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    DIOD Search Results

    DIOD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    DIOD Price and Stock

    Puls Gmbh YR2.DIODE

    DIODE REDUNDANCY MOD 10-60V 20A
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    DigiKey YR2.DIODE Box 158 1
    • 1 $126
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    Onlinecomponents.com YR2.DIODE 2
    • 1 $126
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    Master Electronics YR2.DIODE 2
    • 1 $126
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    Puls Gmbh YRM2.DIODE

    DIODE REDUNDANCY MOD 24-60V 20A
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    DigiKey YRM2.DIODE Box 22 1
    • 1 $162
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    Onlinecomponents.com YRM2.DIODE 4
    • 1 $162
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    Master Electronics YRM2.DIODE 4
    • 1 $162
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    onsemi DIODESKITFS

    KIT DIODE 10EA OF 10 VALUES
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    DigiKey DIODESKITFS 5 1
    • 1 $25.14
    • 10 $21.836
    • 100 $21.836
    • 1000 $21.836
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    Eaton Bussmann HS-ESD-TVS-DIODE-KIT

    KIT TVS DIODE HIGH SPEED ESD
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    DigiKey HS-ESD-TVS-DIODE-KIT 4 1
    • 1 $17.34
    • 10 $15.068
    • 100 $15.068
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    • 10000 $15.068
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    Infineon Technologies AG REFAUDIODMA12040PTOBO1

    EVAL BOARD FOR MA12040P
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    DigiKey REFAUDIODMA12040PTOBO1 Bulk 4 1
    • 1 $58.99
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    Mouser Electronics REFAUDIODMA12040PTOBO1
    • 1 $62.99
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    Chip1Stop REFAUDIODMA12040PTOBO1 Bulk 10
    • 1 $41.1
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    DIOD Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10A01 Diodes 10A RECTIFIER Original PDF
    10A01 Diodes 10 A Rectifier Original PDF
    10A01 Diodes 10A RECTIFIER Original PDF
    10A01-F Diodes DIODE STANDARD RECOVERY RECTIFIER 50V 10A 2R-6 Original PDF
    10A01-T Diodes DIODE STANDARD RECOVERY RECTIFIER 50V 10A 2R-6 T/R Original PDF
    10A01-T Diodes RECTIFIER STANDARD SINGLE 10A 50V 50 600A-ifsm 10uA-ir 1V-vf R6 500/REEL-13 Original PDF
    10A02 Diodes 10A RECTIFIER Original PDF
    10A02 Diodes 10 A Rectifier Original PDF
    10A02 Diodes 10A RECTIFIER Original PDF
    10A02-F Diodes DIODE STANDARD RECOVERY RECTIFIER 100V 10A 2R-6 Original PDF
    10A02-T Diodes DIODE STANDARD RECOVERY RECTIFIER 100V 10A 2R-6 T/R Original PDF
    10A02-T Diodes RECTIFIER STANDARD SINGLE 10A 100V 100 600A-ifsm 10uA-ir 1V-vf R6 500/REEL-13 Original PDF
    10A03 Diodes 10A RECTIFIER Original PDF
    10A03 Diodes 10 A Rectifier Original PDF
    10A03 Diodes 10A RECTIFIER Original PDF
    10A03-F Diodes DIODE STANDARD RECOVERY RECTIFIER 200V 10A 2R-6 Original PDF
    10A03-T Diodes DIODE STANDARD RECOVERY RECTIFIER 200V 10A 2R-6 T/R Original PDF
    10A03-T Diodes RECTIFIER STANDARD SINGLE 10A 200V 200 600A-ifsm 10uA-ir 1V-vf R6 500/REEL-13 Original PDF
    10A04 Diodes 10A RECTIFIER Original PDF
    10A04 Diodes 10A RECTIFIER Original PDF
    ...

    DIOD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C 34 F

    Abstract: 1SV274 D234
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package


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    PDF 1SV274 C25V/C28V 470MHz C 34 F 1SV274 D234

    2SD1294

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain


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    PDF 2SD1294 2SD1294

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA PHOTO RELAY TLP595A Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The


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    PDF TLP595A 300mA 2500Vrms UL1577, E67349 TLP595A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature


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    PDF 1SS315

    T500mA

    Abstract: No abstract text available
    Text: TD62107F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62107F DARLINGTON DRIVER WITH ENABLE_ The T D 6 2 1 0 7 F is c omprised of four NPN d a rlington output stages and enable inputs w h i c h can gate the outputs. All o u t p u t s feature integral c lamp diodes for s w i t c h ­


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    PDF TD62107F TD62107F 750mA T500mA

    1n758

    Abstract: No abstract text available
    Text: TYPES 1N746 THRU 1N759, 1N746A THRU 1N759A SILICON VOLTAGE-REGULATOR DIODES B U L L E T IN NO . D L -S 7311942, M A R C H 1973 V z . . . 3.3 V to 12 V, P d • • •400 mW • Available in 5% and 10% Tolerances • Rugged Double-Plug Construction description and mechanical data


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    PDF 1N746 1N759, 1N746A 1N759A 1N757, 1N758, 1n758

    Reel Taping Specification JEDEC

    Abstract: No abstract text available
    Text: i V. AXIAL TAPING FOR DO-35 PACKAGE A. PRODUCT NAMING SYSTEM Type of package for shipment is classified by a symbol suffixed to a diode name. [Example] 1N4148 TPA2 © - © i- © B. Indicates the taping specifications Indicates JEDEC registration no.


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    PDF DO-35 1N4148 Reel Taping Specification JEDEC

    dg1u

    Abstract: TLP624
    Text: TLP624,-2,-4 GaAs IRED a PHOTO-TRANSISTOR TLP6 24 PRO G RAM M ABLE CONTROLLERS AC /DC-INPUT M ODULE TELECOM M UNICATIO N The TOSHIBA TLP624, -2 and -4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor. The TLP624-2 offers two isolated channels in an eight lead plastic


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    PDF TLP624 TLP624, TLP624-2 TLP624-4 5000Vrms fr39dll FLP624_ fr39dU dg1u

    Untitled

    Abstract: No abstract text available
    Text: GaAÄAs IRED a PHOTO-MOS FET TLP595G TELECOMMUNICATION Unit in m m DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 G condists of an a l u m i n u m g alium ar s e n i d e infra red e m i tting diode o p t i c a l l y coupled to a p h o t o - M O S FET in a eight lead plastic D IP


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    PDF TLP595G 150mA

    TA8707

    Abstract: SSOP-16 TA8756F TA8709F
    Text: Camera ICs A5 Function Type No. 77 Features Package H-bridgo Upper Side Built in bias resistors SSOP16 H-bridge Built in bias resistors, free wheeling diodes (lower side) SSOP16 4 channel sink drivers Drivers for LED and plunger for camera Drivers for film loading motor


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    PDF TA8300F TA8302F TA8303F TA8304F TA8312F TA8313F TA8307F SSOP16 TA87S6F. SSOP16 TA8707 SSOP-16 TA8756F TA8709F

    MG50G2CL3

    Abstract: Mg50G2cl mg50g2
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)


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    PDF MG50G2CL3 MG50G2CL3 Mg50G2cl mg50g2

    TLP338

    Abstract: No abstract text available
    Text: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.


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    PDF TLP337 TLP338 150mA. 150mA 5000Vrms E67349 TLP338

    1s1555 diode

    Abstract: silicon diode 151555 1s1555 silicon diode 1S1555 1s1554 diode 1S1554 1S1553/1S1555
    Text: TOSHIBA W? {DISCRETE/OPTO} 9097250 TOSHIBA DeT| TDT?2SG 0 0 0 ^ 7 D I S C R E T E / O P T O _^ 67C 09297 3 | D. / - Silicon Epitaxial "Planar Type 1S1553-1S1555 Diode Unit in tran GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES:


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    PDF 1S1553-1S1555 1S1553 1S1554 1S1555 100mA 1s1555 diode silicon diode 151555 silicon diode 1S1555 1s1554 diode 1S1553/1S1555

    1N4447

    Abstract: No abstract text available
    Text: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .


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    PDF 1N4148. 1N4149, 1N4148 1N914 1N4531 1N4447 1N916A 1N4149 1N916 1N4448 1N4447

    MG400H1FK1

    Abstract: LF400A
    Text: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage


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    PDF MG400H1FK1 TjSl85' MG400H1FK1 LF400A

    S1854

    Abstract: transistor s1854 s1854 a s1854 equivalent ic s1854 SI854 REGULATOR s1854 transistor s1854 ic error REGULATOR IC FOR 150V s1854 B1036
    Text: SILICON N-SUBSTRATE MONOLITHIC TYPE S1854 SI854 IS A REGULATOR DRIVER FOR LINE OPERATED TV, Unit in mm WHICH ARE BUILT UP OF ERROR AMPLIFIER TRANSISTOR, 10.3MAX. 0&6±O,2 STANDARD VOLTAGE ZENER DIODE AND POLY-SILICON RESISTORS ON MONOLITHIC CHIP. FEATURES:


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    PDF S1854 SI854 S1854 transistor s1854 s1854 a s1854 equivalent ic s1854 REGULATOR s1854 transistor s1854 ic error REGULATOR IC FOR 150V s1854 B1036

    TLP55

    Abstract: No abstract text available
    Text: T O SH IB A TLP5590GM TOSHIBA PHOTOCOUPLER GaAM s IRED + PHOTO-IC TLP55 90GM) TRANSISTOR INVERTOR U nit in mm INVERTER FOR AIR CONDITIONER LINE RECEIVER IPM INTERFACES The TOSHIBA TLP559 IGM) consists of a GaA£As high-output light emitting diode and a high speed detector of one chip photo diodetransistor.


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    PDF TLP5590GM) TLP55 TLP559 TLP559 200pF,

    TLP639

    Abstract: TLP639-F TLP639F VDE-0110
    Text: TLP639F GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA Unit in mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT 6 5 4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP639F consists of two gallium arsenide infrared emitting diode connected inverse parallel,


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    PDF TLP639F TLP639F TLP639. 5000Vrms 500Vac 883/VDE0883/6 804/VDE0804/1 IEC65/VDE0860/8 IEC380/VDE0806/8 IEC435/VDE0805/Draft TLP639 TLP639-F VDE-0110

    MG30G2YM1

    Abstract: LD30A
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


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    PDF MG30G2YM1 15AIN-SOURCE MG30G2YM1 LD30A

    A1N4752

    Abstract: 1N4728 1N4732
    Text: TYPES 1N4728 THRU 1N4752, 1N4728A THRU 1N4752A SILICON VOLTAGE-REGULATOR DIODES B U L L E T IN f N O . D L -S 7 3 1 1 9 4 9 , M A R C H 1 9 7 3 V z . . . 3.3 V to 33 V PD • • • 1 W • Available in 5% and 10% Tolerances • Rugged Double-Plug Construction


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    PDF 1N4728 1N4752, 1N4728A 1N4752A A1N4752 1N4732

    MG75M2CK1

    Abstract: tkp7
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain


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    PDF MG75M2CK1 MG75M2CK1 tkp7

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TA8303F TO SH IBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TA 8303F MOTOR DRIVER FOR CAMERA TA8303F is Multi Chip 1C incorporates 6 low saturation discrete transistors w hich equipped Bias resistor and FreeW heeling diode. This 1C is suitable for a camera use motor drive


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    PDF TA8303F TA8303F SSOP16 980910EBA2 300mA 500mA SSOP16-P-225-1

    Untitled

    Abstract: No abstract text available
    Text: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this


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    PDF UC1610 UC3610 UC3610 ambient40V UC1611

    T41G

    Abstract: No abstract text available
    Text: OSHIBA < LASER/FBR OPTIC 01 t • 10172S2 DOlbDIS 7 ■ TOSb O T-41-G7 TOSHIBA LASER DIODE TOLD 370 Features • Wavelength 1,55/im • Simple Coaxial Package • Suitable for Local Subscriber Networks • Single-mode Fiber Pigtail 10/125/tm) • Hermetically Sealed


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    PDF 10172S2 T-41-G7 55/im 10/125/tm) T-41-50 1000o 50/125pm) T41G