diode avalanche DSA 25 8
Abstract: No abstract text available
Text: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM DSI 17 DSAI 17 Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A on stud DSI 17-08A DSI 17-12A on stud 1300 1700 1900 1300
|
Original
|
DO-203
7-08A
7-12A
7-16A
7-18A
diode avalanche DSA 25 8
|
PDF
|
diode avalanche DSA 25 8
Abstract: 17-12A diode avalanche DSA ixys dsi 17-16-A DIODE DSA 18 1712A
Text: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA 17-12A
|
Original
|
DO-203
7-08A
7-12A
7-16A
7-18A
diode avalanche DSA 25 8
17-12A
diode avalanche DSA
ixys dsi
17-16-A
DIODE DSA 18
1712A
|
PDF
|
109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
|
Original
|
M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
|
PDF
|
DSS17-06CR
Abstract: 17-06CR
Text: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 600 600 Type A C ISOPLUS 247TM C DSS 17-06CR A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol
|
Original
|
17-06CR
247TM
DSS17-06CR
DSS17-06CR
17-06CR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V = 45 ns trr Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 600 600 Type A C ISOPLUS 247TM C DSS 17-06CR A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol
|
Original
|
17-06CR
247TM
|
PDF
|
BAP50LX
Abstract: SMD MARKING CODE M 4 Diode
Text: BAP50LX Silicon PIN diode Rev. 01 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance
|
Original
|
BAP50LX
OD882T
sym006
BAP50LX
SMD MARKING CODE M 4 Diode
|
PDF
|
A777
Abstract: sot-23 a777 Q62702-A776 DIODE BAT sot-23 marking code Q62702-A504 Q62702-A775 Q62702-A777 MARKING 54 "Pin Diode"
Text: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777
|
Original
|
Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
OT-23
A777
sot-23 a777
Q62702-A776
DIODE BAT
sot-23 marking code
Q62702-A504
Q62702-A775
Q62702-A777
MARKING 54 "Pin Diode"
|
PDF
|
DIODE BAT 17
Abstract: A777 DIODE BAT Q62702-A777 Q62702-A504 Q62702-A775 Q62702-A776 MARKING 54 "Pin Diode" cu marking code diode Q62702-A77
Text: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777
|
Original
|
Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
OT-23
DIODE BAT 17
A777
DIODE BAT
Q62702-A777
Q62702-A504
Q62702-A775
Q62702-A776
MARKING 54 "Pin Diode"
cu marking code diode
Q62702-A77
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSS 17-06CR A = Anode, C = Cathode * Patent pending Symbol Conditions Maximum Ratings
|
Original
|
17-06CR
247TM
DSS17-06CR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAT 17 . 3 Silicon Schottky Diode For mixer applications in VHF/UHF range For high-speed switching application BAT 17 BAT 17-04 1 3 2 BAT 17-05 1 3 3 VPS05161 EHA07002 1 2 1 2 BAT 17-06 EHA07004 EHA07005 3 1 2 EHA07006 Type Marking Pin Configuration
|
Original
|
VPS05161
EHA07002
EHA07004
EHA07005
EHA07006
OT-23
EHD07107
|
PDF
|
RJS6004TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
|
Original
|
RJS6004TDPP-EJ
R07DS0896EJ0200
PRSS0002ZA-A
O-220FP-2L)
RJS6004TDPP-EJ
|
PDF
|
RJS6005TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
|
Original
|
RJS6005TDPP-EJ
R07DS0900EJ0200
PRSS0002ZA-A
O-220FP-2L)
RJS6005TDPP-EJ
|
PDF
|
DSS17-06CR
Abstract: dss17-06 DC3010
Text: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSS 17-06CR A = Anode, C = Cathode * Patent pending Symbol Conditions Maximum Ratings
|
Original
|
17-06CR
247TM
DSS17-06CR
DSS17-06CR
dss17-06
DC3010
|
PDF
|
top marking c2 sot23
Abstract: Diode SOT-23 marking C2
Text: BAT 17 . Silicon Schottky Diode 3 • For mixer applications in the VHF / UHF range • For high-speed switching applications 2 1 BAT 17 BAT 17-05 BAT 17-04 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT 17-06 3 3 VPS05161 1 2 EHA07006 EHA07004 Type Marking Pin Configuration
|
Original
|
EHA07005
EHA07002
VPS05161
EHA07006
EHA07004
OT-23
EHD07108
top marking c2 sot23
Diode SOT-23 marking C2
|
PDF
|
|
|
smd code marking 777
Abstract: st smd diode marking code BB164 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification File under Discrete Semiconductors, SC01 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION
|
Original
|
M3D049
BB164
BB164
OD323
SCA56
117027/1200/01/pp8
smd code marking 777
st smd diode marking code
BP317
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz
|
Original
|
MSWSE-050-17
0805P)
MSWSE-050-17
STD-J-20C
A17119
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz
|
Original
|
MSWSE-050-17
0805P)
MSWSE-050-17
STD-J-20C
A17119
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz
|
Original
|
MSWSE-050-17
0805P)
MSWSE-050-17
STD-J-20C
A17119
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz
|
Original
|
MSWSE-050-17
0805P)
MSWSE-050-17
STD-J-20C
A17119
|
PDF
|
C75V
Abstract: "marking CODE 13" C7.5 MARKING C75
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BB207 FM variable capacitance double diode Preliminary specification 2003 Nov 17 Philips Semiconductors Preliminary specification FM variable capacitance double diode BB207 PINNING FEATURES • Excellent linearity
|
Original
|
M3D088
BB207
BB207
SCA74
125004/01/pp6
C75V
"marking CODE 13"
C7.5
MARKING C75
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BB153 VHF variable capacitance diode Product specification Supersedes data of 1997 Dec 17 2004 Feb 25 Philips Semiconductors Product specification VHF variable capacitance diode BB153 FEATURES PINNING • Excellent linearity
|
Original
|
BB153
OD323
SC-76)
SCA76
R77/02/pp7
|
PDF
|
automotive ignition
Abstract: CAR IGNITION Electronic car ignition circuit
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX135GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPL FEATURES DESCRIPTION
|
Original
|
M3D473
BYX135GPL
SCA73
613510/02/pp8
automotive ignition
CAR IGNITION
Electronic car ignition circuit
|
PDF
|
Q62702-A777
Abstract: No abstract text available
Text: SIEM ENS Silicon Schottky Diode BAT 17. • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT BAT BAT BAT 17 17-04 17-05 17-06 Ordering Code tape and reel Pin Configuration Marking 1 2 3 Package Q62702-A504 Q62702-A775 Q62702-A776
|
OCR Scan
|
Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
OT-23
EH007I08
Q62702-A777
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS B AT 17. Silicon Schottky Diode • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT BAT BAT BAT 17 17-04 17-05 17-06 Ordering Code Pin Configuration Marking tape, and reel 1 2 3 Q62702-A504 Q62702-A775 Q62702-A776
|
OCR Scan
|
Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
OT-23
535b05
01E03M5
S35b05
0ie03Mb
|
PDF
|
