DIM800DDM17-A000
Abstract: DIM800DDM17
Text: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces May 2001, version DS5433-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-3.0 March 2002
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DIM800DDM17-A000
DS5433-2
DS5433-3
DIM800DDM17-A000
DIM800DDM17
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DIM800DDM17-A000
Abstract: DIM800DDM17-A bi-directional switches IGBT
Text: 6 3 DS5433-5 June 2009 LN26751 14 ±0.2 ±0.2 Replaces DS5433-4.1 July 2002 Dual Switch IGBT Module 11.5 DIM800DDM17-A000 FEATURES ±0.2 • ±0.2 10µs Short Circuit Withstand 18 6 x O7 KEY PARAMETERS 28 ±0.5 High44 Thermal ±0.2 Cycling Capability
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DS5433-5
LN26751)
DS5433-4
DIM800DDM17-A000
DIM800DDM17-A000
DIM800DDM17-A
bi-directional switches IGBT
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bi-directional switches IGBT
Abstract: 6.5kV IGBT AN5700 dynex igbt die bi-directional IGBT igbt full h bridge DIM200PLM33-A019 bidirectional switch "bi-directional switches" IGBT switched reluctance machine
Text: AN5700 - IGBT/FRD Identifier Part Numbering Scheme For IGBT & FRD Modules AN5700-1.4 February 2004 Since February 2001 Dynex has used the following part numbering scheme for new releases of product. A typical product has a part number of the form DIM800DDM17-A000, made up as below:
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AN5700
AN5700-1
DIM800DDM17-A000,
M800D
bi-directional switches IGBT
6.5kV IGBT
dynex igbt die
bi-directional IGBT
igbt full h bridge
DIM200PLM33-A019
bidirectional switch
"bi-directional switches" IGBT
switched reluctance machine
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bi-directional switches IGBT
Abstract: DIM800DDM17-A000
Text: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces March 2002, version DS5433-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-4.1 July 2002
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DIM800DDM17-A000
DS5433-3
DS5433-4
240arantee
bi-directional switches IGBT
DIM800DDM17-A000
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Untitled
Abstract: No abstract text available
Text: DIM800DDM17-E000 DIM800DDM17-E000 Dual Switch IGBT Module PDS5619-1.2 June 2003 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand
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DIM800DDM17-E000
PDS5619-1
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Untitled
Abstract: No abstract text available
Text: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Preliminary Information DS5433-2.0 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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DIM800DDM17-A000
DS5433-2
DIM800DDM17-A000
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bi-directional switches IGBT
Abstract: DIM800DDM17-A000
Text: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces March 2002, version DS5433-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-4.1 July 2002
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DIM800DDM17-A000
DS5433-3
DS5433-4
240arantee
bi-directional switches IGBT
DIM800DDM17-A000
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PDF
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DIM800DDM17-A000
Abstract: No abstract text available
Text: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces March 2002, version DS5433-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-4.1 July 2002
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Original
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DIM800DDM17-A000
DS5433-3
DS5433-4
240arantee
DIM800DDM17-A000
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Untitled
Abstract: No abstract text available
Text: DIM800DDM17-A000 Dual Switch IGBT Module Replaces DS5433-4.1 July 2002 DS5433-5 June 2009 LN26751 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)
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DIM800DDM17-A000
DS5433-4
DS5433-5
LN26751)
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DIM800DDM17-E000
Abstract: No abstract text available
Text: DIM800DDM17-E000 DIM800DDM17-E000 Dual Switch IGBT Module PDS5619-1.2 June 2003 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand
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DIM800DDM17-E000
PDS5619-1
DIM800DDM17-E000
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Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
Tag 225-600
IGBT cross-reference
SCR GTO
fast diode 3000V
tag 200-600
522.500. 5 x 20 mm
HVDC plus
scr phase control battery charger
esm 30 450 v
GTO thyristor Application notes
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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IC1 723
Abstract: IGBT THEORY AND APPLICATIONS IGBT parallel DIM800DDM17-A000 AN5505 failure analysis IGBT DIM800DDM17
Text: AN5505 Application Note AN5505 Parallel Operation of Dynex IGBT Modules Application Note Replaces October 2001, version AN5505-1.2 AN5505-1.3 July 2002 INTRODUCTION IGBT modules can be connected in parallel to create a switch with a higher current rating. However, successful paralleling of
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AN5505
AN5505
AN5505-1
IC1 723
IGBT THEORY AND APPLICATIONS
IGBT parallel
DIM800DDM17-A000
failure analysis IGBT
DIM800DDM17
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DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches
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4500Vee
DS5766-4.
DCR370T
DCR370T18
DCR1560F26
DCR1560F
drd2960y40
alsic 105
DCR1710F18
DCR650G34
DCR2760V
DRD850D34
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2sd315ai
Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
Text: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.
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AN5946-2
LN26854
2sd315ai
2sc0108t
bi-directional switch IGBT driver
2SC0435T
2SD106AI
2SD106Ai-17
2sc0108
2sc0435
CT-Concept
igbt trafo drivers
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DCR2950W
Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
igbt types 6000v
igbt sinewave inverter
thyristor phase control 600v to 1600v
DCR2630Y
Tag 225-600
PT85QWX45
HVDC plus
bi-directional switches IGBT
GTO hvdc thyristor
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MP02X
Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
Text: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW
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OCR Scan
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ACR300SG
ACR400SE
ACR44U
DCR1002SF
DCR1003SF
DCR1006SF
DCR1008SF
DCR1020SF
DCR1021SF
DCR1374SBA
MP02X
DCR10
DYNEX
DG648
DCR1596SW
DIM200PHM33
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108X62
Abstract: No abstract text available
Text: powerline igbt modules IG B T M o d u le s Generic Part Number Voltage Grade Current Rating Circuit Type VcES V 'c (A) @ T case CQ Max. Saturation Current Voltage VCE(SAT) Rating (Typical) «CM (A) (V) Total Switching Energy Isolation Voltage (mJ) v« (kV)
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OCR Scan
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GP250MHB06S
GP350MHB06S
GP500LSS06S
GP200MHS12
GP200MKS12
GP200MLS12
DIM400DDM12
DIM400LSS12
DIM800DDM12
DIM800FSM12
108X62
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