DH60-14A
Abstract: No abstract text available
Text: DH60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 60 A 230 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DH60-18A
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20110908b
DH60-14A
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Untitled
Abstract: No abstract text available
Text: DH20-18A preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 20 A 300 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DH20-18A
Recti00
60747and
20110527b
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diode 343 18a
Abstract: 18a marking 41-L1 DH60-14A
Text: DH60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 60 A 230 ns Part number DH60-18A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DH60-18A
60747and
20110908b
diode 343 18a
18a marking
41-L1
DH60-14A
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diode 343 18a
Abstract: dh20-18a dh20
Text: DH20-18A preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 20 A 300 ns Part number DH20-18A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DH20-18A
60747and
20110527b
diode 343 18a
dh20-18a
dh20
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DH60-14A
Abstract: No abstract text available
Text: DH60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 60 A 230 ns Part number DH60-18A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DH60-18A
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DH60-14A
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electrical circuit diagram reverse forward move d
Abstract: H24 SMD DIODE
Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.
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BDD20101213
electrical circuit diagram reverse forward move d
H24 SMD DIODE
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K18120G3
Abstract: No abstract text available
Text: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K18120G3
ISL9K18120G3
K18120G3
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K18120G3
Abstract: ISL9K18120G3 AN-7528 TA49414 K1812
Text: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K18120G3
ISL9K18120G3
K18120G3
AN-7528
TA49414
K1812
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Untitled
Abstract: No abstract text available
Text: DH2x60-18A Sonic Fast Recovery Diode = High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number Backside: Isolated Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour
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DH2x60-18A
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DH2x60-18A
Abstract: DH2x61-18A diode MARKING CODE 18A Minibloc m4x8 M4x8 DH2X6
Text: DH2x60-18A tentative V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A tbd ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package:
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DH2x60-18A
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DH2x60-18A
DH2x61-18A
diode MARKING CODE 18A
Minibloc m4x8
M4x8
DH2X6
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Untitled
Abstract: No abstract text available
Text: DH2x61-18A Sonic Fast Recovery Diode = High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number Backside: Isolated 2 1 3 4 Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour
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DH2x61-18A
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C-150
Abstract: IRFI840G IRGIB6B60KD PD944
Text: PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427C
IRGIB6B60KD
O-220
IRFI840G
O-220
C-150
IRFI840G
IRGIB6B60KD
PD944
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Untitled
Abstract: No abstract text available
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
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C-150
Abstract: IRGIB6B60KD
Text: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427D
IRGIB6B60KD
O-220
O-220
C-150
IRGIB6B60KD
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C-150
Abstract: No abstract text available
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
C-150
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DH2x60-18A
Abstract: No abstract text available
Text: DH2x60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A 230 ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DH2x60-18A
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DH2x60-18A
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Untitled
Abstract: No abstract text available
Text: Bulletin I27280 11/06 GB15XF120K IGBT SIXPACK MODULE Features VCES = 1200V • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC =18A • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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I27280
GB15XF120K
E78996
12-Mar-07
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C-150
Abstract: IRGIB6B60KD ANSI PD-94427D
Text: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427D
IRGIB6B60KD
O-220
O-220
C-150
IRGIB6B60KD
ANSI
PD-94427D
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B1370 transistor
Abstract: B1370 b1370, transistor transistor b1370 r b1370 transistor b1370 e B1370 E 400
Text: PD-94427B IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427B
IRGIB6B60KD
O-220
IRFI840G
B1370 transistor
B1370
b1370, transistor
transistor b1370
r b1370 transistor
b1370 e
B1370 E 400
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VCC400V
Abstract: C-150
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
VCC400V
C-150
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Untitled
Abstract: No abstract text available
Text: DH2x60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A 230 ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DH2x60-18A
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Untitled
Abstract: No abstract text available
Text: DH2x61-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs 1800 V 60 A 230 ns Part number DH2x61-18A Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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diode MARKING CODE 18A
Abstract: sot 227b diode fast SOT227B
Text: DH2x61-18A Sonic Fast Recovery Diode VRRM = 1800 V I FAV = 2x t rr = 60 A 230 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DH2x61-18A Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DH2x61-18A
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diode MARKING CODE 18A
sot 227b diode fast
SOT227B
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Untitled
Abstract: No abstract text available
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode sha11 be marked with Cathode Mark and Lot No.
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ESJA53-18A
sha11
ESJA53-f
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