din 82 RAA 0.8
Abstract: din 82
Text: 1,35 2,80 5 6 7 8 -0,10 A 6 -0,10 1,20 A +0,10 4 B B 2 0,0 C C 17,30 +0,10 2,30 -0,08 9 +0,15 D D 4 +0,10 Rändel / Knurl DIN 82-RAA 0,6 E Technische Änderungen vorbehalten / all data subject to amendment without notice 2,90 2,40 -0,10 The reproduction, distribution and utilization of this document as well as the communication of its contents to others without express authorization is
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82-RAA
din 82 RAA 0.8
din 82
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EM11B
Abstract: CMS6432LBW M2A2 m4a4 FMS6432
Text: C F MS6432LBx–75Ex 64M(2Mx32) Low Power SDRAM Revision 0.7 Sep. 2007 Rev. 0.7, Sep. ‘07 C(F)MS6432LBx–75Ex Document Title 64M(2Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Sep.09th, 2005 Preliminary
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MS6432LBx
2Mx32)
EM11B
CMS6432LBW
M2A2
m4a4
FMS6432
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Untitled
Abstract: No abstract text available
Text: FMS6432LBx–75Ex 64M 2Mx32 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 FMS6432LBx–75Ex Document Title 64M(2Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Sep.09th, 2005 Preliminary 0.1 Change Part Numbering of Device Version (AÆB)
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FMS6432LBxâ
2Mx32)
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Untitled
Abstract: No abstract text available
Text: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1
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CMS4A16LAx
8Mx16)
160ns
350uA
400uA
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Untitled
Abstract: No abstract text available
Text: CMS4A32LAx–75Ex 128M 4Mx32 Low Power SDRAM Revision 0.6 May. 2007 Rev. 0.6, May. ‘07 CMS4A32LAx–75Ex Document Title 128M(4Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1
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CMS4A32LAxâ
4Mx32)
160ns
350uA
400uA
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Untitled
Abstract: No abstract text available
Text: FMS6432LBx–75xx 64M 2Mx32 Low Power SDRAM Revision 0.4 Aug. 2006 Rev. 0.4, Aug. ‘06 FMS6432LBx–75xx Document Title 64M(2Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Sep.13th, 2005 Preliminary 0.1 Change Part Numbering of Device Version (AÆB)
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FMS6432LBxâ
2Mx32)
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Untitled
Abstract: No abstract text available
Text: CMS4S32LAx–75xx 256M 8Mx32 Low Power SDRAM 2 pcs of 128Mb components Revision 0.3 Dec. 2006 Rev. 0.3, Dec. CMS4S32LAx–75xx Document Title 256M(8Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft
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CMS4S32LAxâ
8Mx32)
128Mb
800uA
900uA
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CBB Capacitor Selection Guide
Abstract: No abstract text available
Text: CMS4A16LAx–75xx 128M 8Mx16 Low Power SDRAM Revision 0.4 Nov. 2006 Rev. 0.4, Nov. ‘06 CMS4A16LAx–75xx Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1
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CMS4A16LAx
8Mx16)
400uA
450uA
54ball
CMS4A16LAF
CBB Capacitor Selection Guide
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transistor A7
Abstract: CMS3232LAF CMS3232LAG CMS3232LAH
Text: CMS3232LAx-75xx 32M 1Mx32 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3232LAx-75xx Document Title 32M(1Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Feb. 18th, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions
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CMS3232LAx-75xx
1Mx32)
transistor A7
CMS3232LAF
CMS3232LAG
CMS3232LAH
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CMS6416LAF
Abstract: CMS6416LAG CMS6416LAH CMS6432LBH
Text: CMS6416LAx-15Ex 64M 4Mx16 Low Power SDRAM Revision 1.3 November, 2005 Rev1.3, Nov. 2005 CMS6416LAx-15Ex Document Title 64M(4Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Jun.25th, 2004 Preliminary 0.1 Correct typo.
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CMS6416LAx-15Ex
4Mx16)
CMS6416LAF
CMS6416LAG
CMS6416LAH
CMS6432LBH
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CMS3216LAF
Abstract: CMS3216LAG CMS3216LAH
Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions
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CMS3216LAx-75xx
2Mx16)
CMS3216LAF
CMS3216LAG
CMS3216LAH
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CMS3216LAF
Abstract: CMS3216LAG CMS3216LAH
Text: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.1 November, 2005 Rev0.1, Nov. 2005 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions
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CMS3216LAx-75Ex
2Mx16)
CMS3216LAF
CMS3216LAG
CMS3216LAH
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Untitled
Abstract: No abstract text available
Text: CMS3232LAx-75Ex 32M 1Mx32 Low Power SDRAM Revision 0.2 August, 2006 Rev0.2, Aug. 2006 CMS3232LAx-75Ex Document Title 32M(1Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar. 3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions
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CMS3232LAx-75Ex
1Mx32)
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CMS3216LAF
Abstract: CMS3216LAG CMS3216LAH EM11B
Text: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.2 August, 2006 Rev0.2, Aug. 2006 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions
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CMS3216LAx-75Ex
2Mx16)
CMS3216LAF
CMS3216LAG
CMS3216LAH
EM11B
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CYL008M162FFBU-1ABAI
Abstract: M2A2
Text: PRELIMINARY CYL008M162FFB 128-Mbit 8-Mbit x 16 Low-Power MoBL4 SDRAM Features — Deep Sleep Mode — Self Refresh Mode; standard and low power • Functionality • Temperature: –40°C to +85°C — Internal 4 Bank Operation • 8 mm x 8 mm x 1.0 mm 54-ball 0.8 mm FBGA Package
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CYL008M162FFB
128-Mbit
54-ball
CYL008M162FFB
CYL008M162FFBU-1ABAI
M2A2
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MCP 67 MV- A2
Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
Text: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1
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KAA00B209M-TGxx
16Mx16)
Flash/32M
2Mx16)
UtRAM/128M
2Mx16x4Banks)
127-Ball
80x12
08MAX
MCP 67 MV- A2
SAMSUNG MCp
samsung "nor flash" sensing
nand mcp samsung ka
SAMSUNG mcp Reliability spec
Product Selection Guide samsung 2013
MCP NAND, DRAM, NOR
SAMSUNG 256Mb mcp Qualification Reliability
14CLK
UtRAM Density
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SAMSUNG MCP
Abstract: 1g nand mcp KBE00S003M-D411 KBE00S003M Flash MCp nand DRAM 107-ball MCP NOR FLASH SDRAM samsung "nor flash" sensing MCP MEMORY UtRAM Density MCP 1Gb nand 512mb dram 130
Text: KBE00S003M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KBE00S003M-D411
256Mb
107-Ball
80x13
SAMSUNG MCP
1g nand mcp
KBE00S003M-D411
KBE00S003M
Flash MCp nand DRAM 107-ball
MCP NOR FLASH SDRAM
samsung "nor flash" sensing
MCP MEMORY
UtRAM Density
MCP 1Gb nand 512mb dram 130
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MCP 1Gb nand 512mb dram 130
Abstract: SAMSUNG MCP MCP 67 MV- A2 137FBGA KBE00S009M KBE00S009M-D411 UtRAM Density
Text: KBE00S009M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KBE00S009M-D411
256Mb
137-Ball
80x14
MCP 1Gb nand 512mb dram 130
SAMSUNG MCP
MCP 67 MV- A2
137FBGA
KBE00S009M
KBE00S009M-D411
UtRAM Density
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SAMSUNG MCP
Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6
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KAA00BB07M-DGUV
16Mx16)
4Mx16)
4Mx16x4Banks)
256Mb
137-Ball
80x14
SAMSUNG MCP
KAA00BB07M-DGUV
UtRAM Density
samsung nor nand ddr mcp
nand sdram mcp
M/BVS mcp ohm
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NAND FLASH DDP
Abstract: SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density
Text: KBE00F005A-D411 MCP MEMORY MCP Specification 512Mb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KBE00F005A-D411
512Mb
256Mb
137-Ball
80x14
NAND FLASH DDP
SAMSUNG MCP
MCP 256M nand 128M mobile sdram
137FBGA
MCP 67 MV- A2
8188
KBE00F005A
KBE00F005A-D411
MCP NOR FLASH SDRAM
UtRAM Density
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S73WS256N
Abstract: din 82 RGV
Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION
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S73WS256N
32M/16M
16-bit)
16-bit
din 82 RGV
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kbe00f003m
Abstract: SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130
Text: KBE00G003M-D411 MCP MEMORY NNDD512512256256BBFF NAND 512Mb*2 + Mobile SDRAM 256Mb*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KBE00G003M-D411
NNDD512512256256BBFF
512Mb
256Mb
107-Ball
80x13
kbe00f003m
SAMSUNG MCP
Flash MCp nand DRAM 107-ball
NAND FLASH DDP
samsung mcp 107-ball
d411
KBE00G003M-D411
NNDD512512256256BBFF
UtRAM Density
MCP 1Gb 512Mb 130
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TCMS
Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
Text: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S72WS256N
16M/32M
16-bit)
16-bit
TCMS
S29WS-N
S72WS256ND0
S72WS256NDE
S72WS256NEE
225 J 250 AVA CL 20
JEP95
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TCMS
Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION
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S73WS256N
32M/16M
16-bit)
16-bit
S72WS256N
TCMS
TRANSISTOR BFW 11 pin diagram
marking code qa1 148
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