DIN 41876 Search Results

DIN 41876 Result Highlights (5)

Part	Manufacturer	Description	Download
CS-DNPDM6MMX2-006	Amphenol Cables on Demand	Amphenol CS-DNPDM6MMX2-006 Premium 6-pin Mini-DIN 6 (MD6) Cable - Mini-DIN 6 Male to Mini-DIN 6 Male 6ft	Datasheet
BPBS8B21P3LF	Amphenol Communications Solutions	Din Accessory Cover
65195-001LF	Amphenol Communications Solutions	Din Accessory Latching Lock
515903532189311LF	Amphenol Communications Solutions	DIN STANDARD POWER
68341-001LF	Amphenol Communications Solutions	Din Accessory C.T.W Housing

DIN 41876 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: ^£.mi- 2onductoi , Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BCX23 BCX39 BCX 23 and BOX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case (18 A 3 DIN 41876). The collector is electrically connected to the case. These transistors	Original	BCX23 BCX39	PDF
2N2222 circuit Abstract: 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance Text: 2N2222 NPN Silicon Epitaxial Planar Transistor with high cutoff frequency, for high speed switching mox.0.5^ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings	OCR Scan	2N2222 2N2222 circuit 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance	PDF
2N2222A Abstract: J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a Text: 2N2221A, 2N2222A NPN Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching mox.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings	OCR Scan	2N2221A, 2N2222A 2N2222A 2N2221A J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a	PDF
BC260 Abstract: No abstract text available Text: BC260 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. m ax .0.5 $ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case	OCR Scan	BC260 BC260	PDF
Untitled Abstract: No abstract text available Text: SIEMENS The BPX43 is an epitaxial NPN silicon planar phototransistor in a T018 18 A 3 DIN 41876 package with a glass lens. The collector is electrically connected to the metallic case. Sym. Value Unit ^S m a x 880 nm 450 to 1100 Spectral Sensitivity Range	OCR Scan	BPX43 PCE25 BPX43	PDF
BFR15 Abstract: Q62702-F322 CP12e transistor G25 transistor 2e CER20 TRANSISTOR CP12e 042PF Text: BFR15 NPN Transistor for low-noise broadband and antenna amplifiers BFR15 is an epitaxial NPN silicon planar RF transistor in the case 1 8 A 4 DIN 41876 TO-72 for universal application up into the GHz range, e.g. for low-noise broadband and antenna amplifiers.	OCR Scan	BFR15 BFR15 Q62702-F322 rcaseg70 ip22e cp12e= 103MHz Q62702-F322 CP12e transistor G25 transistor 2e CER20 TRANSISTOR CP12e 042PF	PDF
Siemens 1736 Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312 Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for	OCR Scan	0235bG5 Q004312 BCY66 Q60203-Y66 TcaseS45Â fi23Sb05 Q0QM31? 120Hz Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312	PDF
BC266 Abstract: BC261 BC262 BC263 BC-261 Text: BC261 . . BC266 PNP Silicon Epitaxial Planar Transistors for switching and am plifier applications The transistors are subdivided into three groups A, B and C according to their current gain. BC263 is a low noise type. max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876	OCR Scan	BC261 BC266 BC263 BC266 BC261 BC262, BC262 BC-261	PDF
10RJ Abstract: KCB05 BCY67 F-05 Q62702-C254 510zma 5v 10rj Text: 55C D • fl235bOS 000431^ 1 SIEG BCY67 7 ^ ^ 7 - Z- 3 PNP Silicon Planartransistor SIEMENS AKTIENfiESELLSCHAF 04319 BCY 67 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided	OCR Scan	235b05 04-3L9 BCY67 Q62702-C254 mb-25 10RJ KCB05 F-05 Q62702-C254 510zma 5v 10rj	PDF
BFW30 Abstract: bfw 10 transistor bfw 30 transistor transistor BFW 10 Text: BFW 30 NPN Silicon planar RF transistor BFW 30 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 TO-72 , designed for universal application up into the GH z range, e.g. for vertical amplifiers in broadband oscillographs and for broadband antenna amplifiers. Terminals	OCR Scan	BFW30 BFW30 Q62702-F bfw 10 transistor bfw 30 transistor transistor BFW 10	PDF
BSX48 Abstract: BSX49 sm 58 b transistors M502 Q60218-X48 Q60218-X49 q406 1h3c Transistor BSX 95 Text: 25C D • A23£bQ5 0DQMÖ1S 2. ■ S I E 6 BSX48 BSX49 NPN Silicon Planar Transistors - SIEMENS AKTIEN6ESE LL SCH AF BSX 48 and BSX 49 are double diffused epitaxial silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . Their collectors are electrically connected to the case.	OCR Scan	fl23SbOS BSX48 BSX49 Q60218-X48 Q60218-X49 BSX49 sm 58 b transistors M502 Q60218-X48 Q60218-X49 q406 1h3c Transistor BSX 95	PDF
BFR15A Abstract: 200MHZ S70C Text: IMPN -Transistor für rauscharme Breitband- und Antennenverstärker BFR 15A B F R 1 5 A ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18A 4 DIN 41876 TO-72 für allgemeine Verwendung bis in den GHz-Bereich, z. B. für rauscharme Breitband- und Antennenverstärker.	OCR Scan	BFR15A Q62702-F460 200MHZ 200MHZ S70C	PDF
BFX62 Abstract: Transistor BFX 25 Transistor BFX 4 Transistor BFX Text: BFX62 NPN Transistor for amplifier and oscillator stages up to 1 GHz BFX 62 is an NPN silicon planar transistor in a case 18A 4 DIN 41876 TO-72 . The leads are insulated from the case. The transistor is particularly suitable for amplifier and oscillator stages at frequencies up to 1 GHz.	OCR Scan	BFX62 Q60206-X -C12e BFX62 Transistor BFX 25 Transistor BFX 4 Transistor BFX	PDF
BFX60 Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier	OCR Scan	BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier	PDF

transistor bc 541 Abstract: TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa Text: 55C D • û23St.D5 OOQ405Ö T PNP Germanium RF Transistor -SIEMENS A F 139 - AKTIENGESELLSCHAF 31-07 for input stages, m ixer and oscillator stages up to 860 MHz AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.	OCR Scan	OOQ405Ö Q60106-X139 135H-- AF139 transistor bc 541 TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa	PDF
pm4020 Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor Text: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads	OCR Scan	23SbOS AF240 Q60106-X240 -13J5Ã TambS45Â -CC80 y12bl pm4020 AF279 p21b AF279S 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor	PDF
Untitled Abstract: No abstract text available Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for	OCR Scan	023SbQS Q004312 60203-Y66 BCY66 QQ0M31Ö	PDF
BFX59 Abstract: Transistor BFX 25 BFX59F Text: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran	OCR Scan	Q60206-X59 Q60206-X59-S5 BFX59 Transistor BFX 25 BFX59F	PDF
Transistor BSX 95 Abstract: BSX48 BSX49 Q60218-X48 Q60218-X49 IJ.AN Text: BSX 48, BSX 49 NPN Transistors fo r switching applications Transistors BSX 48 and BSX 49 are double diffused epitaxial silicon planar transistors in a case 18 A 3 DIN 41876 T O -18 . The collector is electrically connected to the case. The transistors are for use as high-speed switches, and are particularly suitable for	OCR Scan	Q60218-X48 Q60218-X49 105iiA BSX48 Transistor BSX 95 BSX48 BSX49 Q60218-X48 Q60218-X49 IJ.AN	PDF
F25 transistor Abstract: AFY37 60106-Y Germanium Transistor Germanium mesa transistor 60106 Text: AFY37 The A FY37 is a germanium PNP RF epitaxial mesa transistor in a case 18 A 4 DIN 41876 TO-72 . The terminals are electrically insulated from the case. The A FY 37 is particularly designed for use in antenna amplifiers up to 900 MHz. O rder num ber Q 6 0 1 0 6 - Y 37	OCR Scan	AFY37 AFY37 60106-Y 100MHz) 800MHz) F25 transistor Germanium Transistor Germanium mesa transistor 60106	PDF
AF239 Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.	OCR Scan	A23Sb05 AF239 Q60106-X239 T1-0221) transistor h5c AF 239 0406H F239 Q60106-X239 WTV4 AAO-4A	PDF
BFX89 Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684 Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general	OCR Scan	23ShQS Q62702-F296 2JS41W BFX89 Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684	PDF
BFX59 Abstract: Transistor BFX 25 BFX59F Text: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran	OCR Scan	Q60206-X59 Q60206-X59-S5 BFX59 Transistor BFX 25 BFX59F	PDF
AF139 Abstract: OOQ405 mz 1540 Text: ESC D • flE35t.05 0004056 T B IS IE G t n PNP Germanium RF Transistor AF139 -SIEMENS AKTIENGESELLSCHAF - ~ T ~ 3 I~ 0 7 for input stages, mixer and oscillator stages up to 8 6 0 M H z AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads	OCR Scan	OOQ405Ã AF139 Q60106-X139 200MHz- A800MHZ- AF139 10lHHz OOQ405 mz 1540	PDF

DIN 41876 Search Results

DIN 41876 Result Highlights (5)

DIN 41876 Datasheets Context Search

Untitled

2N2222 circuit

2N2222A

BC260

Untitled

BFR15

Siemens 1736

BC266

10RJ

BFW30

BSX48

BFR15A

BFX62

BFX60

transistor bc 541

pm4020

Untitled

BFX59

Transistor BSX 95

F25 transistor

AF239

BFX89

BFX59

AF139