1100 CHIP RESISTOR NETWORK
Abstract: No abstract text available
Text: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW610B-1 Layout Features ♦ ♦ ♦ V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction
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MA4SW610B-1
MA4SW610B-1
1100 CHIP RESISTOR NETWORK
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PIN diode switch
Abstract: SN62 PB36 ag2 solder preform SN62 PB36 ag2 MA4SW510B-1 MA4SW610B-1
Text: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW510B-1 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description
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MA4SW610B-1
MA4SW510B-1
MA4SW610B-1
PIN diode switch
SN62 PB36 ag2 solder preform
SN62 PB36 ag2
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SN62 PB36 ag2 solder preform
Abstract: SN62 PB36 ag2 MA4SW510B-1
Text: MA4SW510B-1 SP5T PIN Diode Switch with Integrated Bias Network MA4SW510B-1 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.8 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description
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MA4SW510B-1
MA4SW510B-1
SN62 PB36 ag2 solder preform
SN62 PB36 ag2
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IR3575
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 35 75 Vdc IF 100 mAdc
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MMBD2835LT1
MMBD2836LT1
MMBD2836LT1
236AB)
MAR218A
MSC1621T1
MSC2404
MSD1819A
MV1620
IR3575
BC237
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Untitled
Abstract: No abstract text available
Text: MA4BN1840-2 Monolithic HMIC Integrated Bias Network Rev. V4 Features • Broad Bandwidth Specified 18 to 40 GHz Usable 10 GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation J1 & J2 Matched to 50 Ω
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MA4BN1840-2
MA4BN1840-2
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PDF
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Untitled
Abstract: No abstract text available
Text: MA4BN1840-1 Monolithic HMIC Integrated Bias Network Rev. V4 Features • Broad Bandwidth Specified 18 to 40 GHz Usable 10 GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation J1 & J2 Matched to 50 Ω
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MA4BN1840-1
MA4BN1840-1
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30V-8A
Abstract: CET453N 8a 817 voltage 67A SOT 23 6
Text: CET453N March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 8A , RDS ON =28mΩ @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. G D S D 8 S D SOT-223 S G G SOT-223 (J23Z)
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CET453N
OT-223
OT-223
30V-8A
CET453N
8a 817 voltage
67A SOT 23 6
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PDF
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BC103C
Abstract: bc 103
Text: SAMSUNG SEMICONDUCTOR INC 02 KS54HCTLS j2 ß § KS74HCTLS DE | 71b4142 □□Ob4bT S | ” Dual Pof-4 Data Selectors/Multiplexers Sele with 3-State Outputs -<3 / —y l FEATURES DESCRIPTION • • • • Each of these data selectors/multiplexers contains inverters
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OCR Scan
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71b4142
KS54HCTLS
KS74HCTLS
7Tb414S
90-XO
14-Pin
BC103C
bc 103
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PDF
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2SJ295
Abstract: No abstract text available
Text: 2 S J2 95 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC
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OCR Scan
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2SJ295
2SJ280
2SJ29S
2SJ295
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PDF
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CET451AN
Abstract: No abstract text available
Text: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 7.2A , RDS ON =35mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. 8 G D S D S D SOT-223 S G G SOT-223 (J23Z)
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CET451AN
OT-223
OT-223
CET451AN
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E50U
Abstract: No abstract text available
Text: FEATURES • 5 - 3 0 0 MHz ■ 3 nSec 10% / 90% RF Transition eL MODEL NO. 100C1041 « ■ 9 nSec Switching Speed Schottky Diode SPST ■ 60 dB Isolation ■ TTL Driver ■ Non-Reflective >e- J2 50 U rh +5V GND CONT. ,.r . 2 PLACES f .xx = .02 .xxx = .010
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100C1041
E50U
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PDF
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MA4SW110
Abstract: sp3t spt31 PIN Beam lead diod
Text: M an A M P com pany Monolithic PIN Diode Switches MA4SW110, MA4SW210, MA4SW310 V2.00 Features • Broad Bandw idth - S p eciied up to 20 GH z MA4SW110 J1 J2 - 0 0— W - Usable to 26 5 G H z • Low Insertion Loss/H igh Isolation • R ugged, Fu lly M onolithic, G lass En cap s u it e d
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MA4SW110,
MA4SW210,
MA4SW310
MA4SW110
MA4SW110
sp3t spt31
PIN Beam lead diod
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PDF
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BAR14-1
Abstract: No abstract text available
Text: SIEMENS AKTIEN6ESELLSCHAF bOE H • J23Sb05 0051MaM M83 « S I E G SIEMENS -T -07-16 Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Characteristics (TA= 25° C) Maximum Ratings Type 1, V Ct pF mA V BA 585
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J23Sb05
0051MaM
SQ-fiSh50
BAR14-1
BAR14-1
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1RF530
Abstract: 1RF531 43D5571 IRF530R CGJ-1 irf530 harris IRF530 IRF531 IRF531R IRF532
Text: • 430 2 27 1 0 0 5 3 ^ 3 J2 HARRIS 72T ■ HAS IR F 530/531/532/533 IRF530R/531R/532R/533R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features T 0 -2 2 0 A B • 12A and 14A, 80V - 100V TOP VIEW • r o s ° n = 0 .1 6f2 and 0 .2 3 0
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4305E71
IRF530/531/532/533
IRF530R/531R/532R/533R
IRF530,
IRF531,
IRF532,
IRF533
IRF530R,
IRF531R,
IRF532R
1RF530
1RF531
43D5571
IRF530R
CGJ-1
irf530 harris
IRF530
IRF531
IRF531R
IRF532
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Untitled
Abstract: No abstract text available
Text: ED42_ J21 ED47_ _21_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S C R / D Í O d e IS O lS t & d POW-R-BLOK Module 210 Amperes/600-2000 Volts OUTLINE DRAWING _J T \_ Ï Ï T ED42 21, ED47 21 SCR/Diode Isolated
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Amperes/600-2000
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diode A123
Abstract: No abstract text available
Text: 2 G-1 J10 1 2 3 1 2 3 4 C4 1 2 GND 100n 3 GND MFNS1902 T11 25 R15 GND J42 J22 R16 CR C1 V5 GND 100n C11 DIODE D11 T21 MFNS1902 LED2 25 R25 GND J43 J23 R26 CG TXD RXD RTS# CTS# DTR# DSR# DCD# RI# 2 23 22 13 14 12 1 5 3 11 2 9 10 6 GND MFNS1902 T31 25 R35 J44
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MFNS1902
CAT4238
DOGL128
W128-6X8/6X9
TMGG13264
diode A123
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Modco
Abstract: ZENER DIODE J3 Zener Diode C37 DIODE SMD J9 HDR2x7 ZC41 HDR2X10 HDR2X10 SMD connector MW520 zener c26
Text: 12 13 5 5 4 3 2 1 R2E 220 4 R2D 220 3 R2C 220 2 R2B 220 1 R2A 220 1 2 14 3 15 4 16 5 +3V SW1E DIG-8 D 12 J2 CON2 EE_SEL SW1D DIG-8 13 SW1C DIG-8 15 16 SW1B DIG-8 14 SW1A DIG-8 D C5 .01uF C6 22pF C7 22pF 2 C1 3.3uF 1 +3V U1 TSSOP-24 CA1A 100pF 1 16 FR 24 GND
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TSSOP-24
100pF
100pG-8
MLP-20
AD797
74VHC221A
LP2981
MW520
ZC415-0040
Modco
ZENER DIODE J3
Zener Diode C37
DIODE SMD J9
HDR2x7
ZC41
HDR2X10
HDR2X10 SMD connector
MW520
zener c26
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Untitled
Abstract: No abstract text available
Text: FEATURES • 20-2000 MHz ■ 60 dB Isolation ■ 13 mA,+5 VDC ■ TTL Driver ■ Non-Reflective ■ Replaceable SMA Connectors & MODEL NO. CDS0623 PIN Diode SP3T +5V GND " 1” C1 J2 “ 0” C2 “ ST 0” C3 GND RF COMMON >* a s ö TYPICAL PERFORMANCE
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CDS0623
Hz/70
50MHi/35
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Untitled
Abstract: No abstract text available
Text: MCP2050 LIN Transceiver with Voltage Regulator Features • The MCP2050 is compliant with: - LIN Bus Specifications Version 1.3, and 2.x - SAE J2602-2 • Support Baud Rates Up to 20 kBaud • 43V Load Dump Protected • Maximum Continuous Input Voltage of 30V
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MCP2050
MCP2050
J2602-2
DS22299B-page
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PDF
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OH MARKING diode
Abstract: No abstract text available
Text: MCP2050 LIN Transceiver with Voltage Regulator Features • The MCP2050 is compliant with: - LIN Bus Specifications Version 1.3, and 2.x - SAE J2602-2 • Support Baud Rates Up to 20 kBaud • 43V Load Dump Protected • Maximum Continuous Input Voltage of 30V
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MCP2050
MCP2050
J2602-2
typic-3-5778-366
DS22299A-page
OH MARKING diode
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PDF
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DIODE SMD J9
Abstract: Relay RL1, 5V, 100 ohm SMD R1D diode smd diode R2C y2 smd zener ZENER SMD J9 HDR2X10 SMD connector smd cap 1206 diode smd J3 smd zener diode code J1
Text: 12 13 5 5 4 3 2 1 R2E 220 4 R2D 220 3 R2C 220 2 R2B 220 1 R2A 220 1 2 14 3 15 4 16 5 +3V SW1E DIG-8 D 12 J2 CON2 EE_SEL SW1D DIG-8 13 SW1C DIG-8 15 16 SW1B DIG-8 14 SW1A DIG-8 D C5 .01uF C6 22pF C7 22pF 2 C1 3.3uF 1 +3V U1 TSSOP-24 CA1A 100pF 1 16 FR 24 GND
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TSSOP-24
100pF
100punt)
MW520
MF108
OSC-3B0-20MHz
PE3341/2
TSSOP/MLP20
DIODE SMD J9
Relay RL1, 5V, 100 ohm
SMD R1D diode
smd diode R2C
y2 smd zener
ZENER SMD J9
HDR2X10 SMD connector
smd cap 1206
diode smd J3
smd zener diode code J1
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Untitled
Abstract: No abstract text available
Text: i n FEATURES MODEL I • 2 0 - 6 0 0 MHz U s ■ High Isolation mm ■ +36 dBm 3rd Order Intercepts XFER PIN Diode Transfar Striteli ■ TTL Driver ■ SMA Connectors 2 .00 ± .03 .08 1 .836 — 1.42 j b - ~ Ti l J2 ji J2 Ü PART IDENTIFICATION / 1.50 1.336
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50XTTLT0
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Untitled
Abstract: No abstract text available
Text: MCP2021A/2A LIN Transceiver with Voltage Regulator Features: Description • The MCP2021A/2A is compliant with: - LIN Bus Specifications Version 1.3, and 2.x. - SAE J2602-2 • Support Baud Rates up to 20 kBaud • 43V Load Dump Protected • Maximum Continuous Input Voltage of 30V
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MCP2021A/2A
MCP2021A/2A
J2602-2
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PDF
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2021A50E
Abstract: MCP2021A MCP2022A-500 500EMD diode marking 7Ls VREG-03 4x4x09
Text: MCP2021A/2A LIN Transceiver with Voltage Regulator Features Description • The MCP2021A/2A is compliant with: - LIN Bus Specifications Version 1.3, and 2.x. - SAE J2602-2 • Support Baud Rates up to 20 kBaud • 43V Load Dump Protected • Maximum Continuous Input Voltage of 30V
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MCP2021A/2A
MCP2021A/2A
J2602-2
DS22298A-page
2021A50E
MCP2021A
MCP2022A-500
500EMD
diode marking 7Ls
VREG-03
4x4x09
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