ixys dsei 2x30
Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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30-10P
31-10P
ixys dsei 2x30
DSEI IXYS 2x31
IXYS DSEI 2
DSEI 20-01 A
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Untitled
Abstract: No abstract text available
Text: P 1000 A.P 1000 S power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 0, Axial lead diode Standard silicon rectifier diodes P 1000 A.P 1000 S ; = 4
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DSEI2*61-12
Abstract: dsei 2x60
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-10P
DSEI2x61-12P
DSEI2*61-12
dsei 2x60
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dsei 2x60
Abstract: IXYS DSEI 2X61 IXYS DSEI 2 ixys dsei IXYS DSEI 2X
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-10P
dsei 2x60
IXYS DSEI 2X61
IXYS DSEI 2
ixys dsei
IXYS DSEI 2X
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17n100a
Abstract: NC2030 17N100AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
17N100U1
17N100AU1
17n100a
NC2030
17N100AU1
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10N100U1
Abstract: N100A ixgh 1500
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
10N100U1
10N100AU1
10N100U1
N100A
ixgh 1500
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ixgh 1500
Abstract: 17N100U1 17N100AU1 AC motor speed control 17n10
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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N100U1
N100AU1
17N100AU1
17N100U1
ixgh 1500
17N100U1
17N100AU1
AC motor speed control
17n10
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Untitled
Abstract: No abstract text available
Text: PIN Diode based Variable Attenuator 50 - 1000 MHz AT10-0019 AT10-0019 PIN Diode based Variable Attenuator 50 - 1000 MHz Features • • • • • • SOW-16 High Dynamic Range: 42dB Typical Flat Attenuation vs. Frequency High P1dB Compression Operates on a Single +5V Supply:
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AT10-0019
SOW-16,
SOW-16
AT10-0019
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P1000S
Abstract: P1000 P1000J P1000K diode rectifier p 600
Text: P 1000 A.P 1000 S Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes P 1000 A.P 1000 S Forward Current: 10 A Reverse Voltage: 50 to 1200 V
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P-600
P1000S
P1000
P1000J
P1000K
diode rectifier p 600
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Untitled
Abstract: No abstract text available
Text: VRSM VRRM dv/dt cr ITRMS (maximum values for continuous operation) VDRM 195 A SEMIPACK 2 Thyristor / Diode Modules ITAV (sin. 180; Tcase = 85 °C) V V V/µs 900 1300 1500 1700 1900 800 1200 1400 1600 1800 500 1000 1000 1000 1000 SKKT 122 SKKH 122 128 A
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Untitled
Abstract: No abstract text available
Text: RURG80100 November 2013 Data Sheet 80 A, 1000 V, Ultrafast Diode Features • Ultrafast Recovery trr = 200 ns @ IF = 80 A • Max Forward Voltage, VF = 1.9 V (@ TC = 25°C) Description • 1000 V Reverse Voltage and High Reliability The RURG80100 is an ultrafast diode with low forward
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RURG80100
RURG80100
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Diode BYW 56
Abstract: diodes byw
Text: BYW 27-50.BYW 27-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8 9 3 9 9
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diode k6
Abstract: BC POWER MODULE
Text: BY 500-50.BY 500-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,1 Axial lead diode Fast silicon rectifier diodes BY 500-50.BY 500-1000 8 9 2 9 9
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by 550-50 diode
Abstract: No abstract text available
Text: BY 550-50.BY 550-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module -2 Axial lead diode Standard silicon rectifier diodes BY 550-50.BY 550-1000 8 9 3 9 9
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ixys dsei 2x61
Abstract: DSEI 2X61-10B ixys dsei 2*61-10b
Text: Fast Recovery Epitaxial Diodes FRED VRSM V 1000 VRRM DSEI 2x61 IFAVM = 2x60 A VRRM = 1000 V = 35 ns trr miniBLOC, SOT-227 B Type V 1000 DSEI 2x61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
2x61-10B
ixys dsei 2x61
DSEI 2X61-10B
ixys dsei 2*61-10b
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Untitled
Abstract: No abstract text available
Text: SMJ 1000-10A The Communications Edge TM Preliminary Product Information Quad-Diode Mixer Product Features • • • • • Functional Diagram Input IP3 +15 dBm RF Freq 5 - 1000 MHz LO Freq 5 - 1000 MHz IF Freq DC - 1000 MHz LO Drive Level +10 dBm 6 5 4
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000-10A
000-10A-PCB
1-800-WJ1-4401
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RF mixer 433 Mhz
Abstract: No abstract text available
Text: SMJ 1000-13A The Communications Edge TM Preliminary Product Information Quad-Diode Mixer Product Features • • • • • Functional Diagram Input IP3 +19 dBm RF Freq 5 - 1000 MHz LO Freq 5 - 1000 MHz IF Freq DC - 1000 MHz LO Drive Level +13 dBm 6 5 4
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000-13A
000-13A-PCB
1-800-WJ1-4401
RF mixer 433 Mhz
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Untitled
Abstract: No abstract text available
Text: SMJ 1000-17A The Communications Edge TM Preliminary Product Information Quad-Diode Mixer Product Features • • • • • Functional Diagram Input IP3 +21 dBm RF Freq 5 - 1000 MHz LO Freq 5 - 1000 MHz IF Freq DC - 1000 MHz LO Drive Level +17 dBm 6 5 4
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000-17A
000-17A-PCB
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: SMJ 1000-3B The Communications Edge TM Preliminary Product Information Quad-Diode Mixer Product Features • • • • • Functional Diagram Input IP3 +11 dBm RF Freq 500 - 1000 MHz LO Freq 500 - 1000 MHz IF Freq DC - 1000 MHz LO Drive Level +3 dBm 6 5
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1000-3B
1000-3B-PCB
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2
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N100U1
N100AU1
O-247
10N100U1
10N100AU1
4bflb22b
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EA52
Abstract: EA53 Scans-001783 ea531
Text: PHILIPS EA52 MEASURING DIODE for f r e q u e n c i e s up to 1000_Mc/s DIODE DE MESURE pour des frequences Jusqu'a 1000 MHz MESSDIODE für Frequenzen bis 1000 MHz Heating : Indirect by A.C. or D.C. series or parallel supply Chauffage: Indirect par C.A. ou C.C.
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH17N100U1 IXGH17N100AU1 v CES ^C25 V * CE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions v CES v CGR v GES v’ Td =25°C to ^ = 25°C to 150°C; Maximum Ratings 150°C
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OCR Scan
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IXGH17N100U1
IXGH17N100AU1
O-247
4bflb22b
1996IXYS
17N100U1
17N100AU1
0003L4A
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5
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OT-227
2x61-10B
1997IXYS
0003flbfl
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Text: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2
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BAX12
F1000
1N4001
1N4002
1N4003
1N4004
1N4006
1N4007
Diode 1N4007 DO-7 Rectifier Diode
1N40075
BYX/400
1N4007 RECTIFIER DIODE
4007 uf 1200
BAX12
BYW52
BYW53
BYW54
BYW55
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