10N100P
Abstract: IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions
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IXFH10N100P
IXFV10N100P
IXFV10N100PS
300ns
PLUS220
10N100P
10N100P
IXFH10N100P
IXFV10N100P
N CHANNEL MOSFET 10A 1000V
PLUS220SMD
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH10N100P IXFV10N100P IXFV10N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions
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IXFH10N100P
IXFV10N100P
IXFV10N100PS
300ns
PLUS220
10N100P
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diode schottky 1000V 10a
Abstract: SiC MOS APT0502
Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT26M100JCU3
OT-227)
diode schottky 1000V 10a
SiC MOS
APT0502
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Untitled
Abstract: No abstract text available
Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control Switched Mode Power Supplies D Features G S SiC Schottky Diode
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APT26M100JCU3
OT-227)
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PDF
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Untitled
Abstract: No abstract text available
Text: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT22M100JCU3
OT-227)
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mosfet 10a 800v
Abstract: SOT-227 heatsink sic-diode 1000v APT0502 diode schottky 1000V 10a
Text: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT22M100JCU3
OT-227)
mosfet 10a 800v
SOT-227 heatsink
sic-diode 1000v
APT0502
diode schottky 1000V 10a
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PDF
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Untitled
Abstract: No abstract text available
Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT26M100JCU3
OT-227)
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PDF
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TL130
Abstract: SC371-10A 02 MARKING diode 1000V 0.5a
Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features 1.35 ± 0.4 Surface-mount device Low VF + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking
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SC371-10A
TL130
SC371-10A
02 MARKING
diode 1000V 0.5a
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Untitled
Abstract: No abstract text available
Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 1.35 ± 0.4 Surface-mount device Low VF 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking
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SC371-10A
et1000
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SC371-10A
Abstract: TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A
Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 1.35 ± 0.4 Surface-mount device Low VF 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 5.1 Super high speed switching Marking
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SC371-10A
SC371-10A
TL130
SC371
diode 1000V 10a
fast recovery diode 1000v 10A
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PDF
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PT3010 PDF DATASHEET
Abstract: PT3010 PT308
Text: DIODE MODULE PT308 30A/800V/1000V PT3010 OUTLINE DRAWING FEATURES * Isolated Base * 3 Phase Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS φ * Rectified For General Use Maximum Ratings Parameter Repetitive Peak Reverse Voltage *1
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PT308
0A/800V/1000V
PT3010
E187184
10msec
PT308/3010
PT3010 PDF DATASHEET
PT3010
PT308
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PDF
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SOT-227 heatsink
Abstract: APT0502 diode schottky 1000V 10a
Text: APT22M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT22M100JCU2
OT-227)
SOT-227 heatsink
APT0502
diode schottky 1000V 10a
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PDF
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1N4007 operating frequency
Abstract: CHARACTERISTICS DIODE 1N4007 LN4007 diode ln4007 1N4007 RECTIFIER DIODE LN4004 diode DIODE 1N4001 surge current DIODE 1N4007 DIODE 1N4001 characteristics LN4004
Text: SILICON RECTIFIER DIODE ÎA/IOO— 1000V 1N4001~1N4007 FEATURES • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability « 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S \ Voltage Rating type
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1N4001
1N4007
7to27
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007 operating frequency
CHARACTERISTICS DIODE 1N4007
LN4007 diode
ln4007
1N4007 RECTIFIER DIODE
LN4004 diode
DIODE 1N4001
surge current DIODE 1N4007
DIODE 1N4001 characteristics
LN4004
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PDF
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Untitled
Abstract: No abstract text available
Text: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT26M100JCU2
OT-227)
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IXFH20N100
Abstract: IXFH20N100P 20n10 20N100P IXFT20N100P N CHANNEL MOSFET 10A 1000V F20N
Text: PolarTM Power MOSFET HiPerFETTM IXFH20N100P IXFT20N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR
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IXFH20N100P
IXFT20N100P
300ns
O-247
20N100P
04-01-08-B
IXFH20N100
IXFH20N100P
20n10
20N100P
IXFT20N100P
N CHANNEL MOSFET 10A 1000V
F20N
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3sm6
Abstract: DS-049 35M6 3SM4 1N5550 1N5552 1N5553 Diode 1N5554 35M8 3SM8
Text: SEMTECH CORP 5flE » • B M W 1N5550 1N5551 1N5552 1N5553 1N5554 STANDARD RECOVERY AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE 3SM2 3SM4 3SM6 3SM8 3SM0 • Vr = 200 - 1000V » If = 5.0A • trr = 2jaS • Vf = 1.0V unless otherw ise specified
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00Q2b53
1N5550
1N5551
1N5552
1N5553
1N5554
3sm6
DS-049
35M6
3SM4
Diode 1N5554
35M8
3SM8
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Untitled
Abstract: No abstract text available
Text: APT22M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT22M100JCU2
OT-227)
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PDF
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Untitled
Abstract: No abstract text available
Text: APT26M100JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch
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APT26M100JCU2
OT-227)
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PDF
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH20N100P IXFT20N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR
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IXFH20N100P
IXFT20N100P
300ns
O-247
20N100P
04-01-08-B
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bod ixys
Abstract: IXYS IXBOD
Text: Breakover Diodes Applications ● Transient voltage protection High-voltage switches ● Crowbar ● Lasers ● Pulse generators ● i IH IBO V VH VBO H 1999 IXYS All rights reserved H-1 IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V
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00-1000V
035x2mm)
bod ixys
IXYS IXBOD
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IXYS IXBOD
Abstract: lt 747 bod ixys
Text: D IX Y S Breakover Diodes Applications • Transient voltage protection • High-voltage switches • Crowbar • Lasers • Pulse generators o- 1998 IXYS All rights reserved H -1 mmm IXBOD 1 -06.10 1A. X U Single Breakover Diode =600 - 1000V ^AVM ”
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OCR Scan
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035x2m
IXYS IXBOD
lt 747
bod ixys
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PDF
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Untitled
Abstract: No abstract text available
Text: IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V IAVM = 0.9 A A K 600 ±50 700 ±50 800 ±50 900 ±50 1000 ±50 IXBOD 1 -06 IXBOD 1 -07 IXBOD 1 -08 IXBOD 1 -09 IXBOD 1 -10 Symbol Conditions ID TVJ = 125°C; Ratings 20 V = 0,8x VBO
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00-1000V
035x2mm)
material80A;
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diode js
Abstract: DIODE JS.6 IXYS IXBOD
Text: n i • I i1 YA vJL U IXBOD 1 -06.10 Single Breakover Diode > o ffl ±50 ±50 ±50 ±50 =600 -1000V ^AVM ” A Standard V 600 800 900 1000 VB0 Types IXBOD IXBOD IXBOD IXBOD 1 -06 1 -08 1 -09 1 -10 Symbol Test Conditions Ratings Id T w = 25°C; V = 0,8x V B0
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OCR Scan
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-1000V
035x2mm)
diode js
DIODE JS.6
IXYS IXBOD
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PDF
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5AAFT
Abstract: No abstract text available
Text: ERD27ERD77 10A*1000V »±'<9-*y*-K • a « g a E ? y *-K : Outline Drawings FAST RECOVERY DIODE : Features • Glass passivated ch ip H ig h reverse v o lta g e c a p a b ility • 7>9"sY'ffc S tu d m o u n te d : Applications 9 S w itc h in g p o w e r s u p p lie s
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OCR Scan
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ERD27ERD77
I95t/R89)
5AAFT
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PDF
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