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    DIE ATTACH AND BONDING GUIDELINES Search Results

    DIE ATTACH AND BONDING GUIDELINES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SAS2MUKPTR-000.5 Amphenol Cables on Demand Amphenol CS-SAS2MUKPTR-000.5 External Mini-SAS Cable (Pull-Tab) - 4x Mini-SAS (SFF-8088) to 4x Mini-SAS (SFF-8088) 0.5m Datasheet
    CS-SAS2MUKPTR-002 Amphenol Cables on Demand Amphenol CS-SAS2MUKPTR-002 External Mini-SAS Cable (Pull-Tab) - 4x Mini-SAS (SFF-8088) to 4x Mini-SAS (SFF-8088) 2m Datasheet
    CS-SAS2MUKPTR-006 Amphenol Cables on Demand Amphenol CS-SAS2MUKPTR-006 External Mini-SAS Cable (Pull-Tab) - 4x Mini-SAS (SFF-8088) to 4x Mini-SAS (SFF-8088) 6m Datasheet
    CS-SASMINTOHD-002 Amphenol Cables on Demand Amphenol CS-SASMINTOHD-002 2m (6.6') External 4x Mini-SAS to HD Mini-SAS Cable - 4x Mini-SAS HD (SFF-8644) to 4x Mini-SAS 26-pin (SFF-8088) Passive Copper Cable [28 AWG] - 6G SAS 2.1 / iPass+™ HD Datasheet
    CS-SASMINTOHD-003 Amphenol Cables on Demand Amphenol CS-SASMINTOHD-003 3m (9.8') External 4x Mini-SAS to HD Mini-SAS Cable - 4x Mini-SAS HD (SFF-8644) to 4x Mini-SAS 26-pin (SFF-8088) Passive Copper Cable [28 AWG] - 6G SAS 2.1 / iPass+™ HD Datasheet

    DIE ATTACH AND BONDING GUIDELINES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AuSn eutectic

    Abstract: wire bond recommendations Die Attach and Bonding Guidelines Gan on silicon transistor Gan on silicon substrate AN008 DIE BONDER
    Text: Application Note AN-008 Die Attach and Bonding Recommendations Introduction While Nitronex’s core market is packaged RF products, we sell die to select customers for use in modules and subsystems. One benefit of Nitronex GaN devices is they are fabricated on industry standard silicon wafers so


    Original     		AN-008 AuSn eutectic wire bond recommendations Die Attach and Bonding Guidelines Gan on silicon transistor Gan on silicon substrate AN008 DIE BONDER PDF

    84-1LMI epoxy adhesive

    Abstract: 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS
    Text: GaAs MMIC ESD, Die Attach and Bonding Guidelines Application Note # 54 - Rev. A May 2000 1.0 ESD Considerations A GaAs IC can be destroyed electrically by a static or other discharge through the device. It must therefore be handled so these effects cannot occur.


    Original     		SPT-1002-A-W-2015-L-F 84-1LMI epoxy adhesive 84-1LMI thermocompression Die Attach and Bonding Guidelines copper bond wire PEDESTAL FOR MMIC BRASS PDF

    KCW-10

    Abstract: AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10
    Text: H GaAs MMIC Assembly and Handling Guidelines Application Note 999 Mechanical Considerations Because of the small size of the devices, handling should always be performed with the aid of a microscope. There are several methods for picking up, transferring and die


    Original     		5091-1988E 5964-6644E KCW-10 AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10 PDF

    CPR3-AN03

    Abstract: pressure low die attach UP78 silicon carbide LED cree AuSn eutectic ejector 0.5um silicon carbide LED bonding wire cree
    Text: APPLICATION NOTE XThinTM Sn Die Attachment Recommendations This applications note provides the user with a basic understanding of Cree’s new low temperature attach version XThin chips, information on the recommended packaging, and an overview of some constraints to be considered when packaging the chips.


    Original     		CPR3-AN02, CPR3-AN03 pressure low die attach UP78 silicon carbide LED cree AuSn eutectic ejector 0.5um silicon carbide LED bonding wire cree PDF

    ultrasonic probe ge

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
    Text: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes


    Original     		AN-1001 ultrasonic probe ge GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave PDF

    AN-S003

    Abstract: 1 kilo ohm resistor specifications bonding capillary hp mmic MSA-0100 MSA-0200 MSA-0300 MSA-0500 MSA-0600 MSA-0700
    Text: MODAMP Silicon MMIC Chip Use Application Note S009 Introduction This Application Note supplies information needed to layout and assemble circuits when using Hewlett-Packard’s MODAMP silicon MMIC amplifiers in chip form. Section I gives an overview of the


    Original     		5091-9054E AN-S003 1 kilo ohm resistor specifications bonding capillary hp mmic MSA-0100 MSA-0200 MSA-0300 MSA-0500 MSA-0600 MSA-0700 PDF

    SEMICONDUCTOR PACKAGING ASSEMBLY TECHNOLOGY

    Abstract: MS011800 bond wire gold copper bond wire cte table epoxy substrate soft solder wire dispensing NATIONAL SEMICONDUCTOR ink MARKING AU4A cte table ic bga PCB monitor spc
    Text: Semiconductor Packaging Assembly Technology Introduction This chapter describes the fundamentals of the processes used by National Semiconductor to assemble IC devices in electronic packages. Electronic packaging provides the interconnection from the IC to the printed circuit board PCB .


    Original     		PDF

    NATIONAL SEMICONDUCTOR ink MARKING

    Abstract: Die Attach epoxy stamping cte table flip chip substrate cte table ic bga JESD 49 gold wire bond failures due to ultrasonic cleaning Aluminum alloys physical properties FLIP CHIP PRODUCTS micro machine thermal conductivity coefficient of thermal expansion of thermal conductive pressure sensitive adhesive
    Text: September 2000 Die Products Business Unit as watches, calculators and smart cards as well as leading edge multiple die applications like cellular handsets and digital cameras. Better device performance utilizing die show up in processor modules for computers, workstations and servers as


    Original     		PDF

    asm eagle

    Abstract: WHP-002 flux-eutectic 2151-HTV21-CT-series CPR3-AN03 EZ290 bonding wire cree UP78 EZ1000 1572-17-437GM-20D
    Text: EZBright LED Handling and Packaging Recommendations This applications note provides the user with a basic understanding of Cree’s EZBright LED chips, as well as recommendations on handling and packaging. Cree’s EZBright LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials


    Original     		EZ290TM EZR260TM EZ290, EZR260 EZ1000 CPR3AN04 asm eagle WHP-002 flux-eutectic 2151-HTV21-CT-series CPR3-AN03 EZ290 bonding wire cree UP78 1572-17-437GM-20D PDF

    actel package mechanical drawing

    Abstract: CC256 antifuse programming technology AC193 CERAMIC QUAD FLATPACK CQFP antifuse CQ208 CQFP 256 PIN actel
    Text: Application Note AC193 Ceramic Chip Carrier Land Grid CC256 Package Handling Introduction Die-level solutions allow for the integration of differing technologies or products from multiple companies, all on the same board or multi-chip module. Die that can be tritemp tested or screened, also


    Original     		AC193 CC256) CC256 actel package mechanical drawing antifuse programming technology AC193 CERAMIC QUAD FLATPACK CQFP antifuse CQ208 CQFP 256 PIN actel PDF

    Untitled

    Abstract: No abstract text available
    Text: VISHAY SEMICONDUCTORS www.vishay.com Optical Sensors Application Note Handling IR Emitters and Photo Detector Bare Die By Elena Poklonskaya This application note provides instructions for how to handle and mount IR emitter and photo detector bare die products


    Original     		30-Jul-14 PDF

    AuSn eutectic

    Abstract: inductive pickup
    Text: v02.1203 Handling Precautions Follow these precautions to avoid permanent damage: Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v02.1203 Handling Precautions Follow these precautions to avoid permanent damage: Storage:


    Original     		PDF

    HMMC-5034

    Abstract: HMMC-5040 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
    Text: Agilent HMMC-5034 37–43 GHz Amplifier Data Sheet TC926 Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5034 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 37 GHz to 42.5 GHz range. At 40 GHz it


    Original     		HMMC-5034 TC926 HMMC-5034 HMMC-5040 5988-3203EN GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC PDF

    TC221

    Abstract: 1GC1-8038 GaAs MMIC ESD, Die Attach and Bonding Guidelines 8038 CE25 Die Attach and Bonding Guidelines
    Text: Agilent 1GC1-8038 50 GHz Frequency Doubler TC221 Data Sheet Features • Conversion Efficiency: −12 dB Typical • 1/2 and 3/2 spurs: 15 dBc Typical Chip Size: Chip Size Tolerance: Chip Thickness: 890 x 500 µm 35.0 x 19.7 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils)


    Original     		1GC1-8038 TC221 TC221/rev 1GC1-8038 GaAs MMIC ESD, Die Attach and Bonding Guidelines 8038 CE25 Die Attach and Bonding Guidelines PDF

    Die Attach and Bonding Guidelines

    Abstract: schottky diode application chip diode agilent HSCH-9401
    Text: Agilent HSCH-9401 GaAs Schottky Diode Data Sheet Features Chip Size: 610 x 255 µm 24 × 10 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 µm (4 mils) Chip Thickness Tolerance:± 15 µm (± 0.6 mils) Bond Pad Sizes: 175 × 175 µm (6.9 × 6.9 mils)


    Original     		HSCH-9401 HSCH-9401 HSCH-9401/rev Die Attach and Bonding Guidelines schottky diode application chip diode agilent PDF

    GaAs MMIC ESD, Die Attach and Bonding Guidelines

    Abstract: all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all
    Text: HSCH-9401 GaAs Schottky Diode Data Sheet Description The HSCH-9401 is a discrete Schottky barrier diode fabricated with the Schottky Barrier Integrated Diode SBID process. Features • fC >800 GHz Applications The HSCH-9401 is a general purpose millimeter wave


    Original     		HSCH-9401 HSCH-9401 5988-4416E 5988-6154EN GaAs MMIC ESD, Die Attach and Bonding Guidelines all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all PDF

    GaAs MMIC ESD, Die Attach and Bonding Guidelines

    Abstract: HSCH-9401 all diode List Die Attach and Bonding Guidelines PN diode specifications
    Text: Agilent HSCH-9401 GaAs Schottky Diode Data Sheet Features • fC >800 GHz • Low junction capacitance – typically 35 fF • Low series resistance – typically 6Ω Chip Size: Chip Size Tolerance: Chip Thickness: Chip Thickness Tol: Bond Pad Sizes: 610 x 255 µm 24 x 10 mils


    Original     		HSCH-9401 HSCH-9401 5968-4416E 5988-6154EN GaAs MMIC ESD, Die Attach and Bonding Guidelines all diode List Die Attach and Bonding Guidelines PN diode specifications PDF

    1GC1

    Abstract: Die Attach and Bonding Guidelines TC225 GaAs MMIC ESD, Die Attach and Bonding Guidelines 1gc1 agilent TC2-25 2tc2-25 agilent HBT transistor series
    Text: Agilent 1GC1-8048 40–72 GHz Doubler TC225 Data Sheet Features • PIN = + 15 dBm • Wide Bandwidth: 40–72 GHz Usable to 80+ GHz • Low Conversion Loss: 13 dB typical • Low 1/2 and 3/2 spurs: –23 dBc typical Chip Size: Chip Size Tolerance: Chip Thickness:


    Original     		1GC1-8048 TC225 TC225 1GC1-8048 TC225/rev 1GC1 Die Attach and Bonding Guidelines GaAs MMIC ESD, Die Attach and Bonding Guidelines 1gc1 agilent TC2-25 2tc2-25 agilent HBT transistor series PDF

    TC225

    Abstract: No abstract text available
    Text: Agilent 1GC1-8048 40–72 GHz Doubler TC225 Data Sheet Features • PIN = + 15 dBm • Wide Bandwidth: 40–72 GHz Usable to 80+ GHz • Low Conversion Loss: 13 dB typical • Low 1/2 and 3/2 spurs: –23 dBc typical Chip Size: Chip Size Tolerance: Chip Thickness:


    Original     		1GC1-8048 TC225 TC225 1GC1-8048 TC225/rev PDF

    DM4030LD

    Abstract: diemat thermal conductivity
    Text: DM4030LD Data Sheet DM4030LD THERMOPLASTIC ADHESIVE PASTE PRODUCT DATA SHEET I. DESCRIPTION The DM4030LD is a silver-loaded thermoplastic paste designed specifically for wet paste attach of large devices, heat sinks, and/or substrates. DM4030LD provides a low stress, resilient bond for large-area, highly-mismatched materials. Due to a patented polymer/


    Original     		DM4030LD DM4030LD sheets/DM4030LD diemat thermal conductivity PDF

    GaAs MMIC ESD, Die Attach and Bonding Guidelines

    Abstract: diode 716 Die Attach and Bonding Guidelines HSCH-9201 HSCH-9501 chip diode agilent HSCH9201
    Text: Agilent HSCH-9501 GaAs Schottky Diode Series Pair Tee Data Sheet Features • Low Junction Capacitance – typically 40 fF • Low Series Resistance – typically 3 Ω • Large bond pads suitable for automated wire-bonding or flip-chip assembly • Polyimide scratch protection


    Original     		HSCH-9501 HSCH-9501 HSCH-9201 Assemb850 HSCH-9501/rev GaAs MMIC ESD, Die Attach and Bonding Guidelines diode 716 Die Attach and Bonding Guidelines chip diode agilent HSCH9201 PDF

    5032

    Abstract: Die Attach and Bonding Guidelines
    Text: Agilent HMMC-5032 17.7-32 GHz Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power and 8 dB of small-signal gain from a small easy-to-use


    Original     		HMMC-5032 HMMC-5032 HMMC-5040 HMMC-5618 HMMC-5040 5032 Die Attach and Bonding Guidelines PDF

    1gc1-8053

    Abstract: MMIC limiter 1gc1 tc231 GaAs MMIC ESD, Die Attach and Bonding Guidelines
    Text: Agilent 1GC1-8053 0–65 GHz Integrated Diode Limiter TC231 Data Sheet Features • Two Independent Limiters for Single–ended or Differential Signals • Can be Biased for Adjustable Limit Level and Signal Detection • Minimum Group Delay Chip Size: Chip Size Tolerance:


    Original     		1GC1-8053 TC231 TC231 00E-03 00E-04 00E-05 00E-06 1gc1-8053 MMIC limiter 1gc1 GaAs MMIC ESD, Die Attach and Bonding Guidelines PDF