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    DIELECTRICALLY ISOLATED BIPOLAR INTERSIL Search Results

    DIELECTRICALLY ISOLATED BIPOLAR INTERSIL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MYC0409-NA-EVM Murata Manufacturing Co Ltd 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board Visit Murata Manufacturing Co Ltd
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    DIELECTRICALLY ISOLATED BIPOLAR INTERSIL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TIP 27

    Abstract: RLR RESISTORS HC5526 HC5526CM PBL3764 ERICSSON PABX
    Text: HC5526 TM Data Sheet October 2000 ITU CO/PABX SLIC with Low Power Standby • DI Monolithic High Voltage Process The HC5526 is fabricated in a High Voltage Dielectrically Isolated DI Bipolar Process that eliminates leakage currents and device latch-up problems normally associated


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    HC5526 HC5526 HC5526CM TIP 27 RLR RESISTORS HC5526CM PBL3764 ERICSSON PABX PDF

    DIODE(IN4007) datasheet

    Abstract: IN4007 diode Surgector TIP 27 DIODE IN4007 HC5515CM HC5515 PBL3860
    Text: HC5515 TM Data Sheet October 2000 ITU CO/PABX SLIC with Low Power Standby • DI Monolithic High Voltage Process The HC5515 is fabricated in a High Voltage Dielectrically Isolated DI Bipolar Process that eliminates leakage currents and device latch-up problems normally associated


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    HC5515 HC5515 HC5515CM DIODE(IN4007) datasheet IN4007 diode Surgector TIP 27 DIODE IN4007 HC5515CM PBL3860 PDF

    PBL3764

    Abstract: HC5513 HC5513BIP TR909 Diodes In4007 ERICSSON PABX RSG D3-0505N
    Text: R EC TR909 DLC/FLC SLIC with Low Power Standby Part Number Information HC5513BIP -40 to 85 FN3963.12 • DI Monolithic High Voltage Process The HC5513 is fabricated in a High Voltage Dielectrically Isolated DI Bipolar Process that eliminates leakage currents and device latch-up problems normally associated


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    TR909 FN3963 HC5513 PBL3764 HC5513BIP Diodes In4007 ERICSSON PABX RSG D3-0505N PDF

    HS 3282

    Abstract: HS-3282 HS-3182 5962-86879013A 5962-8687901EA HS1-3182-8 HS1-3182-9 HS4-3182-8
    Text: HS-3182 TM ARINC 429 Bus Interface Line Driver Circuit March 1997 Features Description • TTL and CMOS Compatible Inputs The HS-3182 is a monolithic dielectrically isolated bipolar differential line driver designed to meet the specifications of ARINC 429. This Device is intended to be used with a companion chip,


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    HS-3182 HS-3182 HS-3282 125oC. 500pF, 25kHz HS 3282 5962-86879013A 5962-8687901EA HS1-3182-8 HS1-3182-9 HS4-3182-8 PDF

    HS-3182

    Abstract: HS 3182 HS 3282 HS1-3182-9 HS-3282 HS4-3182-8 5962-86879013A 5962-8687901EA HS1-3182-8 smd transistor HS4
    Text: HS-3182 ARINC 429 Bus Interface Line Driver Circuit March 1997 Features Description • TTL and CMOS Compatible Inputs The HS-3182 is a monolithic dielectrically isolated bipolar differential line driver designed to meet the specifications of ARINC 429. This Device is intended to be used with a companion chip,


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    HS-3182 HS-3182 HS-3282 HS 3182 HS 3282 HS1-3182-9 HS4-3182-8 5962-86879013A 5962-8687901EA HS1-3182-8 smd transistor HS4 PDF

    DIODE IN4007 specifications in english

    Abstract: DIODE(IN4007) datasheet PBL3764A HC5523 HC5523IM HC5523IP in4007diode
    Text: CT O D U EM EN T R P TE AC O LE E PL O B S N D ED R E 515 OM M Data Sheet HC5 R EC LSSGR/TR57 CO/Loop Carrier SLIC with Low Power Standby FN4144.6 • DI Monolithic High Voltage Process The HC5523 is fabricated in a High Voltage Dielectrically Isolated DI Bipolar Process that eliminates leakage


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    HC5515 LSSGR/TR57 FN4144 HC5523 DIODE IN4007 specifications in english DIODE(IN4007) datasheet PBL3764A HC5523IM HC5523IP in4007diode PDF

    4606 SMD

    Abstract: AL 4606 SI 4606 HS1-5104ARH-T HS-5104ARH-T HS9-5104ARH-T DIELECTRICALLY ISOLATED INTERSIL BIPOLAR HS5104
    Text: HS-5104ARH-T Data Sheet July 1999 Radiation Hardened Low Noise Quad Operational Amplifier Intersil‘s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow


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    HS-5104ARH-T 100kRAD HS-5104ARH-T 4606 SMD AL 4606 SI 4606 HS1-5104ARH-T HS9-5104ARH-T DIELECTRICALLY ISOLATED INTERSIL BIPOLAR HS5104 PDF

    motorola LM324

    Abstract: LM324 SMD IS1009RH DIELECTRICALLY ISOLATED BIPOLAR INTERSIL LM324 OPERATIONAL AMPLIFIER IS-1009 LM324 IS-1009RH DIELECTRICALLY ISOLATED INTERSIL BIPOLAR HS9-139RH
    Text: Low Dose Rate Testing of the Intersil IS1009RH Hardened Voltage Reference December 2006 Nick van Vonno Intersil Corporation Abstract: This document provides a brief introduction to low dose rate effects including discussion of Intersil’s approach to testing and qualification issues. We then report results of


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    IS1009RH 100krad motorola LM324 LM324 SMD DIELECTRICALLY ISOLATED BIPOLAR INTERSIL LM324 OPERATIONAL AMPLIFIER IS-1009 LM324 IS-1009RH DIELECTRICALLY ISOLATED INTERSIL BIPOLAR HS9-139RH PDF

    npn transistor w19

    Abstract: w19 transistor
    Text: U h # HARRIS HTA2000 SEMICONDUCTOR • RCA • GE • INTERSIL VHF Tile Array June 1990 Advance Information Features Overview • Supported on Harris Bipolar Analog FASTRACK Design System The Harris HTA2000 Tile Array provides the analog system designer with a fast turn, low cost tile array methodology for


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    HTA2000 HTA2000 npn transistor w19 w19 transistor PDF

    8 pin LM328 ic

    Abstract: LINEAR VOLTAGE REGULATOR LM328 8 PIN IC pin out of lm328 lm328 datasheet LM328 "Linear Voltage Regulator" ISL72991 HS9-139RH HS9S-117RH ISL72991RH
    Text: Low dose rate testing of the Intersil HS9S-117RH positive linear voltage regulator July 2006 Nick van Vonno Intersil Corporation Abstract: This document provides a brief introduction to low dose rate effects including discussion of Intersil’s approach to testing and qualification issues. We then report


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    HS9S-117RH 100krad Cobalt-60 8 pin LM328 ic LINEAR VOLTAGE REGULATOR LM328 8 PIN IC pin out of lm328 lm328 datasheet LM328 "Linear Voltage Regulator" ISL72991 HS9-139RH ISL72991RH PDF

    motorola LM324

    Abstract: LM324 OPERATIONAL AMPLIFIER IS-1009 constant current load using lm324 IS1009RH CDFP3-F28 LM324 SMD HS9-139RH HS9S-117RH LM139
    Text: Low Dose Rate Testing of the Intersil ISL72991RH Negative Low Dropout Regulator February 2008 Nick van Vonno Intersil Corporation Abstract: This document provides a brief introduction to low dose rate effects including discussion of Intersil’s approach to testing and qualification issues. We then report results of


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    ISL72991RH 85krad motorola LM324 LM324 OPERATIONAL AMPLIFIER IS-1009 constant current load using lm324 IS1009RH CDFP3-F28 LM324 SMD HS9-139RH HS9S-117RH LM139 PDF

    lm328

    Abstract: lm328 datasheet cmos testing abstract 8 pin LM328 ic HS9-139RH SMD 5962-98613 pin out of lm328 LM139 user acceptance DIELECTRICALLY ISOLATED INTERSIL BIPOLAR
    Text: Low Dose Rate Testing of the Intersil HS9-139RH quad comparator April 2006 Nick van Vonno Intersil Corporation Abstract: This document provides a brief introduction to low dose rate effects including discussion of Intersil’s approach to testing and qualification issues. We then report


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    HS9-139RH 100krad Cobalt-60 lm328 lm328 datasheet cmos testing abstract 8 pin LM328 ic SMD 5962-98613 pin out of lm328 LM139 user acceptance DIELECTRICALLY ISOLATED INTERSIL BIPOLAR PDF

    intersil standard part marking

    Abstract: K14.A Package
    Text: Radiation Hardened, Very Low Noise Quad Operational Amplifier HS-OP470ARH Features The HS-OP470ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance in harsh radiation environments. Its excellent noise characteristics


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    HS-OP470ARH HS-OP470ARH 40kV/V. FN4471 intersil standard part marking K14.A Package PDF

    CDFP3-F14

    Abstract: 5962R9853301VXC 5962r9853301 5962-98533 HS9-OP470ARH-Q HS-OP470ARH DIELECTRICALLY ISOLATED INTERSIL BIPOLAR SMD TRANSISTOR FL HS-OP470AR
    Text: HS-OP470ARH Radiation Hardened, Very Low Noise Quad Operational Amplifier February 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-OP470ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance


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    HS-OP470ARH MIL-PRF-38535 HS-OP470ARH CDFP3-F14 5962R9853301VXC 5962r9853301 5962-98533 HS9-OP470ARH-Q DIELECTRICALLY ISOLATED INTERSIL BIPOLAR SMD TRANSISTOR FL HS-OP470AR PDF

    5962R9569001V9A

    Abstract: 5962R9569001VCC 5962R9569001VXC HS0-5104ARH-Q HS1-5104ARH-Q HS-5104ARH HS9-5104ARH-Q DIELECTRICALLY ISOLATED INTERSIL BIPOLAR
    Text: HS-5104ARH Data Sheet Radiation Hardened Low Noise Quad Operational Amplifier The HS-5104ARH is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance in harsh radiation environments. Its excellent noise characteristics coupled with an unique array of


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    HS-5104ARH HS-5104ARH 100kRAD 5962R9569001V9A 5962R9569001VCC 5962R9569001VXC HS0-5104ARH-Q HS1-5104ARH-Q HS9-5104ARH-Q DIELECTRICALLY ISOLATED INTERSIL BIPOLAR PDF

    HS1-5104ARH-8

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 96-07-02 M. A. FRYE Sheet 6: Table I, Output current test, -IOUT; add M, D, L, R box to the conditions column and add -7 mA max to the limits column for that condition. Made changes in accordance with N.O.R. 5962-R170-96.


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    5962-R170-96. CDFP3-F14â 5962R9569002V9A HS0-5104AEH-Q HS1-5104ARH-8 PDF

    IS-1845ASRH

    Abstract: No abstract text available
    Text: Single Event Testing of the IS-1845ASRHPulse Width Modulator Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latchup SEL , single-event transient (SET) and


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    IS-1845ASRHPulse -1845ASRH 5x10-6 35MeV/mg/cm2 IS-1845ASRH PDF

    GAMMA Radiation Detector

    Abstract: metal detectors IC NPN PNP Transistor Arrays 5GHz PNP transistor pnp array TRANSISTOR PNP 5GHz DIELECTRICALLY ISOLATED BIPOLAR INTERSIL ISL73096RHVX pnp 8 transistor array PNP UHF transistor
    Text: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet December 20, 2007 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP


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    ISL73096RH, ISL73127RH, ISL73128RH ISL73127RH ISL73128RH ISL73096RH ISL73127RH FN6475 GAMMA Radiation Detector metal detectors IC NPN PNP Transistor Arrays 5GHz PNP transistor pnp array TRANSISTOR PNP 5GHz DIELECTRICALLY ISOLATED BIPOLAR INTERSIL ISL73096RHVX pnp 8 transistor array PNP UHF transistor PDF

    HS-OP470ARH

    Abstract: No abstract text available
    Text: Radiation Hardened, Very Low Noise Quad Operational Amplifiers HS-OP470ARH, HS-OP470AEH Features The HS-OP470ARH, HS-OP470AEH are a radiation hardened, monolithic quad operational amplifiers that provide highly reliable performance in harsh radiation environments. Excellent


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    HS-OP470ARH, HS-OP470AEH HS-OP470AEH MIL-PRF-38535 50-300rad 100krad 038mm) FN4471 HS-OP470ARH PDF

    1N4002

    Abstract: 5962D9568401VEA HS1-2400RH-Q HS-2400RH
    Text: HS-2400RH TM Data Sheet Radiation Hardened PRAM Four Channel Programmable Operational Amplifier HS-2400RH is a four-channel programmable amplifier providing a level of versatility unsurpassed by any other monolithic operational amplifier. Versatility is achieved by


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    HS-2400RH HS-2400RH 1N4002 5962D9568401VEA HS1-2400RH-Q PDF

    1000 microfarad 25v capacitor

    Abstract: capacitor, 1000 microfarad IS-1009RH IS1009RH IS-1009 1 microfarad capacitor 100uF (M) capacitor filter capacitor cross reference k500 npn pnp Rf transistor bipolar cross reference
    Text: Single Event Testing of the IS-1009RH Voltage Reference October 2000 Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuitry, including singleevent latchup SEL , single -event transient (SET) and single -event burnout


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    IS-1009RH 10Kohm, 500mV, 100uF 500mV 1000 microfarad 25v capacitor capacitor, 1000 microfarad IS1009RH IS-1009 1 microfarad capacitor 100uF (M) capacitor filter capacitor cross reference k500 npn pnp Rf transistor bipolar cross reference PDF

    calibration of dvm specifications

    Abstract: 5962R9675501TJC 5962R9675501TXC CDFP4-F24 HI-565A HS1-565ARH-T HS-565ARH-T HS9-565ARH-T
    Text: HS-565ARH-T Data Sheet July 1999 Radiation Hardened High Speed, Monolithic Digital-to-Analog Converter FlowTM Intersil’s Satellite Applications SAF devices are fully tested and guaranteed to 100kRAD total dose. This QML Class T device is processed to a standard flow intended to


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    HS-565ARH-T 100kRAD MIL-PRF-38535 AD-565A HI-565A HS-565ARH-T 12-bit calibration of dvm specifications 5962R9675501TJC 5962R9675501TXC CDFP4-F24 HI-565A HS1-565ARH-T HS9-565ARH-T PDF

    60Co

    Abstract: No abstract text available
    Text: Intersil White Paper Specialty Products Space and Defense Wafer by Wafer Low Dose Rate Acceptance Testing in a Production Environment Abstract—This White Paper describes technical details of a wafer by wafer low dose rate acceptance testing program being implemented for all Intersil radiation hardened products. We


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    schematic diagram pulse with modulator

    Abstract: various PWM techniques IS-1825ASRH IS1825 "PWM Controller" radiation-hardened transformer 0.1uf 50v K500
    Text: Single Event Effects Testing of the IS-1825ASRH Pulse Width Modulator Controller June 2002 Introduction The intense, heavy ion environment encountered in space applications can cause a variety of effects in electronic circuitry, including single event transient SET , single event latchup


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    IS-1825ASRH -1825ASRH 400kHz; schematic diagram pulse with modulator various PWM techniques IS1825 "PWM Controller" radiation-hardened transformer 0.1uf 50v K500 PDF