , I nc. SAN ► BRUNO, • MODU L AT OR OSCILLATOR AMPLIFIER CALIFORNIA The Eimac I52TH is a medium-mu power triode intended for use as an amplifier, oscillator or modulator. It has a maximum plate-dissipation rating of 150 watts and a maximum plate-voltage rating


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    PDF I52TH l52TH 300 watts amplifier circuit diagram Eimac 152th 6hr6 centrifugal blowers 152TH vacuum tube amplifier 812 tube equivalent 700 watts power amplifier circuit diagram Scans-0017300

    4cx250b

    Abstract: amplifier 4cx250b Eimac 4CX250B Applications 4cx250B tube Eimac 4cx250b scans-048 SK-600 DSAGER00031 eimac 7203
    Text: 4CX250B/7203 Radial Beam Power Tetrode T he Svetlana 4CX250B/7203 is a compact metal/ceramic radial beam tetrode with a plate dissipa­ tion rating of'250 watts with forced-air cooling. The 4CX250B is intended for Class AB SSB linear RF amplifier service. It is


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    PDF 4CX250B/7203 4CX250B 4CX250B/7203 SK600 amplifier 4cx250b Eimac 4CX250B Applications 4cx250B tube Eimac 4cx250b scans-048 SK-600 DSAGER00031 eimac 7203

    3000 watts audio amplifier

    Abstract: audio amplifier 2400 watt
    Text: AMPEREX TRANSMITTING FORCED-AIR TUBE 891 - R ] COOLED Radio Frequency Pow er Am plifier: Class B M odulator MAXIMUM RATINGS AND TYPICAL OPERATING CONDITIONS |


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    PDF 891-R 3000 watts audio amplifier audio amplifier 2400 watt

    4000 watts power amplifier circuit diagram

    Abstract: 300 watts amplifier circuit diagram 5000 watts power amplifier circuit diagram 1000 watts power amplifier circuit diagram 304TH 700 watts power amplifier circuit diagram 1000 watt ups circuit diagrams 300w power amplifier circuit diagram Eimac 304 centrifugal blower
    Text: 3 0 4 TH MEDI UM -M U • E I T E L - M c C U L L O U G H , I nc. SAN BRUNO, TRIODE MODULATOR CA LIFO R N IA OSCILLATOR AMPLIFIER Th e Eim ac 304TH is a medium-mu power triode intended for use os an am p lifier, oscillato r or m odulator. It has a maximum plate-dissipation rating of 300 w atts and a maximum plate-voltage rating


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    PDF 304TH 304-TH-l- 2000VOLTS CLA93 4000 watts power amplifier circuit diagram 300 watts amplifier circuit diagram 5000 watts power amplifier circuit diagram 1000 watts power amplifier circuit diagram 700 watts power amplifier circuit diagram 1000 watt ups circuit diagrams 300w power amplifier circuit diagram Eimac 304 centrifugal blower

    relay 04501

    Abstract: 04501 relay
    Text: HARRIS SEMICOND SECTOR SbE d m 4302271 0040327 4T0 « H A S D 45D S e rie s Rie Number 2353 - ^ 6-Ampere P-N-P Darlington Power Transistors 3 7 - 2 e? TERMINAL DESIGNATIONS Complementary to the D44D Series -40, -60, and -8 0 Volts, 30 Watts Gain of 2000 at -1 A


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    PDF 9ZCS-39969 O-220AB D45D-series D45D5 125ec D45D2 relay 04501 04501 relay

    4X150A

    Abstract: scans-048 4CX250B DSAGER00032 amplifier 4cx250b
    Text: 4X150 A/7034 Radial Beam Power Tetrode he Svetlana 4X150A/7034 is a compact radial beam tetrode. The 4X150A is intended for ’lass AB SSB linear RF amplifier sendee. It is intended for stationary and mobile equipment designs with power amplification at frequencies up to 500


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    PDF 4X150 4X150A/7034 4X150A 4Xi50A 4CX250B. 50A/7034 scans-048 4CX250B DSAGER00032 amplifier 4cx250b